ADVANCEDPHOTONIX SD100-11-21-221

Red Enhanced Silicon Photodiode
SD 100-11-21-221
PACKAGE
INCH
[mm]
PACKAGEDIMENSIONS
DIMENSIONS INCH
[mm]
.169 [4.29]
.157 [3.99]
45°
.090 [2.29]
3X Ø.018 [0.46]
1
Ø.264 [6.70]
Ø.256 [6.50]
Ø.330 [8.38]
Ø.320 [8.13]
Ø.200 [5.08]
PIN CIRCLE
90°
VIEWING
ANGLE
.010 [0.25] MAX
GLASS ABOVE CAP
TOP EDGE
2
3
Ø .362 [9.19]
Ø .357 [9.07]
3X .500 [12.7] MIN
1 ANODE
CHIP
DIMENSIONS INCH
INCH [mm]
CHIP
DIMENSIONS
[mm]
2 CASE GROUND
.118 [3.00]
SQUARE
3 CATHODE
SCHEMATIC
Ø.100 [Ø2.54]
ACTIVE AREA
TO-5 PACKAGE
TO-5 PACKAGE
DESCRIPTION
APPLICATIONS
The SD 100-11-21-221 is a general purpose silicon
PIN photodiode, red enhanced, packaged in a leaded
hermetic TO-5 metal package.
• Instrumentation
• Industrial
• Medical
SPECTRAL RESPONSE
ABSOLUTE MAXIMUM RATING (TA)= 23°C UNLESS OTHERWISE NOTED
+125
+240
°C
0.50
0.40
0.30
0.20
0.10
Wavelength (nm)
ELECTRO-OPTICAL CHARACTERISTICS RATING (TA)= 23°C UNLESS OTHERWISE NOTED
SYMBOL
ID
RSH
CHARACTERISTIC
Dark Current
Shunt Resistance
CJ
Junction Capacitance
lrange
Spectral Application Range
R
Responsivity
VBR
NEP
Breakdown Voltage
Noise Equivalent Power
tr
Response Time**
TEST CONDITIONS
VR = 5V
VR = 10 mV
VR = 0V, f = 1 MHz
VR = 10V, f = 1 MHz
Spot Scan
l= 633nm, VR = 0 V
l= 900nm, VR = 0 V
I = 10 μA
VR = 5V @ l=950nm
RL = 50 Ω,VR = 0 V
RL = 50 Ω,VR = 10 V
MIN
TYP
1.6
MAX
6.4
300
87
18
350
0.32
0.50
pF
1100
0.36
0.55
50
4.0X10-14
190
13
UNITS
nA
MW
nm
A/W
V
W/ √ Hz
nS
**Response time of 10% to 90% is specified at 660nm wavelength light.
Information in this technical datasheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are
subject to change without notice.
Advanced Photonix Inc. 1240 Avenida Acaso, Camarillo CA 93012 • Phone (805) 987-0146 • Fax (805) 484-9935 • www.advancedphotonix.com
1150
1100
1050
950
1000
250
900
0.00
* 1/16 inch from case for 3 seconds max.
850
Soldering Temperature*
-40
°C
°C
800
TS
+150
750
Operating Temperature
-55
0.60
700
TO
V
650
Storage Temperature
75
600
TSTG
0.70
UNITS
550
Reverse Voltage
MAX
500
VBR
MIN
300
PARAMETER
Responsivity (A/W)
SYMBOL
450
Low noise
Red enhanced
High shunt resistance
High response
400
•
•
•
•
350
FEATURES