MICROSEMI 1N5711-1

TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01844
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
SCHOTTKY BARRIER
DIODES
– LOW REVERSE LEAKAGE CHARACTERISTICS
– METALLURGICALLY BONDED
Qualified per MIL-PRF-19500/444
DEVICES
LEVELS
1N5711-1
1N5712-1
1N6857-1
1N6858-1
*DSB2810
*DSB5712
*1N5711
JAN
JANTX
JANTXV
* These devices are only available as Commercial Level Product.
MAXIMUM RATING AT 25°C
Operating Temperature:
-65°C to +150°C
Storage Temperature:
-65°C to +150°C
Operating Current:
5711 types
2810, 5712 & 6858 types
6857 type
Derating:
all types:
*COMMERCIAL
:33mA dc @ TL = +130°C, L = 3/8”
:75mA dc @ TL = +110°C, L = 3/8”
:75mA dc @ TL = +70°C, L = 3/8”
Derate to 0 (zero) mA @ +150°C
ELECTRICAL CHARACTERISTICS (TA = 25°C, unless otherwise specified)
TYPE
NUMBER
MINIMUM
BEAKDOWN
VOLTAAGE
MAXIMUM
FORWARD
VOLTAGE
MAXIMUM
FORWARD
VOLTAGE
MAXIMUM REVERSE
LEAKAGE CURRENT
VBR @ 10μA
VF @ 1mA
VF @ IF
IR @ VR
MAXIMUM
CAPACITANCE @
VR = 0 VOLTS
f = 1.0MHz
ESDS
CLASS
CT
VOLTS
VOLTS
MILLIAMPS
nA
VOLTS
PICO FARADS
DSB2810
20
0.41
1.0 @ 35
100
15
2.0
1
1N5711, -1
70
0.41
1.0 @ 15
200
50
2.0
1
DSB5712
20
0.41
1.0 @ 35
150
16
2.0
1
1N5712-1
20
0.41
1.0 @ 35
150
16
2.0
1
1N6857-1
20
0.35
0.75 @ 35
150
16
4.5
2
1N6858-1
70
0.36
0.65 @ 15
200
50
4.5
2
LDS-0040 Rev. 2 (101097)
DO-35
Page 1 of 3
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01844
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
GRAPHS
FIGURE 1
FIGURE 2
I – V Curve Showing Typical Forward Voltage Variation with
Temperature for the DSB5712 and DSB2810 Schottky Diodes.
FIGURE 3
I – V Curve Showing Typical Forward Voltage Variation with
Temperature for Schottky Diode 1N5711.
DSB5712 and DSB2810 Typical Variation of Reverse
Current (IR) vs. Reverse Voltage (VR) at Various Temperatures
FIGURE 4
1N5711 Typical; Variation of Reverse Current (IR); vs.
ReverseVoltage (VR) at Various Temperatures.
FIGURE 5
Typical Dynamic
Resistance (RD) vs. Forward Current
Current (IF)
LDS-0040 Rev. 2 (101097)
Page 2 of 3
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01844
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
PACKAGE DIMENSIONS
NOTE:
1. Dimensions are in inches. Millimeters are given for general
information only.
2. Dimensions BL and LD include all components of the diode
periphery except the sections of the leads over which the diameter is
controlled.
3. Dimension BD shall be measured at the largest diameter.
4. In accordance with ASME Y14.5M, diameters are equivalent to Φx
symbology.
5. Effective Minority Carrier Lifetime (τ) is 100 Pico Seconds
Symbol
BD
BL
LD
LL
Dimensions
Inches
Millimeters
Min
Max
Min
Max
.068
.076
1.73
1.93
.125
.170
3.18
4.32
.014
.022
0.36
0.56
1.000 1.500 25.40 38.10
Notes
2, 3
2
FIGURE 1 Physical dimensions, (DO-35)
1N5711-1, 1N5712-1, 1N6857-1, and 1N6858-1
DESIGN DATA
Case: Hermetically sealed glass case per MIL-PRF-19500/444 and /445 DO-35 outline.
Lead Material: Copper clad steel.
Lead Finish: Tin / Lead
Thermal Resistance: (RθJEC): 250°C/W maximum at L = .375 inch
Thermal Impedance (ZθJX): (ZθJX): 40°C/W maximum.
Polarity: Cathode end is banded.
Mounting Position: Any.
LDS-0040 Rev. 2 (101097)
Page 3 of 3