MICROSEMI JAN1N6857-1

1N5711-1, 1N5712-1, 1N6857-1, and
1N6858-1; DSB2810 and DSB5712
Qualified Levels:
JAN, JANTX, and
JANTXV
Schottky Barrier Diode
Available on
commercial
versions
Qualified per MIL-PRF-19500/444
DESCRIPTION
This Schottky barrier diode is metallurgically bonded and offers military grade qualifications
for high-reliability applications on “1N” prefixed numbers. This small diode is hermetically
sealed and bonded into a DO-35 glass package.
Important: For the latest information, visit our website http://www.microsemi.com.
DO-35 (DO-204AH)
Package
FEATURES
•
JEDEC registered 1N5711-1, 1N5712-1, 1N6857-1, and 1N6858-1 numbers.
•
Metallurgically bonded.
•
JAN, JANTX, JANTXV and commercial qualifications also available per MIL-PRF-19500/444 on
“1N” numbers only.
(See Part Nomenclature for all available options).
•
Also available in:
UB package
(3-pin surface mount)
1N5711UB, 1N5712UB
(B, CC, CA)
RoHS compliant versions available (commercial grade only).
DO-213AA package
(surface mount)
1N5711UR-1, 1N5712UR-1,
1N6857UR-1, and
1N6858UR-1
APPLICATIONS / BENEFITS
•
Low reverse leakage characteristics.
•
Small size for high density mounting using flexible thru-hole leads (see package illustration).
•
ESD sensitive to Class 1.
MAXIMUM RATINGS @ 25 ºC unless otherwise stated
Parameters/Test Conditions
Junction and Storage Temperature
Thermal Resistance, Junction-to-Lead
@ lead length = 0.375 inch (9.52 mm) from body
Average Rectified Output Current:
Symbol
TJ and TSTG
R ӨJL
Value
-65 to +150
250
Unit
ºC
ºC/W
IO
33
75
150
260
mA
(1)
1N5711
(2)
DSB2810, DSB5712, 1N5712 & 1N6858
(3)
1N6857
Solder Temperature @ 10 s
NOTES: 1. At T L = +130°C and L = 0.375 inch, derate I O to 0 at +150°C.
2. At T L = +110°C and L = 0.375 inch, derate I O to 0 at +150°C.
3. At T L = +70°C and L = 0.375 inch, derate I O to 0 at +150°C.
o
C
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
T4-LDS-0040, Rev. 4 (6/4/13)
©2013 Microsemi Corporation
Page 1 of 7
1N5711-1, 1N5712-1, 1N6857-1, and
1N6858-1; DSB2810 and DSB5712
MECHANICAL and PACKAGING
•
•
•
•
•
•
•
CASE: Hermetically sealed glass package.
TERMINALS: Tin/lead plated or RoHS compliant matte-tin (on commercial grade only) over copper clad steel. Solderable per
MIL-STD-750, method 2026.
POLARITY: Cathode indicated by band.
MARKING: Part number.
TAPE & REEL option: Standard per EIA-296. Consult factory for quantities.
WEIGHT: Approximately 0.2 grams.
See Package Dimensions on last page.
PART NOMENCLATURE
JAN
1N5711
-1
(e3)
Reliability Level
JAN = JAN level
JANTX = JANTX level
JANTXV = JANTXV level
CDS (reference JANS)*
Blank = Commercial grade
RoHS Compliance
e3 = RoHS compliant (on
commercial grade only)
Blank = non-RoHS compliant
Metallurgically Bonded
*Available only on 1N5711-1
JEDEC type number
(see Electrical Characteristics
table)
DSB
2810
(e3)
Diode Schottky Barrier
RoHS Compliance
e3 = RoHS compliant
Blank = non-RoHS compliant
Series number
(see Electrical Characteristics
table)
SYMBOLS & DEFINITIONS
Definition
Symbol
C
f
IR
IO
t rr
V (BR)
Capacitance: The capacitance in pF at a frequency of 1 MHz and specified voltage.
frequency
Reverse Current: The dc current flowing from the external circuit into the cathode terminal at the specified voltage V R.
Average Rectified Output Current: The Output Current averaged over a full cycle with a 50 Hz or 60 Hz sine-wave
input and a 180 degree conduction angle.
Reverse Recovery Time: The time interval between the instant the current passes through zero when changing from
the forward direction to the reverse direction and a specified decay point after a peak reverse current occurs.
Breakdown Voltage: A voltage in the breakdown region.
VF
Forward Voltage: A positive dc anode-cathode voltage the device will exhibit at a specified forward current.
VR
Reverse Voltage: A positive dc cathode-anode voltage below the breakdown region.
Working Peak Reverse Voltage: The peak voltage excluding all transient voltages (ref JESD282-B). Also sometimes
known historically as PIV.
V RWM
T4-LDS-0040, Rev. 4 (6/4/13)
©2013 Microsemi Corporation
Page 2 of 7
1N5711-1, 1N5712-1, 1N6857-1, and
1N6858-1; DSB2810 and DSB5712
ELECTRICAL CHARACTERISTICS @ 25 ºC unless otherwise noted
TYPE
NUMBER
1N5711-1
1N5712-1
1N6857-1
1N6858-1
DSB2810
DSB5712
MINIMUM
BREAKDOWN
VOLTAGE
MAXIMUM
FORWARD
VOLTAGE
MAXIMUM
FORWARD
VOLTAGE
WORKING
PEAK
REVERSE
VOLTAGE
V (BR) @ 10 µA
Volts
70
20
20
70
20
20
V F @ 1 mA
Volts
0.41
0.41
0.35
0.36
0.41
0.41
VF @ IF
V @ mA
1.0 @ 15
1.0 @ 35
0.75 @ 35
0.65 @ 15
1.0 @ 35
1.0 @ 35
V RWM
V (pk)
50
16
16
50
16
16
T4-LDS-0040, Rev. 4 (6/4/13)
©2013 Microsemi Corporation
MAXIMUM
REVERSE
LEAKAGE
CURRENT
nA
200
150
150
200
100
150
IR @ VR
Volts
50
16
16
50
15
16
MAXIMUM
CAPACITANCE
@ VR = 0
VOLTS
f = 1.0 MHz
C
pF
2.0
2.0
4.5
4.5
2.0
2.0
Page 3 of 7
1N5711-1, 1N5712-1, 1N6857-1, and
1N6858-1; DSB2810 and DSB5712
IF – Forward Current (mA)
GRAPHS
V F – Forward Voltage (V)
IR – Reverse Current (nA)
FIGURE 1
I-V Curve showing typical Forward Voltage Variation
Temperature for the 1N5712-1, DSB5712 and DSB2810 Schottky Diodes
V R – Reverse Voltage (V) (PULSED)
FIGURE 2
1N5712-1, DSB5712 and DSB2810 Typical variation of Reverse
Current (I R ) vs Reverse Voltage (V R ) at Various Temperatures
T4-LDS-0040, Rev. 4 (6/4/13)
©2013 Microsemi Corporation
Page 4 of 7
1N5711-1, 1N5712-1, 1N6857-1, and
1N6858-1; DSB2810 and DSB5712
IF – Forward Current (mA)
GRAPHS
V F – Forward Voltage (V)
IR – Reverse Current (nA)
FIGURE 3
I – V curve showing typical Forward Voltage Variation
With Temperature Schottky Diode 1N5711
V R – Reverse Voltage (V) (PULSED)
FIGURE 4
1N5711 Typical Variation of Reverse Current (I R ) vs Reverse Voltage (V R )
at Various Temperatures
T4-LDS-0040, Rev. 4 (6/4/13)
©2013 Microsemi Corporation
Page 5 of 7
1N5711-1, 1N5712-1, 1N6857-1, and
1N6858-1; DSB2810 and DSB5712
RD – Dynamic Resistance (Ohms)
GRAPHS
I F – Forward Current (mA) (PULSED)
FIGURE 5
Typical Dynamic Resistance (R D ) vs Forward Current (I F )
T4-LDS-0040, Rev. 4 (6/4/13)
©2013 Microsemi Corporation
Page 6 of 7
1N5711-1, 1N5712-1, 1N6857-1, and
1N6858-1; DSB2810 and DSB5712
PACKAGE DIMENSIONS
NOTES:
1. Dimensions are in inches. Millimeters are given for information only.
2. Dimensions BL and LD includes all components of the diode
periphery expect the section of the leads over which the diameter is
controlled.
3. Dimension BD shall be measured at the largest diameter.
4. In accordance with ASME Y1.4M, diameters are equivalents to φx
symbology.
T4-LDS-0040, Rev. 4 (6/4/13)
©2013 Microsemi Corporation
Symbol
BD
BL
LD
LL
Dimensions
Inches
Millimeters
Min
Max
Min
Max
0.068 0.076
1.73
1.93
0.125 0.170
3.18
4.32
0.014 0.022
0.36
0.56
1.000 1.500 25.40 38.10
Notes
2,3
2
Page 7 of 7