Non-Cooled Large Area Red Silicon Avalanche Photodiode SD 630-70-72-500 Advanced Photonix, Inc. PACKAGE DIMENSIONS INCHES Connector center pin cathode Connector outer jacket anode SHV PACKAGE FEATURES DESCRIPTION APPLICATIONS • Low noise • High gain • High Speed The SD 630-70-72-500 is a non-cooled large area red enhanced silicon avalanche photodiode (APD) with high gain and low noise in a SHV package. • Instrumentation • Medical °C +240 °C * 1/16 inch from case for 3 seconds max. 80 60 60 QE 40 R 40 20 20 0 1050 950 1000 Wavelength (nm) 900 850 800 750 250 0 700 Soldering Temperature* +40 80 650 TS -55 °C 600 Operating Temperature +70 100 550 TO -55 100 500 Storage Temperature 250 120 450 TSTG UNITS 400 Gain MAX 350 M MIN 300 PARAMETER Responsivity (A/W) SYMBOL 120 Quantum Efficiency (%) SPECTRAL RESPONSE M = 200 ABSOLUTE MAXIMUM RATING (TA)= 23°C UNLESS OTHERWISE NOTED ELECTRO-OPTICAL CHARACTERISTICS RATING (TA)= 23°C and Gain of 200 UNLESS OTHERWISE NOTED SYMBOL ID CJ IN lrange R Vop TVBR tr CHARACTERISTIC TEST CONDITIONS Dark Current Junction Capacitance f = 1 MHz Noise Current Spectral Density f = 100 kHz Spectral Application Range Spot Scan l= 750 nm, VR = 0 V Responsivity Operating voltage Temp. Coeff. Breakdown voltage Constant Gain = 200 RL = 50 Ω, l= 675nm Response Time* MIN TYP MAX UNITS 280 130 2.5 600 nA pF pA/√Hz nm A/W V V nS 300 5.5 1000 100 1700 2000 2 15 22 *Response time of 10% to 90% is specified at 675nm wavelength light. Each part is supplied with gain bias voltages and dark current data. Information in this technical datasheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications and output data subject to change without notice. © 2007 Advanced Photonix, Inc. All rights reserved. Advanced Photonix Inc. 1240 Avenida Acaso, Camarillo CA 93012 • Phone (805) 987-0146 • Fax (805) 484-9935 • www.advancedphotonix.com REV 7/9/07