APM9922K Dual N-Channel Enhancement Mode MOSFET Pin Description Features • 20V/6A, RDS(ON) =28mΩ(typ.) @ VGS =4.5V RDS(ON) =34mΩ(typ.) @ VGS =2.5V • • • Super High Dense Cell Design Reliable and Rugged Top View of SOP − 8 Lead Free Available (RoHS Compliant) (8) (7) D1 D1 Applications • (6) D2 (5) D2 Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems (4) G2 (2) G1 S1 (1) S2 (3) N-Channel MOSFET Ordering and Marking Information Package Code K : SOP-8 Operating Junction Temp. Range C : -55 to 150 ° C Handling Code TU : Tube TR : Tape & Reel Lead Free Code L : Lead Free Device Blank : Original Device APM9922 Lead Free Code Handling Code Temp. Range Package Code APM9922 K : APM9922 XXXXX XXXXX - Date Code Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. B.1 - Jun., 2005 1 www.anpec.com.tw APM9922K Absolute Maximum Ratings Symbol (TA = 25°C unless otherwise noted) Parameter Rating VDSS Drain-Source Voltage 20 VGSS Gate-Source Voltage ±10 Continuous Drain Current IDM* IS* 300µs Pulsed Drain Current Diode Continuous Forward Current TJ Maximum Junction Temperature Storage Temperature Range PD* Maximum Power Dissipation RθJA* V 6 ID* TSTG Unit VGS=4.5V A 20 A 1.7 150 °C -55 to 150 TA=25°C 2 TA=100°C 0.8 Thermal Resistance-Junction to Ambient W 62.5 °C/W Note: *Surface Mounted on 1in pad area, t ≤ 10sec. 2 Electrical Characteristics Symbol Parameter Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS VGS(th) IGSS Zero Gate Voltage Drain Current Test Condition VGS=0V, IDS=250µA Gate Leakage Current VGS=±10V, VDS=0V Gate-Source Charge Qgd Gate-Drain Charge Copyright ANPEC Electronics Corp. Rev. B.1 - Jun., 2005 Typ. Max. 20 1 30 0.5 0.7 V ±100 nA 32 VGS=2.5V, IDS=5.2A 34 45 ISD=1.7A, VGS=0V 0.7 1.3 10 13 3.6 µA 1.5 28 VDS=10V, VGS=4.5V, IDS=6A Unit V VGS=4.5V, IDS=6A Gate Charge Characteristics b Qg Total Gate Charge Qgs Min. TJ=85°C VDS=VGS, IDS=250µA Diode Forward Voltage APM9922K VDS=16V, VGS=0V Gate Threshold Voltage RDS(ON) a Drain-Source On-state Resistance VSDa (TA = 25°C unless otherwise noted) mΩ V nC 2 2 www.anpec.com.tw APM9922K Electrical Characteristics (Cont.) Symbol Parameter Dynamic Characteristicsb RG Gate Resistance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time Tr Turn-on Rise Time td(OFF) Turn-off Delay Time Tf (T A = 25°C unless otherwise noted) Test Condition VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS=15V, Frequency=1.0MHz VDD=10V, RL=10Ω, IDS=1A, VGEN=4.5V, RG=6Ω Turn-off Fall Time APM9922K Min. Typ. Max. Unit Ω 9 520 pF 110 70 17 32 15 28 45 82 25 46 ns Notes: a : Pulse test ; pulse width≤300µs, duty cycle≤2%. b : Guaranteed by design, not subject to production testing. Copyright ANPEC Electronics Corp. Rev. B.1 - Jun., 2005 3 www.anpec.com.tw APM9922K Typical Characteristics Drain Current Power Dissipation 7 2.5 6 ID - Drain Current (A) Ptot - Power (W) 2.0 1.5 1.0 5 4 3 2 0.5 1 o TA=25 C,VG=4.5V o 0.0 TA=25 C 0 20 40 60 0 80 100 120 140 160 40 60 80 100 120 140 160 Tj - Junction Temperature (°C) Safe Operation Area Thermal Transient Impedance Normalized Transient Thermal Resistance Lim it 300µs Rd s(o n) 10 ID - Drain Current (A) 20 Tj - Junction Temperature (°C) 50 1ms 10ms 1 100ms 1s 0.1 DC o TA=25 C 0.01 0.01 0 0.1 1 10 Rev. B.1 - Jun., 2005 1 Duty = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 Single Pulse 2 1E-3 1E-4 100 VDS - Drain - Source Voltage (V) Copyright ANPEC Electronics Corp. 2 Mounted on 1in pad o RθJA : 62.5 C/W 1E-3 0.01 0.1 1 10 30 Square Wave Pulse Duration (sec) 4 www.anpec.com.tw APM9922K Typical Characteristics (Cont.) Output Characteristics Drain-Source On Resistance 60 20 VGS= 2, 3, 4, 5, 6, 7, 8, 9, 10V 1V 16 ID - Drain Current (A) 55 RDS(ON) - On - Resistance (mΩ) 18 14 12 10 0.5V 8 6 4 2 0 45 VGS= 4.5V 40 35 VGS=10V 30 25 20 15 10 0 1 2 3 4 0 5 4 8 12 16 VDS - Drain-Source Voltage (V) ID - Drain Current (A) Transfer Characteristics Gate Threshold Voltage 1.6 Normalized Threshold Voltage 20 16 ID - Drain Current (A) 50 12 8 o Tj=25 C o Tj=-55 C 4 o Tj=125 C 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Copyright ANPEC Electronics Corp. Rev. B.1 - Jun., 2005 IDS =250µA 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 VGS - Gate - Source Voltage (V) 20 0 25 50 75 100 125 150 Tj - Junction Temperature (°C) 5 www.anpec.com.tw APM9922K Typical Characteristics (Cont.) Drain-Source On Resistance Source-Drain Diode Forward 20 2.0 VGS= 4.5V ID = 6A 1.6 10 1.4 o IS - Source Current (A) Normalized On Resistance 1.8 1.2 1.0 0.8 0.6 0.4 0.2 Tj=150 C o Tj=25 C o RON@Tj=25 C: 28mΩ 0.0 -50 -25 0 25 50 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 75 100 125 150 Tj - Junction Temperature (°C) VSD - Source - Drain Voltage (V) Capacitance Gate Charge 10 800 Frequency=1MHz VGS - Gate - source Voltage (V) C - Capacitance (pF) 600 Ciss 500 400 300 200 Coss Crss 100 0 VDS= 10V 9 700 0 4 8 12 16 Rev. B.1 - Jun., 2005 7 6 5 4 3 2 1 0 4 8 12 16 20 QG - Gate Charge (nC) VDS - Drain - Source Voltage (V) Copyright ANPEC Electronics Corp. 8 0 20 ID = 6A 6 www.anpec.com.tw APM9922K Packaging Information E e1 0.015X45 SOP-8 pin ( Reference JEDEC Registration MS-012) H e2 D A1 A 1 L 0.004max. Dim Millimeters Inches Min. Max. Min. Max. A 1.35 1.75 0.053 0.069 A1 0.10 0.25 0.004 0.010 D 4.80 5.00 0.189 0.197 E 3.80 4.00 0.150 0.157 H 5.80 6.20 0.228 0.244 L 0.40 1.27 0.016 0.050 e1 0.33 0.51 0.013 0.020 e2 1.27BSC 0.50BSC φ 1 8° 8° Copyright ANPEC Electronics Corp. Rev. B.1 - Jun., 2005 7 www.anpec.com.tw APM9922K Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Reflow Condition (IR/Convection or VPR Reflow) tp TP Critical Zone T L to T P Temperature Ramp-up TL tL Tsmax Tsmin Ramp-down ts Preheat 25 t 25 °C to Peak Time Classification Reflow Profiles Profile Feature Average ramp-up rate (TL to TP) Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts) Time maintained above: - Temperature (T L) - Time (tL) Peak/Classificatioon Temperature (Tp) Time within 5°C of actual Peak Temperature (tp) Ramp-down Rate Sn-Pb Eutectic Assembly Pb-Free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 217°C 60-150 seconds See table 1 See table 2 10-30 seconds 20-40 seconds 6°C/second max. 6°C/second max. 6 minutes max. 8 minutes max. Time 25°C to Peak Temperature Notes: All temperatures refer to topside of the package .Measured on the body surface. Copyright ANPEC Electronics Corp. Rev. B.1 - Jun., 2005 8 www.anpec.com.tw APM9922K Classification Reflow Profiles(Cont.) Table 1. SnPb Entectic Process – Package Peak Reflow Temperature s 3 3 Package Thickness Volume mm Volume mm <350 ≥350 <2.5 mm 240 +0/-5°C 225 +0/-5°C ≥2.5 mm 225 +0/-5°C 225 +0/-5°C Table 2. Pb-free Process – Package Classification Reflow Temperatures 3 3 3 Package Thickness Volume mm Volume mm Volume mm <350 350-2000 >2000 <1.6 mm 260 +0°C* 260 +0°C* 260 +0°C* 1.6 mm – 2.5 mm 260 +0°C* 250 +0°C* 245 +0°C* ≥2.5 mm 250 +0°C* 245 +0°C* 245 +0°C* *Tolerance: The device manufacturer/supplier shall assure process compatibility up to and including the stated classification temperature (this means Peak reflow temperature +0°C. For example 260°C+0°C) at the rated MSL level. Reliability Test Program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245°C,5 SEC 1000 Hrs Bias @ 125°C 168 Hrs, 100% RH, 121°C -65°C ~ 150°C, 200 Cycles Carrier Tape & Reel Dimensions t E P Po D P1 Bo F W Ao Copyright ANPEC Electronics Corp. Rev. B.1 - Jun., 2005 D1 9 Ko www.anpec.com.tw APM9922K Carrier Tape & Reel Dimensions(Cont.) T2 J C A B T1 Application A 330±1 SOP-8 F 5.5 ± 0.1 B 62 ± 1.5 C 12.75 + 0.1 5 J 2 + 0.5 D D1 Po 1.55±0.1 1.55+ 0.25 4.0 ± 0.1 T1 12.4 +0.2 T2 2± 0.2 W 12 + 0.3 - 0.1 P1 2.0 ± 0.1 Ao 6.4 ± 0.1 Bo 5.2± 0.1 Carrier Width 12 E 1.75± 0.1 Ko t 2.1± 0.1 0.3±0.013 (mm) Cover Tape Dimensions Application SOP- 8 P 8± 0.1 Cover Tape Width 9.3 Devices Per Reel 2500 Customer Service Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright ANPEC Electronics Corp. Rev. B.1 - Jun., 2005 10 www.anpec.com.tw