140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MS1504 RF AND MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS Features • • • • • 160 MHz 13.6 Volts Common Emitter POUT = 30 W Min. GP = 10.0 dB Gain DESCRIPTION: The MS1504 is a 13.6 V Class C epitaxial silicon NPN planar transistor designed primarily for VHF communications. The MS1504 utilizes an emitter ballasted die geometry to withstand severe load mismatch conditions. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter VCBO VCEO VCES VEBO IC PDISS TJ T STG Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature Value Unit 36 18 36 4.0 8.0 70 +200 -65 to +150 V V V V A W °C °C 1.2 ° C/W Thermal Data RTH(j-c) Junction-Case Thermal Resistance Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. MS1504 ELECTRICAL SPECIFICATIONS (Tcase = 25 ° C) STATIC Symbol BVCES BVCEO BVEBO ICBO hFE Test Conditions IC = 15 mA IC = 50 mA IE = 5 mA VCB =15 V VCE = 5 V Min. VBE = 0 mA IB = 0 mA IC = 0 mA IE = 0 mA IC = 250 mA Value Typ. Max. 36 18 4.0 5 200 20 Units V V V mA DYNAMIC Symbol POUT GP COB Test Conditions f = 160 MHz f = 160 MHz f = 1 MHz PIN = 3.0 W PIN = 3.0 W VCB = 15 V Min. VCE = 13.6 V VCE = 13.6 V Value Typ. Max. 30 10 95 IMPEDANCE DATA Freq. ZIN (Ω Ω) ZCL (Ω Ω) 175 MHz 1.0 + j 0.4 2.3 + j 0.1 PIN = 3.0 W VCE = 12.5 V Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. Units W dB pF MS1504 PACKAGE MECHANICAL DATA Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.