140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 SD1420-01 RF AND MICROWAVE TRANSISTORS 800-900 MHz BASE STATION APPLICATIONS Features • • • • • • • 860 – 960 MHz 24 VOLTS COMMON EMITTER GOLD METALLIZATION CLASS A LINEAR OPERATION POUT = 0.9 W MIN. 9.5 dB GAIN DESCRIPTION: The SD1420-01 is a gold metallized epitaxial silicon NPN planar transistor designed for high-linearity Class A operation Cellular Base Station applications. The SD1420-01 is also available in a stud package as the SD1420. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 28 V VEBO Emitter-Base Voltage 3.5 V Device Current .250 A 7 W IC PDISS Power Dissipation TJ Junction Temperature + 200 °C T STG Storage Temperature –55 to +150 °C 20 ° C/W THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. SD1420-01 ELECTRICAL SPECIFICATIONS (Tcase = 25 ° C) STATIC Symbol Test Conditions Value Min. Typ. Max. Units BVCBO IC = 1 mA 40 V BVCEO IC = 1 mA 28 V BVEBO IE = 1 mA 3.5 V ICES VCB = 24 V hFE VCE = 5 V .5 IC = .1 A 20 mA 120 DYNAMIC Symbol Test Conditions Value Min. POUT f = 960 MHz VCE = 24 V ICQ = 200 mA 2.1 GP f = 960 MHz VCE = 24 V ICQ = 125 mA 8.9 COB f = 1 MHz VCB = 28 V Typ. Max. W 9.0 dB 5.0 Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. Units pF SD1420-01 PACKAGE MECHANICAL DATA Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.