MS1453 RF & MICROWAVE TRANSISTORS 800-900 MHz BASESTATION APPLICATIONS Features • • • • • • • 800-900 MHz 24 VOLTS COMMON EMITTER GOLD METALIZATION INTERNAL INPUT MATCHING CLASS AB LINEAR OPERATION POUT = 30 W MIN. WITH 7.5 dB GAIN DESCRIPTION: The MS1453 is a gold metallized epitaxial silicon NPN planar transistor using diffused emitter ballast resistors for high linearity Class AB operation in cellular base station applications. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°°C) Symbol VCBO VCES VEBO IC PDISS TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature Value Unit 50 45 5.0 5.0 43 +200 -65 to +150 V V V A W °C °C 3.0 °C/W Thermal Data RTH(J-C) Thermal Resistance Junction-case MS1453.PDF 12-10-03 Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. MS1453 ELECTRICAL SPECIFICATIONS (Tcase = 25° 25°C) STATIC Symbol BVCBO BVCEO BVEBO ICBO hFE Test Conditions IC = 100 mA IC = 40 mA IE = 10 mA VCB = 24 V VCE = 10 V IE = 0 mA IB = 0 mA IC = 0 mA IE = 0 mA IC = 200 mA Min. Value Typ. Max. 48 25 3.5 --20 ----------- ------2.0 100 Unit V V V mA --- DYNAMIC Symbol Test Conditions Min. Value Typ. Max. Unit POUT f = 960 MHz PIN = 5.3 W VCC = 24 V 30 --- --- W GP f = 960 MHz PIN = 5.3 W VCC = 24 V 7.5 --- --- dB ηC f = 960 MHz PIN = 5.3 W VCC = 24 V 45 50 --- % f = 1 MHz VCB = 24 V --- --- 48 pf COB MS1453.PDF 12-10-03 Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. MS1453 PACKAGE MECHANICAL DATA MS1453.PDF 12-10-03 Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.