Red Enhanced Silicon Photodiode SD 172-11-21-221 PACKAGE DIMENSIONS INCH [mm] PACKAGE DIMENSIONS INCH [mm] .169 [4.29] .157 [3.99] 45° .090 [2.29] 3X Ø.018 [0.46] 1 Ø.264 [6.70] Ø.256 [6.50] Ø.330 [8.38] Ø.320 [8.13] Ø.200 [5.08] PIN CIRCLE 79° VIEWING ANGLE 2 .010 [0.25] MAX GLASS ABOVE CAP TOP EDGE 3 Ø .362 [9.19] Ø .357 [9.07] 3X .500 [12.7] MIN 1 ANODE CHIP DIMENSIONS [mm] CHIP DIMENSIONS INCH INCH [mm] 2 CASE GROUND .201 [5.11] 3 CATHODE SCHEMATIC .142 [3.61] TO-8 PACKAGE .126 [3.20] ACTIVE AREA TO-5 PACKAGE .185 [4.70] ACTIVE AREA DESCRIPTION APPLICATIONS The SD 172-11-21-221 is a general purpose silicon PIN photodiode, red enhanced, packaged in a leaded hermetic TO-8 metal package. • Instrumentation • Industrial • Medical SPECTRAL RESPONSE ABSOLUTE MAXIMUM RATING (TA)= 23°C UNLESS OTHERWISE NOTED +125 +240 °C 0.50 0.40 0.30 0.20 0.10 Wavelength (nm) ELECTRO-OPTICAL CHARACTERISTICS RATING (TA)= 23°C UNLESS OTHERWISE NOTED SYMBOL ID RSH CHARACTERISTIC Dark Current Shunt Resistance CJ Junction Capacitance lrange Spectral Application Range R Responsivity VBR NEP Breakdown Voltage Noise Equivalent Power tr Response Time** TEST CONDITIONS VR = 5V VR = 10 mV VR = 0V, f = 1 MHz VR = 10V, f = 1 MHz Spot Scan l= 633nm, VR = 0 V l= 900nm, VR = 0 V I = 10 μA VR = 5V @ l=950nm RL = 50 Ω,VR = 0 V RL = 50 Ω,VR = 10 V MIN TYP 5.0 MAX 20.0 100 255 53 350 0.32 0.50 pF 1100 0.36 0.55 50 7.0X10-14 190 13 UNITS nA MW nm A/W V W/ √ Hz nS **Response time of 10% to 90% is specified at 660nm wavelength light. Information in this technical datasheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are subject to change without notice. Advanced Photonix Inc. 1240 Avenida Acaso, Camarillo CA 93012 • Phone (805) 987-0146 • Fax (805) 484-9935 • www.advancedphotonix.com 1150 1100 1050 950 1000 250 900 0.00 * 1/16 inch from case for 3 seconds max. 850 Soldering Temperature* -40 °C °C 800 TS +150 750 Operating Temperature -55 0.60 700 TO V 650 Storage Temperature 75 600 TSTG 0.70 UNITS 550 Reverse Voltage MAX 500 VBR MIN 300 PARAMETER Responsivity (A/W) SYMBOL 450 Low noise Red enhanced High shunt resistance High response 400 • • • • 350 FEATURES