InGaAs Photodetectors SD 004-11-41-211 PACKAGE DIMENSIONS INCH [mm] Ø 0.210 [5.33] 0.029 [0.73] 0.065 [1.66] 4X Ø 0.019 [0.48] Ø 0.055 [1.40] 1 Ø 0.184 [4.67] 4 2 3 CHIP 0.145 [3.69] BOTTOM VIEW 0.50 [12.7] CHIP DIMENSIONS INCH [mm] 3 ANODE 4 CASE GROUND 0.016 [0.40] 1 CATHODE 2 NOT USED 0.016 [0.40] SCHEMATIC TO-46 PACKAGE Ø .0079 [.200] ACTIVE AREA FEATURES DESCRIPTION APPLICATIONS • Low noise • Low dark current • High response The SD 004-11-41-211 is a high sensitivity low noise characteristics InGaAs photodiode packaged in a leaded hermetic TO-46 metal package. • Communications • Industrial • Medical SPECTRAL RESPONSE ABSOLUTE MAXIMUM RATING (TA)= 23°C UNLESS OTHERWISE NOTED VBR PARAMETER MIN Reverse Voltage MAX 75 1.2 UNITS V TSTG Storage Temperature -55 +100 TO Operating Temperature -40 +85 °C °C TS Soldering Temperature* +260 °C * 1/16 inch from case for 3 seconds max. 1 Responsivity (A/W) SYMBOL 0.8 0.6 0.4 0.2 0 800 900 1000 1100 1200 1300 1400 1500 1600 1700 Wavelength (nM) ELECTRO-OPTICAL CHARACTERISTICS RATING (TA)= 23°C UNLESS OTHERWISE NOTED SYMBOL ID RSH CJ lrange R VBR NEP tr CHARACTERISTIC Dark Current Shunt Resistance Junction Capacitance Spectral Application Range Responsivity Breakdown Voltage Noise Equivalent Power Response Time** TEST CONDITIONS VR = 5V VR = 10 mV VR = 5V, f = 1 MHz Spot Scan l= 1310nm, VR = 5V I = 1μA VR = 5V @ l=1310nm RL = 50 Ω,VR = 5V MIN 400 800 0.83 TYP 0.8 1000 0.75 MAX 1.0 0.95 1700 0.92 18 1.43X10-14 0.18 UNITS nA MW pF nm A/W V W/ √ Hz nS **Response time of 10% to 90% is specified at 1310nm wavelength light. Information in this technical datasheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are subject to change without notice. Advanced Photonix Inc. 1240 Avenida Acaso, Camarillo CA 93012 • Phone (805) 987-0146 • Fax (805) 484-9935 • www.advancedphotonix.com REV 1/16/07