APM4220KA N-Channel Enhancement Mode MOSFET Pin Description Features • • • • • • 25V/16A, RDS(ON)=7.5mΩ(typ.) @ VGS=10V RDS(ON)=10mΩ(typ.) @ VGS=4.5V Super High Dense Cell Design Avalanche Rated Reliable and Rugged Thermal Pad Exposed with Standard SOP-8 Outline Lead Free Available (RoHS Compliant) SOP − 8 Exposed = Thermal Pad (connected to Drain plane for better heat dissipation) ( 5,6,7,8 ) D D DD Applications • Power Management in Notebook Computer, (4) G Portable Equipment and Battery Powered Systems S S S (1, 2, 3) N-Channel MOSFET Ordering and Marking Information Package Code KA : SOP-8-P Operating Junction Tem p. Range C : -55 to 150°C Handling Code TU : Tube TR : Tape & Reel Lead Free Code L : Lead Free Device Blank : O riginal Device APM 4220 Lead Free Code Handling Code Tem p. Range Package Code APM 4220 KA : • • APM 4220 XXXXX XXXXX - Date Code Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte in plate termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. B.1 - Apr., 2005 1 www.anpec.com.tw APM4220KA Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage 25 VGSS Gate-Source Voltage ±20 Maximum Junction Temperature 150 °C -55 to 150 °C TJ TSTG Storage Temperature Range V Mounted on Large Heat Sink PD Maximum Power Dissipation TC=25°C 50 TC=100°C 20 RθJC Thermal Resistance-Junction to Case j Mounted on PCB of 1in2 Pad Area IDP Continuous Drain Current PD Maximum Power Dissipation TA=25°C 50 TA=100°C 25 TA=25°C 16 TA=100°C 8 TA=25°C 3 TA=100°C 1.2 Thermal Resistance-Junction to Ambient k Mounted on PCB of Minimum Footprint TA=25°C 50 TA=100°C 25 TA=25°C 13 TA=100°C 6 TA=25°C 2.5 TA=100°C 1 Thermal Resistance-Junction to Minimum Footprint 50 300ìs Pulse Drain Current Tested ID Continuous Drain Current PD RθJA Maximum Power Dissipation A A W 40 RθJA IDP °C/W 2.5 300ìs Pulse Drain Current Tested ID W °C/W A A W °C/W Notes: j.The value of RθJA is when the device mounted on k. The value of RθJA is when the device mounted on minimum pad with 2oz. Copper, t ≤ 10s. 1in2 pad with 2oz. Copper, t ≤ 10s. Copyright ANPEC Electronics Corp. Rev. B.1 - Apr., 2005 2 www.anpec.com.tw APM4220KA Electrical Characteristics Symbol (TA = 25°C unless otherwise noted) Parameter Test Condition Drain-Source Avalanche Ratings EAS Avalanche Energy, Single Pulsed ID=15A, VDD=15V Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA APM4220KA Min. Typ. 50 25 Zero Gate Voltage Drain Current VDS=20V, VGS=0V IGSS RDS(ON) VSD a a Gate Threshold Voltage VDS=VGS, IDS=250µA Gate Leakage Current VGS=±20V, VDS=0V Drain-Source On-state Resistance Diode Forward Voltage Gate Charge Characteristics Qg Total Gate Charge mJ 1 30 TA=25°C VGS(th) Unit V VDS=20V, VGS=0V IDSS Max. 1.3 1.8 µA 2.5 V ±100 nA VGS=10V, IDS=16A 7.5 9 VGS=4.5V, IDS=14A 10 12 ISD=3A, VGS=0V 0.8 1.3 20 26 mΩ V b Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS=10V, VGS=4.5V, IDS=12A nC 4.8 8.4 b Dynamic Characteristics RG Gate Resistance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time Tr Turn-on Rise Time td(OFF) Tf Turn-off Delay Time VGS=0V, VDS=0V, f=1MHz VGS=0V, VDS=15V, Frequency=1.0MHz VDD=15V, RL=15Ω, IDS=1A, VGEN=10V, RG=6Ω Turn-off Fall Time Ω 2 1785 500 pF 300 10 19 7 13 69 95 32 46 ns Notes: a: Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%. b: Guaranteed by design, not subject to production testing. Copyright ANPEC Electronics Corp. Rev. B.1 - Apr., 2005 3 www.anpec.com.tw APM4220KA Typical Characteristics Power Dissipation Drain Current 3.5 18 15 2.5 ID - Drain Current (A) Ptot - Power (W) 3.0 2.0 1.5 1.0 20 40 60 0 20 40 60 80 100 120 140 160 Tj - Junction Temperature (°C) Tj - Junction Temperature (°C) Safe Operation Area Thermal Transient Impedance it im on )L Rd s( ID - Drain Current (A) 6 0 80 100 120 140 160 Normalized Transient Thermal Resistance 0 100 10 9 3 0.5 0.0 12 300µs 1ms 1 10ms 100ms 1s DC 0.1 O T =25 C 0.01 A 0.01 0.1 1 10 1 Duty = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 Single Pulse 0.01 2 1E-3 1E-4 100 VDS - Drain - Source Voltage (V) Copyright ANPEC Electronics Corp. Rev. B.1 - Apr., 2005 2 Mounted on 1in pad o RθJA : 40 C/W 1E-3 0.01 0.1 1 10 30 Square Wave Pulse Duration (sec) 4 www.anpec.com.tw APM4220KA Typical Characteristics (Cont.) Drain-Source On Resistance Output Characteristics 18 50 VGS=4,5,6,7,8,9,10V RDS(ON) - On - Resistance (mΩ) ID - Drain Current (A) 40 16 3V 30 20 2.5V 10 0 0 2 4 6 8 14 12 VGS=10V 8 6 4 2 0 10 VGS=4.5V 10 0 10 20 30 40 50 ID - Drain Current (A) VDS - Drain - Source Voltage (V) Transfer Characteristics Gate Threshold Voltage 50 1.6 IDS =250µA Normalized Threshold Voltage 1.4 ID - Drain Current (A) 40 30 o Tj=125 C 20 o Tj=25 C 10 0 0 1 2 o Tj=-55 C 3 4 1.0 0.8 0.6 0.4 0.2 0.0 -50 -25 5 0 25 50 75 100 125 150 Tj - Junction Temperature (°C) VGS - Gate - Source Voltage (V) Copyright ANPEC Electronics Corp. Rev. B.1 - Apr., 2005 1.2 5 www.anpec.com.tw APM4220KA Typical Characteristics (Cont.) Source-Drain Diode Forward Drain-Source On Resistance 50 2.00 VGS = 10V IDS = 12A 1.50 o 10 IS - Source Current (A) Normalized On Resistance 1.75 1.25 1.00 0.75 0.50 Tj=150 C o Tj=25 C 1 0.25 o RON@Tj=25 C: 7.5mΩ 0.00 -50 -25 0 25 50 75 0.1 0.0 100 125 150 0.2 0.4 Capacitance 1.0 1.2 1.4 1.6 Gate Charge 3000 10 Frequency=1MHz VDS=10V 9 I = 12A D VGS - Gate-source Voltage (V) 2500 C - Capacitance (pF) 0.8 VSD - Source - Drain Voltage (V) Tj - Junction Temperature (°C) 2000 Ciss 1500 1000 Coss 500 Crss 0 0.6 0 5 10 15 20 7 6 5 4 3 2 1 0 25 VDS - Drain - Source Voltage (V) Copyright ANPEC Electronics Corp. Rev. B.1 - Apr., 2005 8 0 5 10 15 20 25 30 35 40 QG - Gate Charge (nC) 6 www.anpec.com.tw APM4220KA Avalanche Test Circuit and Waveforms V DS tp L V D SX(SU S) V DS DUT IA S RG V DD V DD EA S IL tp 0.0 1 Ω tAV Switching Time Test Circuit and Waveforms V DS RD V DS DUT V 90% GS RG V DD 10% V GS tp t d (on) t r Copyright ANPEC Electronics Corp. Rev. B.1 - Apr., 2005 7 t d (off) t f www.anpec.com.tw APM4220KA Packaging Information E E1 0.015X 45 SOP-8-P pin ( Reference JEDEC Registration MS-012) H D1 e1 e2 D A1 A L 0.004m ax. Dim 1 M illimet ers Inches M in. M ax. M in. M ax. A 1.35 1.75 0.053 0.069 A1 0.10 0.25 0.004 0.010 D 5.00 0.189 0.197 D1* 4.80 3.34 3.84 0.132 0.151 E 3.80 4.00 0.150 0.157 E1* 2.23 2.68 0.088 0.106 H 5.80 6.20 0.228 0.244 L 0.40 1.27 0.016 0.050 e1 0.33 0.51 0.013 0.020 e2 1.27BSC 0.50BSC φ 1 8° 8° * Thermal pad dimension Copyright ANPEC Electronics Corp. Rev. B.1 - Apr., 2005 8 www.anpec.com.tw APM4220KA Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Reflow Condition (IR/Convection or VPR Reflow) tp TP C ritical Zone T L to T P T e m p e ra tu re R am p-up TL tL T sm ax T sm in R am p-down ts Preheat 25 t 25 °C to Peak T im e Classification Reflow Profiles Profile Feature Average ramp-up rate (TL to TP) Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts) Time maintained above: - Temperature (TL) - Time (tL) Peak/Classificatioon Temperature (Tp) Time within 5°C of actual Peak Temperature (tp) Ramp-down Rate Sn-Pb Eutectic Assembly Pb-Free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 217°C 60-150 seconds See table 1 See table 2 10-30 seconds 20-40 seconds 6°C/second max. 6°C/second max. 6 minutes max. 8 minutes max. Time 25°C to Peak Temperature Notes: All temperatures refer to topside of the package .Measured on the body surface. Copyright ANPEC Electronics Corp. Rev. B.1 - Apr., 2005 9 www.anpec.com.tw APM4220KA Classification Reflow Profiles(Cont.) Table 1. SnPb Entectic Process – Package Peak Reflow Tem peratures 3 3 Package Thickness Volum e m m Volum e m m <350 ≥350 <2.5 m m 240 +0/-5°C 225 +0/-5°C ≥2.5 m m 225 +0/-5°C 225 +0/-5°C Table 2. Pb-free Process – Package Classification Reflow Tem peratures 3 3 3 Package Thickness Volum e mm Volum e mm Volum e mm <350 350-2000 >2000 <1.6 m m 260 +0°C* 260 +0°C* 260 +0°C* 1.6 m m – 2.5 m m 260 +0°C* 250 +0°C* 245 +0°C* ≥2.5 m m 250 +0°C* 245 +0°C* 245 +0°C* *Tolerance: The device m anufacturer/supplier shall assure process com patibility up to and including the stated classification tem perature (this m eans Peak reflow tem perature +0°C. For exam ple 260°C+0°C) at the rated MSL level. Reliability Test Program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245°C,5 SEC 1000 Hrs Bias @ 125°C 168 Hrs, 100% RH, 121°C -65°C ~ 150°C, 200 Cycles Carrier Tape t D P Po E P1 Bo F W Ko Ao Copyright ANPEC Electronics Corp. Rev. B.1 - Apr., 2005 D1 10 www.anpec.com.tw APM4220KA Carrier Tape(Cont.) T2 J C A B T1 Application SOP- 8-P A B 330 ± 1 F 5.5± 1 J T1 T2 W P E 62 +1.5 C 12.75+ 0.15 2 ± 0.5 12.4 ± 0.2 2 ± 0.2 12± 0. 3 8± 0.1 1.75±0.1 D D1 Po P1 Ao Bo Ko t 2.0 ± 0.1 6.4 ± 0.1 5.2± 0. 1 2.1± 0.1 .3±0.013 1.55 +0.1 1.55+ 0.25 4.0 ± 0.1 (mm) Cover Tape Dimensions Application SOP- 8-P Carrier Width 12 Cover Tape Width 9.3 Devices Per Reel 2500 Customer Service Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright ANPEC Electronics Corp. Rev. B.1 - Apr., 2005 11 www.anpec.com.tw