APM2504NU N-Channel Enhancement Mode MOSFET Features • Pin Description 25V/75A , RDS(ON)=3.6mΩ(typ.) @ VGS=10V RDS(ON)=5.4mΩ(typ.) @ VGS=4.5V • • • G Super High Dense Cell Design D S Reliable and Rugged Top View of TO-252 Lead Free Available (RoHS Compliant) D Applications • Power Management in Desktop Computer or G DC/DC Converters S N-Channel MOSFET Ordering and Marking Information P ackage C ode U : T O -2 5 2 O p e ra tin g J u n c tio n T e m p . R a n g e C : -5 5 to 1 5 0 °C H a n d lin g C o d e TU : Tube TR : Tape & Reel L e a d F re e C o d e L : L e a d F re e D e v ic e B la n k : O rig in a l D e v ic e A PM 2504N L e a d F re e C o d e H a n d lin g C o d e T em p. R ange P ackage C ode A PM 2504N U : A PM 2504N XXXXX X X X X X - D a te C o d e Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte in plate termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. B.1 - May., 2005 1 www.anpec.com.tw APM2504NU Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (TA = 25°C) VDSS Drain-Source Voltage 25 VGSS Gate-Source Voltage ±20 IS Diode Continuous Forward Current 20 A TJ Maximum Junction Temperature 150 °C -55 to 150 °C TSTG Storage Temperature Range V Mounted on Large Heat Sink IDP 300ìs Pulse Drain Current Tested ID Continuous Drain Current PD Maximum Power Dissipation RθJC TC=25°C 180 TC=100°C 100 TC=25°C 75 TC=100°C 50 TC=25°C 50 TC=100°C 20 * 2.5 Thermal Resistance-Junction to Case A A W °C/W 2 Mounted on PCB of 1in Pad Area IDP 300ìs Pulse Drain Current Tested ID Continuous Drain Current PD RθJA Maximum Power Dissipation TA=25°C 180 TA=100°C 100 TA=25°C 19 TA=100°C 12 TA=25°C 2.5 TA=100°C 1 Thermal Resistance-Junction to Ambient 50 A A W °C/W Mounted on PCB of Minimum Footprint IDP ID PD RθJA 300ìs Pulse Drain Current Tested Continuous Drain Current Maximum Power Dissipation Thermal Resistance-Junction to Ambient TA=25°C 180 TA=100°C 100 TA=25°C 15 TA=100°C 9 TA=25°C 1.6 °C/W TA=100°C 0.6 °C/W 75 °C/W A A Note: * Current limited by bond wire. Copyright ANPEC Electronics Corp. Rev. B.1 - May., 2005 2 www.anpec.com.tw APM2504NU Electrical Characteristics Symbol Parameter (TA = 25°C unless otherwise noted) Test Condition Drain-Source Avalanche Ratings EAS Drain-Source Avalanche Energy ID=35A, VDD=15V Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA IDSS VGS(th) IGSS RDS(ON) a Zero Gate Voltage Drain Current VDS=20V, VGS=0V Gate Threshold Voltage VDS=VGS, IDS=250µA Gate Leakage Current VGS=±20V, VDS=0V Drain-Source On-state Resistance Diode Characteristics a VSD Diode Forward Voltage APM2504NU Min. Typ. Max. 100 25 1.3 Unit mJ V 1.8 1 µA 2.5 V ±100 nA VGS=10V, IDS=40A 3.6 4.5 VGS=4.5V, IDS=20A 5.4 7 ISD=20A, VGS=0V 0.8 1.3 mΩ V b Dynamic Characteristics RG Gate Resistance VGS=0V,VDS=0V,F=1MHz Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time Tr Turn-on Rise Time td(OFF) Turn-off Delay Time Tf VGS=0V, VDS=15V, Frequency=1.0MHz VDD=10V, RL=10Ω, IDS=1A, VGEN=4.5V, RG=6Ω Turn-off Fall Time Gate Charge Characteristics Qg Total Gate Charge 1 Ω 4350 pF 920 pF 670 pF 18 34 ns 21 39 ns 85 130 ns 25 40 ns 38.5 50 nC b Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS=15V, VGS=4.5V, IDS=20A 13.6 nC 17.2 nC Notes: a : Pulse test ; pulse width≤300µs, duty cycle≤2%. b : Guaranteed by design, not subject to production testing. Copyright ANPEC Electronics Corp. Rev. B.1 - May., 2005 3 www.anpec.com.tw APM2504NU Typical Characteristics Drain Current Power Dissipation 60 90 80 50 ID - Drain Current (A) Ptot - Power (W) 70 40 30 20 60 50 40 30 20 10 10 o 0 o TC=25 C 0 20 40 0 60 80 100 120 140 160 180 20 40 60 80 100 120 140 160 Tj - Junction Temperature (°C) Safe Operation Area Thermal Transient Impedance 2 it im )L n o s( Rd Normalized Transient Thermal Resistance ID - Drain Current (A) 0 Tj - Junction Temperature (°C) 300 100 TC=25 C,VG=10V 1ms 10ms 100ms 10 1s DC 1 o T =25 C 0.1 C 0.1 1 10 70 Duty = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 Single Pulse 2 1E-3 1E-4 Mounted on 1in pad o RθJA :50 C/W 1E-3 0.01 0.1 1 10 100 Square Wave Pulse Duration (sec) VDS - Drain - Source Voltage (V) Copyright ANPEC Electronics Corp. Rev. B.1 - May., 2005 1 4 www.anpec.com.tw APM2504NU Typical Characteristics (Cont.) Drain-Source On Resistance Output Characteristics 180 10 VGS= 6,7,8,9,10V 5V 9 RDS(ON) - On - Resistance (mΩ) 160 ID - Drain Current (A) 140 4.5V 120 100 80 4V 60 40 3.5V 7 6 5 3 2 1 3V 0.4 0.8 1.2 1.6 0 2.0 30 60 90 120 150 ID - Drain Current (A) Transfer Characteristics Gate Threshold Voltage 180 1.6 IDS =250µA Normalized Threshold Vlotage 160 140 ID - Drain Current (A) 0 VDS - Drain - Source Voltage (V) 180 o Tj=125 C 120 100 o Tj=25 C 80 o 60 Tj=-55 C 40 1.4 1.2 1.0 0.8 0.6 0.4 20 0 VGS=10V 4 20 0 0.0 VGS=4.5V 8 0 1 2 3 4 5 6 0.2 -50 -25 7 25 50 75 100 125 150 Tj - Junction Temperature (°C) VGS - Gate - Source Voltage (V) Copyright ANPEC Electronics Corp. Rev. B.1 - May., 2005 0 5 www.anpec.com.tw APM2504NU Typical Characteristics (Cont.) Drain-Source On Resistance Source-Drain Diode Forward 1.8 200 VGS = 10V IDS = 40A 100 1.4 IS - Source Current (A) Normalized On Resistance 1.6 1.2 1.0 0.8 o Tj=150 C o Tj=25 C 10 0.6 o RON@Tj=25 C: 3.6mΩ 0.4 -50 -25 0 25 50 1 0.0 75 100 125 150 0.9 1.2 1.5 VSD - Source - Drain Voltage (V) Capacitance Gate Charge 10 Frequency=1MHz VDS=10V ID =20A VGS - Gate-source Voltage (V) 7000 6000 C - Capacitance (pF) 0.6 Tj - Junction Temperature (°C) 8000 5000 Ciss 4000 3000 2000 Coss 1000 0 0.3 8 6 4 2 Crss 0 5 10 15 20 0 25 15 30 45 60 75 QG - Gate Charge (nC) VDS - Drain - Source Voltage (V) Copyright ANPEC Electronics Corp. Rev. B.1 - May., 2005 0 6 www.anpec.com.tw APM2504NU Packaging Information TO-252( Reference JEDEC Registration TO-252) E A b2 C1 L2 D H L1 L b C e1 Dim A A1 Mi ll im et er s Inc he s Min . Ma x . Min . Ma x . 2. 1 8 2. 3 9 0. 0 86 0. 0 94 A1 0. 8 9 1. 2 7 0. 0 35 0. 0 50 b 0. 5 08 0. 8 9 0. 0 20 0. 0 35 b2 5. 2 07 5. 4 61 0. 2 05 0. 2 15 C 0. 4 6 0. 5 8 0. 0 18 0. 0 23 C1 0. 4 6 0. 5 8 0. 0 18 0. 0 23 D 5. 3 34 6. 2 2 0. 2 10 0. 2 45 E 6. 3 5 6. 7 3 0. 2 50 0. 2 65 e1 3. 9 6 5. 1 8 0. 1 56 0. 2 04 H 9. 3 98 10 . 41 0. 3 70 0. 4 10 L 0. 5 1 L1 0. 6 4 1. 0 2 0. 0 25 0. 0 40 L2 0. 8 9 2. 0 32 0. 0 35 0. 0 80 Copyright ANPEC Electronics Corp. Rev. B.1 - May., 2005 0. 0 20 7 www.anpec.com.tw APM2504NU Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Reflow Condition (IR/Convection or VPR Reflow) tp TP C ritical Zone T L to T P T e m p e ra tu re R am p-up TL tL T sm ax T sm in R am p-down ts Preheat 25 t 25 °C to Peak T im e Classification Reflow Profiles Profile Feature Average ramp-up rate (TL to TP) Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts) Time maintained above: - Temperature (TL) - Time (tL) Peak/Classificatioon Temperature (Tp) Time within 5°C of actual Peak Temperature (tp) Ramp-down Rate Sn-Pb Eutectic Assembly Pb-Free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 217°C 60-150 seconds See table 1 See table 2 10-30 seconds 20-40 seconds 6°C/second max. 6°C/second max. 6 minutes max. 8 minutes max. Time 25°C to Peak Temperature Notes: All temperatures refer to topside of the package .Measured on the body surface. Copyright ANPEC Electronics Corp. Rev. B.1 - May., 2005 8 www.anpec.com.tw APM2504NU Classification Reflow Profiles(Cont.) Table 1. SnPb Entectic Process – Package Peak Reflow Tem peratures 3 3 Package Thickness Volum e m m Volum e m m <350 ≥350 <2.5 m m 240 +0/-5°C 225 +0/-5°C ≥2.5 m m 225 +0/-5°C 225 +0/-5°C Table 2. Pb-free Process – Package Classification Reflow Tem peratures 3 3 3 Package Thickness Volum e mm Volum e mm Volum e mm <350 350-2000 >2000 <1.6 m m 260 +0°C* 260 +0°C* 260 +0°C* 1.6 m m – 2.5 m m 260 +0°C* 250 +0°C* 245 +0°C* ≥2.5 m m 250 +0°C* 245 +0°C* 245 +0°C* *Tolerance: The device m anufacturer/supplier shall assure process com patibility up to and including the stated classification tem perature (this m eans Peak reflow tem perature +0°C. For exam ple 260°C+0°C) at the rated MSL level. Reliability Test Program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245°C,5 SEC 1000 Hrs Bias @ 125°C 168 Hrs, 100% RH, 121°C -65°C ~ 150°C, 200 Cycles Carrier Tape & Reel Dimensions t E P Po D P1 Bo F W Ao Copyright ANPEC Electronics Corp. Rev. B.1 - May., 2005 D1 9 Ko www.anpec.com.tw APM2504NU Carrier Tape & Reel Dimensions (Cont.) T2 J C A B T1 Application TO-252 A B C J 330 ±3 100 ± 2 13 ± 0. 5 2 ± 0.5 F D D1 Po 7.5 ± 0.1 1.5 +0.1 T1 T2 16.4 + 0.3 2.5± 0.5 -0.2 1.5± 0.25 4.0 ± 0.1 W 16+ 0.3 - 0.1 P E 8 ± 0.1 1.75± 0.1 P1 Ao Bo Ko t 2.0 ± 0.1 6.8 ± 0.1 10.4± 0.1 2.5± 0.1 0.3±0.05 (mm) Cover Tape Dimensions Application TO- 252 Carrier Width 16 Cover Tape Width 13.3 Devices Per Reel 2500 Customer Service Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright ANPEC Electronics Corp. Rev. B.1 - May., 2005 10 www.anpec.com.tw