AAT8401 20V P-Channel Power MOSFET General Description Features The AAT8401 is a low threshold MOSFET designed for the battery, cell phone, and PDA markets. Using AnalogicTech™’s ultra high density proprietary TrenchDMOS™ technology, this product demonstrates high power handling and small size. • • • Applications SC59 Package Battery Packs Cellular & Cordless Telephones Battery-powered portable equipment Top View D 3 1 G Absolute Maximum Ratings Symbol VDS VGS 2 S (TA=25°C unless otherwise noted) Description Value Drain-Source Voltage Gate-Source Voltage TA = 25°C TA = 70°C ID Continuous Drain Current @ TJ=150°C IDM IS Pulsed Drain Current 2 Continuous Source Current (Source-Drain Diode) PD Maximum Power Dissipation TJ, TSTG Preliminary Information • • • VDS(MAX) = -20V ID(MAX) 1 = -2.4A @ 25°C Low RDS(ON): • 100 mΩ @ VGS = -4.5V • 175 mΩ @ VGS = -2.5V 1 1 TA = 25°C TA = 70°C 1 Operating Junction and Storage Temperature Range Units -20 ±12 ±2.4 ±2.0 ±9 -0.9 1.0 0.6 -55 to 150 °C Value Units 145 125 50 °C/W °C/W °C/W V A W Thermal Characteristics Symbol RθJA RθJA2 RθJF 8401.2003.06.0.61 Description Typical Junction-to-Ambient steady state 1 Maximum Junction-to-Ambient t<5 seconds Typical Junction-to-Foot 1 1 1 AAT8401 20V P-Channel Power MOSFET Electrical Characteristics Symbol (TJ=25°C unless otherwise noted) Description DC Characteristics BVDSS Drain-Source Breakdown Voltage RDS(ON) Drain-Source ON-Resistance ID(ON) VGS(th) IGSS On-State Drain Current 2 Gate Threshold Voltage Gate-Body Leakage Current IDSS 2 Drain Source Leakage Current gfs Forward Transconductance 2 Dynamic Characteristics 3 QG Total Gate Charge QGS Gate-Source Charge QGD Gate-Drain Charge tD(ON) Turn-ON Delay tR Turn-ON Rise Time tD(OFF) Turn-OFF Delay tF Turn-OFF Fall Time Source-Drain Diode Characteristics VSD Source-Drain Forward Voltage IS Continuous Diode Current 1 Conditions Min VGS=0V, ID=-250µA VGS=-4.5V, ID=-2.4A VGS=-2.5V, ID=-1.8A VGS=-4.5V, VDS=-5V (Pulsed) VGS=VDS, ID=-250µA VGS=±12V, VDS=0V VGS=0V, VDS=-20V VGS=0V, VDS=-16V, TJ=70°C 3 VDS=-5V, ID=-2.4A -20 VDS=-15V, VDS=-15V, VDS=-15V, VDS=-15V, VDS=-15V, VDS=-15V, VDS=-15V, 2 RD=5.6Ω, RD=5.6Ω, RD=5.6Ω, RD=5.6Ω, RD=5.6Ω, RD=5.6Ω, RD=5.6Ω, VGS=0, IS=-2.4A VGS=-4.5V VGS=-4.5V VGS=-4.5V VGS=-4.5V, VGS=-4.5V, VGS=-4.5V, VGS=-4.5V, Typ Max V 88 146 100 175 -9 -0.6 ±100 -1 -5 4 RG=6Ω RG=6Ω RG=6Ω RG=6Ω Units mΩ A V nA µA S 4 0.6 1.4 6.5 13 15 20 nC ns -1.3 -0.9 V A Note 1: Based on thermal dissipation from junction to ambient while mounted on a 1" x 1" PCB with optimized layout. A 5 second pulse on a 1" x 1" PCB approximates testing a device mounted on a large multi-layer PCB as in most applications. RθJF + RθFA = RθJA where the foot thermal reference is defined as the normal solder mounting surface of the device's leads. RθJF is guaranteed by design, however RθCA is determined by the PCB design. Actual maximum continuous current is limited by the application's design. Note 2: Pulse test: Pulse Width = 300 µs Note 3: Guaranteed by design. Not subject to production testing. 2 8401.2003.06.0.61 AAT8401 20V P-Channel Power MOSFET Typical Characteristics Transfer Characteristics Output Characteristics 9 4V 5V 8 4.5V 7 VD = VG 8 3.5V 2.5V 25°C 6 ID (A) 5 4 3 5 4 2V 3 1.5V 1 2 2 1 0 0 0 0 1 2 1 2 5 4 VGS (V) On-Resistance vs. Drain Current On-Resistance vs. Gate to Source Voltage 300 300 ID = 2.7A 250 200 RDS(ON) (mΩ) 250 RDS(ON) (mΩ Ω) 3 3 VDS (V) VGS = 2.5V 150 100 VGS = 4.5V 50 200 150 100 50 0 0 0 2 4 6 0 8 1 2 On-Resistance vs. Junction Temperature 1.4 5 0.4 VGS = 4.5V ID = 2.7A 1.2 1.0 0.8 0.6 -50 4 Threshold Voltage VGS(th) Variance (V) 1.6 3 VGS (V) ID (A) Normalized RDS(ON) 125°C -55°C 7 6 IDS (A) 9 3V ID = 250µA 0.3 0.2 0.1 0.0 -0.1 -0.2 -25 0 25 50 TJ (°C) 8401.2003.06.0.61 75 100 125 150 -50 -25 0 25 50 75 100 125 150 TJ (°C) 3 AAT8401 20V P-Channel Power MOSFET Typical Characteristics Gate Charge 5 10 VD = 15V ID = 2.7A 4 TJ = 150°C 3 IS (A) VGS (V) Source-Drain Diode Forward Voltage 2 1 TJ = 25°C 1 0 0 1 2 3 4 0.1 5 0 0.2 0.4 QG, Charge (nC) 0.6 0.8 1 1.2 VSD (V) Capacitance Single Pulse Power, Junction to Ambient 30 750 Ciss Power (W) Capacitance (pF) 25 600 450 300 Coss Crss 20 15 10 150 5 0 0.001 0 0 -5 -10 -15 -20 0.01 0.1 1 10 100 1000 Time (s) VDS (V) Normalized Effective Transient Thermal Impedance Transient Thermal Response, Junction to Ambient 10 1 0.1 0.2 0.5 0.1 Single Pulse .05 0.01 0.0001 0.001 .02 0.01 0.1 1 10 100 1000 Time (s) 4 8401.2003.06.0.61 AAT8401 20V P-Channel Power MOSFET Ordering Information Package Marking1 Part Number (Tape and Reel) SC59 IGXYY AAT8401IGY-T1 Note: Sample stock is generally held on all part numbers listed in BOLD. Note 1: XYY = assembly and date code. Package Information SC59 2.80 ± 0.20 1.575 ± 0.125 2.85 ± 0.15 0.95 BSC 8401.2003.06.0.61 0.40 ± 0.10 × 3 0.45 ± 0.15 0.14 ± 0.06 4° ± 4° 1.20 ± 0.30 0.075 ± 0.075 1.90 BSC 5 AAT8401 20V P-Channel Power MOSFET AnalogicTech cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in an AnalogicTech product. No circuit patent licenses, copyrights, mask work rights, or other intellectual property rights are implied. AnalogicTech reserves the right to make changes to their products or specifications or to discontinue any product or service without notice, and advise customers to obtain the latest version of relevant information to verify, before placing orders, that information being relied on is current and complete. All products are sold subject to the terms and conditions of sale supplied at the time of order acknowledgement, including those pertaining to warranty, patent infringement, and limitation of liability. AnalogicTech warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with AnalogicTech’s standard warranty. Testing and other quality control techniques are utilized to the extent AnalogicTech deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed. Advanced Analogic Technologies, Inc. 830 E. Arques Avenue, Sunnyvale, CA 94085 Phone (408) 737-4600 Fax (408) 737-4611 6 8401.2003.06.0.61