140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MS1403 RF AND MICROWAVE TRANSISTORS VHF PORTABLE/MOBILE APPLICATIONS Features • • • • • 175 MHz 7.5 Volts Common Emitter POUT = 1.4 W Min. GP = 7.0 dB Gain DESCRIPTION: The MS1403 is a 7.5 V epitaxial silicon NPN planar transistor designed primarily for VHF communications. It withstands very high VSWR under rated operating conditions. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter VCBO VCER VCES VEBO IC PDISS TJ T STG Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature Value Unit 36 16 36 4.0 0.75 5.0 +200 -65 to +150 V V V V A W °C °C 35 ° C/W Thermal Data RTH(j-c) Junction-Case Thermal Resistance Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. MS1403 ELECTRICAL SPECIFICATIONS (Tcase = 25 ° C) STATIC Symbol BVCES BVCEO BVEBO ICER ICBO hFE Test Conditions IC = 5 mA IC = 25 mA IE = 1 mA VCE =10 V VCB =15 V VCE = 5 V VBE = 0 V IB = 0 mA IC = 0 mA RBE = 80¿ IE = 0 mA IC = 100 mA Min. Value Typ. Max. 36 16 4.0 0.5 1.0 200 40 Units V V V mA mA DYNAMIC Symbol POUT GP COB Test Conditions f = 150 MHz f = 150 MHz f = 1 MHz VCC = 7.5 V VCC = 7.5 V VCB = 7.5 V Min. Value Typ. Max. 1.4 11.5 6.5 Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. Units W dB pF MS1403 PACKAGE MECHANICAL DATA Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.