ANALOGICTECH AAT9512

AAT9512
28V N-Channel Power MOSFET
General Description
Features
The AAT9512 is a low threshold MOSFET designed
for the battery, cell phone, and PDA markets. Using
AnalogicTech™'s ultra high density MOSFET
process and space saving small outline J-lead package, performance superior to that normally found in
a TSOP-6 footprint has been squeezed into the footprint of a SC70 package.
•
•
•
VDS(MAX) = 28V
ID(MAX) 1 = 4.5A @ 25°C
Low RDS(ON):
• 48 mΩ @ VGS = 4.5V
• 76 mΩ @ VGS = 2.5V
Applications
•
•
•
Top View
Battery Packs
Cellular & Cordless Telephones
Battery-powered portable equipment
Absolute Maximum Ratings
Symbol
VDS
VGS
D
D
D
D
8
7
6
5
1
S
2
S
3
S
4
G
(TA=25°C unless otherwise noted)
Description
Value
Drain-Source Voltage
Gate-Source Voltage
TA = 25°C
TA = 70°C
ID
Continuous Drain Current @ TJ=150 C
IDM
IS
Pulsed Drain Current 2
Continuous Source Current (Source-Drain Diode)
PD
Maximum Power Dissipation
TJ, TSTG
Preliminary Information
SC70JW-8 Package
1
1
TA = 25°C
TA = 70°C
Operating Junction and Storage Temperature Range
1
Units
28
±12
±4.5
±3.6
±20
1.2
1.6
1.0
-55 to 150
°C
Value
Units
102
78
35
°C/W
°C/W
°C/W
V
A
W
Thermal Characteristics
Symbol
RθJA
RθJA2
RθJF
9512.2003.04.0.61
Description
Typical Junction-to-Ambient steady state
Maximum Junction-to-Ambient t<5 seconds
Typical Junction-to-Foot 1
1
1
1
AAT9512
28V N-Channel Power MOSFET
Electrical Characteristics
Symbol
Description
(TJ=25°C unless otherwise noted)
Conditions
DC Characteristics
BVDSS
Drain-Source Breakdown Voltage VGS=0V, ID=250µA
VGS=4.5V, ID=4.5A
RDS(ON)
Drain-Source ON-Resistance 2
VGS=2.5V, ID=3.6A
ID(ON)
On-State Drain Current 2
VGS=4.5V, VDS=5V (Pulsed)
VGS(th)
Gate Threshold Voltage
VGS=VDS, ID=250µA
IGSS
Gate-Body Leakage Current
VGS=±12V, VDS=0V
VGS=0V, VDS=28V
IDSS
Drain Source Leakage Current
VGS=0V, VDS=23V, TJ=70°C
gfs
Forward Transconductance 2
VDS=5V, ID=4.5A
3
Dynamic Characteristics
QG
Total Gate Charge
VDS=15V, RD=3.0Ω, VGS=4.5V
QGS
Gate-Source Charge
VDS=15V, RD=3.0Ω, VGS=4.5V
QGD
Gate-Drain Charge
VDS=15V, RD=3.0Ω, VGS=4.5V
tD(ON)
Turn-ON Delay
VDD=15V, VGS=4.5V, RD=3.0Ω,
tR
Turn-ON Rise Time
VDD=15V, VGS=4.5V, RD=3.0Ω,
tD(OFF)
Turn-OFF Delay
VDD=15V, VGS=4.5V, RD=3.0Ω,
tF
Turn-OFF Fall Time
VDD=15V, VGS=4.5V, RD=3.0Ω,
Source-Drain Diode Characteristics
VSD
Source-Drain Forward Voltage 2
VGS=0, IS=4.5A
IS
Continuous Diode Current 1
Min
Typ
Max
28
V
36
57
48
76
20
0.6
±100
1
5
7
RG=6Ω
RG=6Ω
RG=6Ω
RG=6Ω
Units
mΩ
A
V
nA
µA
S
5
0.9
1
6
3
30
8
nC
ns
1.6
1.2
V
A
Note 1: Based on thermal dissipation from junction to ambient while mounted on a 1” x 1” PCB with optimized layout. A 5 second pulse
on a 1” x 1” PCB approximates testing a device mounted on a large multi-layer PCB as in many applications. RθJF + RθFA = RθJA
where the foot thermal reference is defined as the normal solder mounting surface of the device’s leads. RθJF is guaranteed by
design; however, RθFA is determined by PCB design. Actual maximum continuous current is limited by the application’s design.
Note 2: Pulse test: Pulse width = 300 µs.
Note 3: Guaranteed by design. Not subject to production testing.
2
9512.2003.04.0.61
AAT9512
28V N-Channel Power MOSFET
Typical Characteristics
(TJ = 25ºC unless otherwise noted)
Transfer Characteristics
Output Characteristics
16
IDS (A)
20
5V
4.5V
4V
3V
2.5V
8
2.V
4
25°C
12
125°C
8
4
1.5V
0
0.5
-55°C
16
12
0
VD = VG
3.5V
ID (A)
20
1
1.5
0
2
0
1
2
VDS (V)
3
4
VGS (V)
On-Resistance vs. Drain Current
On-Resistance vs. Gate to Source Voltage
0.1
0.16
I D = 5A
0.12
0.1
RDS(ON) (Ω)
RDS(ON) (Ω)
0.14
VGS = 2.5V
0.08
0.06
0.04
0.06
0.04
0.02
VGS = 4.5V
0.02
0.08
0
0
0
5
10
15
20
0
1
2
ID (A)
5
Threshold Voltage
1.8
0.4
VGS = 4.5V
ID = 5A
VGS(th) Variance (V)
Normalized RDS(ON)
4
VGS (V)
On-Resistance vs. Junction Temperature
1.6
3
1.4
1.2
1
ID = 250µA
0.2
0
-0.2
0.8
0.6
-50
-0.4
-50
-25
0
25
50
TJ (°C)
9512.2003.04.0.61
75
100
125
150
-25
0
25
50
75
100
125
150
TJ (°C)
3
AAT9512
28V N-Channel Power MOSFET
Typical Characteristics
(TJ = 25ºC unless otherwise noted)
Gate Charge
100
5
VD = 15V
I D = 5A
IS (A)
4
VG (V)
Source-Drain Diode Forward Voltage
3
TJ = 150°C
10
2
TJ = 25°C
1
1
0
0
1
2
3
4
5
QG, Charge (nC)
0.1
0
0.5
1
1.5
VSD (V)
Capacitance
750
Capacitance (pF)
Ciss
600
450
300
Crss
150
Coss
0
0
10
20
30
VDS (V)
4
9512.2003.04.0.61
AAT9512
28V N-Channel Power MOSFET
Ordering Information
Package
Marking1
Part Number (Tape and Reel)
SC70JW-8
GOXYY
AAT9512IJS-T1
Note: Sample stock is generally held on all part numbers listed in BOLD.
Note 1: XYY = assembly and date code.
Package Information
2.20 ± 0.20
1.75 ± 0.10
0.50 BSC 0.50 BSC 0.50 BSC
0.225 ± 0.075
2.00 ± 0.20
0.100
7° ± 3°
0.45 ± 0.10
4° ± 4°
0.05 ± 0.05
0.15 ± 0.05
1.10 MAX
0.85 ± 0.15
0.048REF
2.10 ± 0.30
All dimensions in millimeters.
9512.2003.04.0.61
5
AAT9512
28V N-Channel Power MOSFET
AnalogicTech cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in an AnalogicTech product. No circuit patent licenses, copyrights, mask work
rights, or other intellectual property rights are implied.
AnalogicTech reserves the right to make changes to their products or specifications or to discontinue any product or service without notice, and advise customers to obtain the latest
version of relevant information to verify, before placing orders, that information being relied on is current and complete. All products are sold subject to the terms and conditions of sale
supplied at the time of order acknowledgement, including those pertaining to warranty, patent infringement, and limitation of liability.
AnalogicTech warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with AnalogicTech’s standard warranty. Testing and
other quality control techniques are utilized to the extent AnalogicTech deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily
performed.
Advanced Analogic Technologies, Inc.
830 E. Arques Avenue, Sunnyvale, CA 94085
Phone (408) 737-4600
Fax (408) 737-4611
6
9512.2003.04.0.61