APM4953K Dual P-Channel Enhancement Mode MOSFET Pin Description Features • -30V/-4.9A , D1 D1 RDS(ON)=53mΩ(typ.) @ VGS=-10V RDS(ON)=80mΩ(typ.) @ VGS=-4.5V • • • • D2 D2 S1 G1 S2 G2 Super High Dense Cell Design Reliable and Rugged Top View of SOP − 8 SOP-8 Package Lead Free Available (RoHS Compliant) (1) S1 (3) S2 Applications • (2) G1 (4) G2 Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems D1 (7) D1 (8) D2 (5) D2 (6) P-Channel MOSFET Ordering and Marking Information Package Code K : SOP-8 Operating Junction Tem p. Range C : -55 to 150°C Handling Code TU : Tube TR : Tape & Reel Lead Free Code L : Lead Free Device Blank : Original Device APM4953 Lead Free Code Handling Code Temp. Range Package Code APM4953 K : APM4953 XXXXX XXXXX - Date Code Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte in plate termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 1 www.anpec.com.tw APM4953K Absolute Maximum Ratings Symbol (TA = 25°C unless otherwise noted) Parameter Rating VDSS Drain-Source Voltage -30 VGSS Gate-Source Voltage ±25 ID* Continuous Drain Current IDM* Pulsed Drain Current IS* Diode Continuous Forward Current TJ Maximum Junction Temperature V -4.9 VGS=-10V A -20 A -2 150 TSTG Storage Temperature Range PD* Power Dissipation for Single Operation RθJA* Unit °C -55 to 150 TA=25°C 2 TA=100°C 0.8 Thermal Resistance-Junction to Ambient W °C/W 62.5 Note: *Surface Mounted on 1in pad area, t ≤ 10sec. 2 Electrical Characteristics Symbol Parameter Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) IGSS RDS(ON) VSD a a (TA = 25°C unless otherwise noted) Test Condition VGS=0V, IDS=250µA Gate Leakage Current VGS=±25V, VDS=0V Gate Charge Characteristics Qg Total Gate Charge Typ. Max. -30 -1 -30 -1 -1.5 µA -2 V ±100 nA VGS=-10V, IDS=-4.9A 53 60 VGS=-4.5V, IDS=-3.6A 80 95 -0.7 -1.3 22.6 30 ISD=-1.7A, VGS=0V Unit V TJ=85°C VDS=VGS, IDS=250µA Diode Forward Voltage Min. VDS=-24V, VGS=0V Gate Threshold Voltage Drain-Source On-state Resistance APM4953K mΩ V b Qgs Gate-Source Charge Qgd Gate-Drain Charge Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 VDS=-15V, VGS=-10V, IDS=-4.9A 4.7 nC 2 2 www.anpec.com.tw APM4953K Electrical Characteristics (Cont.) Symbol Parameter (TA = 25°C unless otherwise noted) Test Condition APM4953K Min. Typ. Max. Unit b Dynamic Characteristics RG Gate Resistance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time Tr Turn-on Rise Time td(OFF) Turn-off Delay Time Tf VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS=-25V, Frequency=1.0MHz VDD=-15V, RL=15Ω, IDS=-1A, VGEN=-10V, RG=6Ω Turn-off Fall Time Ω 11 1260 pF 400 220 10 18 15 20 22 38 15 25 ns Notes: a : Pulse test ; pulse width≤300µs, duty cycle≤2%. b : Guaranteed by design, not subject to production testing. Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 3 www.anpec.com.tw APM4953K Typical Characteristics Drain Current Power Dissipation 2.5 6.0 -ID - Drain Current (A) Ptot - Power (W) 2.0 1.5 1.0 4.5 3.0 1.5 0.5 o TA=25 C,VG=-10V o 0.0 TA=25 C 0 20 40 60 0.0 80 100 120 140 160 40 60 80 100 120 140 160 Tj - Junction Temperature (°C) Safe Operation Area Thermal Transient Impedance Normalized Transient Thermal Resistance it im 300µs s( on )L 10 Rd -ID - Drain Current (A) 20 Tj - Junction Temperature (°C) 100 1ms 10ms 1 100ms 1s 0.1 DC o TA=25 C 0.01 0.01 0 0.1 1 10 1 Duty = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 Single Pulse 2 1E-3 1E-4 100 -VDS - Drain - Source Voltage (V) Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 2 Mounted on 1in pad o RθJA : 62.5 C/W 1E-3 0.01 0.1 1 10 30 Square Wave Pulse Duration (sec) 4 www.anpec.com.tw APM4953K Typical Characteristics (Cont.) Output Characteristics Drain-Source On Resistance 20 120 VGS= -5, -6, -7, -8, -9, -10V 18 RDS(ON) - On - Resistance (mΩ) -4V 16 -ID - Drain Current (A) 110 14 12 10 8 -3V 6 4 -2V 1 2 3 4 5 6 7 80 70 60 VGS= -10V 50 40 8 0 2 4 6 8 10 12 14 16 18 20 -VDS - Drain - Source Voltage (V) -ID - Drain Current (A) Transfer Characteristics Gate Threshold Voltage 1.8 18 IDS = -250µA Normalized Threshold Vlotage 1.6 16 -ID - Drain Current (A) 90 20 0 20 14 12 10 o Tj=125 C 8 6 o Tj=-55 C o Tj=25 C 4 1.4 1.2 1.0 0.8 0.6 0.4 2 0 VGS= -4.5V 30 2 0 100 0 1 2 3 4 5 0.2 -50 -25 6 -VGS - Gate - Source Voltage (V) Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 0 25 50 75 100 125 150 Tj - Junction Temperature (°C) 5 www.anpec.com.tw APM4953K Typical Characteristics (Cont.) Drain-Source On Resistance Source-Drain Diode Forward 20 2.00 VGS = -10V IDS = -4.9A 10 o Tj=150 C 1.50 -IS - Source Current (A) Normalized On Resistance 1.75 1.25 1.00 0.75 0.50 o Tj=25 C 1 0.25 o 0.00 -50 -25 RON@Tj=25 C: 53mΩ 0 25 50 75 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 100 125 150 Tj - Junction Temperature (°C) -VSD - Source-Drain Voltage (V) Capacitance Gate Charge 10 3000 Frequency=1MHz VD= -15V ID= -4.9A -VGS - Gate-source Voltage (V) C - Capacitance (pF) 2500 2000 1500 Ciss 1000 Coss 500 0 Crss 0 5 10 15 20 25 6 4 2 0 30 0 5 10 15 20 25 QG - Gate Charge (nC) -VDS - Drain-Source Voltage (V) Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 8 6 www.anpec.com.tw APM4953K Packaging Information E e1 0.015X45 SOP-8 pin ( Reference JEDEC Registration MS-012) H e2 D A1 1 L 0.004max. Dim A Mi ll im et er s Inche s A Min. 1. 35 Max . 1. 75 Min. 0. 053 Max . 0. 069 A1 D E 0. 10 4. 80 3. 80 0. 25 5. 00 4. 00 0. 004 0. 189 0. 150 0. 010 0. 197 0. 157 H L e1 e2 5. 80 0. 40 0. 33 6. 20 1. 27 0. 51 0. 228 0. 016 0. 013 0. 244 0. 050 0. 020 φ 1 Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 1. 27B S C 0. 50B S C 8° 8° 7 www.anpec.com.tw APM4953K Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Reflow Condition (IR/Convection or VPR Reflow) tp TP C ritical Zone T L to T P T e m p e ra tu re R am p-up TL tL T sm ax T sm in R am p-down ts Preheat 25 t 25 °C to Peak T im e Classification Reflow Profiles Profile Feature Average ramp-up rate (TL to TP) Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts) Time maintained above: - Temperature (TL) - Time (tL) Peak/Classificatioon Temperature (Tp) Time within 5°C of actual Peak Temperature (tp) Ramp-down Rate Sn-Pb Eutectic Assembly Pb-Free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 217°C 60-150 seconds See table 1 See table 2 10-30 seconds 20-40 seconds 6°C/second max. 6°C/second max. 6 minutes max. 8 minutes max. Time 25°C to Peak Temperature Notes: All temperatures refer to topside of the package .Measured on the body surface. Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 8 www.anpec.com.tw APM4953K Classification Reflow Profiles(Cont.) Table 1. SnPb Entectic Process – Package Peak Reflow Tem peratures 3 3 Package Thickness Volum e m m Volum e m m <350 ≥350 <2.5 m m 240 +0/-5°C 225 +0/-5°C ≥2.5 m m 225 +0/-5°C 225 +0/-5°C Table 2. Pb-free Process – Package Classification Reflow Tem peratures 3 3 3 Package Thickness Volum e mm Volum e mm Volum e mm <350 350-2000 >2000 <1.6 m m 260 +0°C* 260 +0°C* 260 +0°C* 1.6 m m – 2.5 m m 260 +0°C* 250 +0°C* 245 +0°C* ≥2.5 m m 250 +0°C* 245 +0°C* 245 +0°C* *Tolerance: The device m anufacturer/supplier shall assure process com patibility up to and including the stated classification tem perature (this m eans Peak reflow tem perature +0°C. For exam ple 260°C+0°C) at the rated MSL level. Reliability Test Program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245°C,5 SEC 1000 Hrs Bias @ 125°C 168 Hrs, 100% RH, 121°C -65°C ~ 150°C, 200 Cycles Carrier Tape & Reel Dimensions t E P Po D P1 Bo F W Ao Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 D1 9 Ko www.anpec.com.tw APM4953K Carrier Tape & Reel Dimensions(Cont.) T2 J C A B T1 Application A 330±1 SOP-8 F 5.5 ± 0.1 B 62 ± 1.5 C 12.75 + 0.1 5 J 2 + 0.5 D D1 Po 1.55±0.1 1.55+ 0.25 4.0 ± 0.1 T1 12.4 +0.2 T2 2± 0.2 W 12 + 0.3 - 0.1 P1 2.0 ± 0.1 Ao 6.4 ± 0.1 Bo 5.2± 0.1 Carrier Width 12 E 1.75± 0.1 Ko t 2.1± 0.1 0.3±0.013 (mm) Cover Tape Dimensions Application SOP- 8 P 8± 0.1 Cover Tape Width 9.3 Devices Per Reel 2500 Customer Service Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 10 www.anpec.com.tw