APTGT30H170T3 Full - Bridge VCES = 1700V IC = 30A @ Tc = 80°C ® Trench IGBT Power Module Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control 13 14 19 Q2 22 7 23 8 CR2 26 Q3 11 Features • Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Low stray inductance • High level of integration • Internal thermistor for temperature monitoring 10 Q4 CR4 4 27 3 29 30 31 15 32 16 R1 28 27 26 25 20 19 18 23 22 29 16 30 15 31 14 32 13 2 3 4 7 8 10 11 12 All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 … Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • Easy paralleling due to positive TC of VCEsat • Each leg can be easily paralleled to achieve a phase leg of twice the current capability Absolute maximum ratings Symbol VCES Parameter Collector - Emitter Breakdown Voltage IC Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation RBSOA Reverse Bias Safe Operation Area TC = 25°C Max ratings 1700 45 30 70 ±20 210 Tj = 125°C 120A@1600V TC = 25°C TC = 80°C TC = 25°C Unit V September, 2004 CR3 CR1 A V W These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1-5 APTGT30H170T3 – Rev 0 Q1 18 APTGT30H170T3 Test Conditions Min BVCES ICES Collector - Emitter Breakdown Voltage Zero Gate Voltage Collector Current 1700 VCE(on) Collector Emitter on Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current VGE = 0V, IC = 1.5mA VGE = 0V, VCE = 1700V Tj = 25°C VGE = 15V IC = 30A Tj = 125°C VGE = VCE , IC = 1.5mA VGE = 20V, VCE = 0V Test Conditions VGE = 0V, VCE = 25V f = 1MHz Inductive Switching (25°C) VGE = ±15V VBus = 900V IC = 30A R G = 18Ω Inductive Switching (125°C) VGE = ±15V VBus = 900V IC = 30A R G = 18Ω Min Dynamic Characteristics Symbol Cies Cres Td(on) Tr Characteristic Input Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Td(off) Turn-off Delay Time Tf Td(on) Tr Td(off) Tf Eon Eoff Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy X Turn-off Switching Energy Y Reverse diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM Maximum Reverse Leakage Current VF Diode Forward Voltage Er Reverse Recovery Energy Qrr Reverse Recovery Charge Test Conditions VR=1700V IF = 50A VGE = 0V IF = 50A VR = 900V di/dt =990A/µs IF = 50A VR = 900V di/dt =990A/µs Typ 2500 90 100 70 3 2.4 Typ 1.8 1.9 8 Tj = 125°C 15 Tj = 25°C 18 Tj = 125°C 29 Min Typ 68 4080 Unit V mA V 6.4 600 V nA Max Unit pF ns 80 100 70 750 100 18 19 Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Symbol Characteristic R25 Resistance @ 25°C B 25/85 T25 = 298.16 K R 25 2.0 2.4 5.8 Max 650 Min 1700 Temperature sensor NTC RT = 5.2 Typ ns mJ Max 250 500 2.2 Unit V µA V mJ µC Max September, 2004 Symbol Characteristic Unit kΩ K T: Thermistor temperature 1 1 RT : Thermistor value at T exp B 25 / 85 − T25 T APT website – http://www.advancedpower.com 2-5 APTGT30H170T3 – Rev 0 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics APTGT30H170T3 Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Min IGBT Diode Junction to Case RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink M4 3500 -40 -40 -40 Typ Max 0.6 0.9 Unit °C/W V 150 125 100 4.7 110 °C N.m g Package outline 12 APT website – http://www.advancedpower.com 3-5 APTGT30H170T3 – Rev 0 September, 2004 28 17 1 APTGT30H170T3 Typical Performance Curve Output Characteristics (VGE=15V) Output Characteristics 80 60 70 50 TJ = 125°C VGE=17V 50 40 T J=25°C IC (A) 40 VGE=15V 30 VGE=13V TJ =125°C 30 20 20 V GE=9V 10 10 0 0 0 0.5 1 1.5 2 2.5 VCE (V) 3 3.5 4 0 60 T J=25°C VCE = 900V VGE = 15V RG = 18 Ω TJ = 125°C E (mJ) 40 40 4 5 Eon Eoff 30 20 TJ=125°C 20 Er 10 0 0 5 6 7 8 9 10 0 11 20 40 60 80 100 IC (A) V GE (V) Switching Energy Losses vs Gate Resistance Reverse Safe Operating Area 80 140 VCE = 900V VGE =15V IC = 30A TJ = 125°C 120 Eon 100 IC (A) 60 E (mJ) 3 VCE (V) 60 50 40 Eoff 80 60 V GE=15V T J=125°C RG=18 Ω 40 20 Er 20 0 0 20 40 60 80 100 Gate Resistance (ohms) 0.5 400 800 1200 1600 V CE (V) maximum Effective Transient Thermal Impedance, Junction to Pulse Duration 0.7 0.6 0 120 IGBT 0.9 September, 2004 0 Thermal Impedance (°C/W) 2 Energy losses vs Collector Current Transfert Characteristics 80 IC (A) 1 0.7 0.4 0.3 0.2 0.1 0 0.00001 0.5 0.3 0.1 0.05 Single Pulse 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) APT website – http://www.advancedpower.com 4-5 APTGT30H170T3 – Rev 0 IC (A) 60 APTGT30H170T3 Forward Characteristic of diode 100 40 V CE=900V D=50% RG =18 Ω T J=125°C T C=75°C ZVS 35 30 25 80 I C (A) Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current 45 ZCS 20 15 10 T J=25°C 60 40 T J=125°C 20 hard switching 5 0 0 10 0 20 30 IC (A) 40 50 0 60 0.5 1 1.5 V F (V) 2 2.5 3 Thermal Impedance (°C/W) maximum Effective Transient Thermal Impedance, Junction to Pulse Duration 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 Diode 0.9 0.7 0.5 0.3 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website – http://www.advancedpower.com 5-5 APTGT30H170T3 – Rev 0 September, 2004 rectangular Pulse Duration (Seconds)