ADVANCEDPHOTONIX SD630-70-72-500

Non-Cooled Large Area Red Silicon Avalanche Photodiode
SD 630-70-72-500
Advanced Photonix, Inc.
PACKAGE DIMENSIONS INCHES
Connector center pin cathode
Connector outer jacket anode
SHV PACKAGE
FEATURES
DESCRIPTION
APPLICATIONS
• Low noise
• High gain
• High Speed
The SD 630-70-72-500 is a non-cooled large area
red enhanced silicon avalanche photodiode (APD)
with high gain and low noise in a SHV package.
• Instrumentation
• Medical
°C
+240
°C
* 1/16 inch from case for 3 seconds max.
80
60
60
QE
40
R
40
20
20
0
1050
950
1000
Wavelength (nm)
900
850
800
750
250
0
700
Soldering Temperature*
+40
80
650
TS
-55
°C
600
Operating Temperature
+70
100
550
TO
-55
100
500
Storage Temperature
250
120
450
TSTG
UNITS
400
Gain
MAX
350
M
MIN
300
PARAMETER
Responsivity (A/W)
SYMBOL
120
Quantum Efficiency (%)
SPECTRAL RESPONSE M = 200
ABSOLUTE MAXIMUM RATING (TA)= 23°C UNLESS OTHERWISE NOTED
ELECTRO-OPTICAL CHARACTERISTICS RATING (TA)= 23°C and Gain of 200 UNLESS OTHERWISE NOTED
SYMBOL
ID
CJ
IN
lrange
R
Vop
TVBR
tr
CHARACTERISTIC
TEST CONDITIONS
Dark Current
Junction Capacitance
f = 1 MHz
Noise Current Spectral Density f = 100 kHz
Spectral Application Range
Spot Scan
l= 750 nm, VR = 0 V
Responsivity
Operating voltage
Temp. Coeff. Breakdown voltage
Constant Gain = 200
RL = 50 Ω, l= 675nm
Response Time*
MIN
TYP
MAX
UNITS
280
130
2.5
600
nA
pF
pA/√Hz
nm
A/W
V
V
nS
300
5.5
1000
100
1700
2000
2
15
22
*Response time of 10% to 90% is specified at 675nm wavelength light.
Each part is supplied with gain bias voltages and dark current data.
Information in this technical datasheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications and
output data subject to change without notice. © 2007 Advanced Photonix, Inc. All rights reserved.
Advanced Photonix Inc. 1240 Avenida Acaso, Camarillo CA 93012 • Phone (805) 987-0146 • Fax (805) 484-9935 • www.advancedphotonix.com
REV 7/9/07