AP4511M Advanced Power Electronics Corp. N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D2 D1 D2 D1 D1 D1 ▼ Low On-resistance ▼ Fast Switching Performance N-CH BVDSS D2 D2 SO-8 SO-8 S2 G1 S2 S1 G1 S1 G2 G2 Description 35V RDS(ON) 25mΩ ID P-CH BVDSS RDS(ON) ID 7A -35V 40mΩ -6.1A The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness. D2 D1 The SO-8 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. G2 G1 S1 S2 Absolute Maximum Ratings Symbol Parameter Rating N-channel VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TA=25℃ ID@TA=70℃ Units P-channel 35 -35 V ±20 ±20 V Continuous Drain Current 3 7 -6.1 A Continuous Drain Current 3 5.7 -5 A 30 -30 A 1 IDM Pulsed Drain Current PD@TA=25℃ Total Power Dissipation 2.0 W Linear Derating Factor 0.016 W/℃ TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient Data and specifications subject to change without notice 3 Max. Value Unit 62.5 ℃/W 201122041 AP4511M N-CH Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. 35 - - V - 0.02 - V/℃ VGS=10V, ID=7A - 18 25 mΩ VGS=4.5V, ID=5A - 29 37 mΩ VDS=VGS, ID=250uA 1 - 3 V BVDSS Drain-Source Breakdown Voltage ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA RDS(ON) Static Drain-Source On-Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS 2 VDS=10V, ID=7A - 9 - S o VDS=35V, VGS=0V - - 1 uA o Drain-Source Leakage Current (Tj=70 C) VDS=28V, VGS=0V - - 25 uA Gate-Source Leakage VGS=±20V - - ±100 nA ID=7A - 11 18 nC Drain-Source Leakage Current (Tj=25 C) IGSS VGS=0V, ID=250uA Max. Units 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=28V - 3 - nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 6 - nC 2 td(on) Turn-on Delay Time VDS=18V - 12 - ns tr Rise Time ID=1A - 7 - ns td(off) Turn-off Delay Time RG=3.3Ω,VGS=10V - 22 - ns tf Fall Time RD=18Ω - 6 - ns Ciss Input Capacitance VGS=0V - 830 1330 pF Coss Output Capacitance VDS=25V - 150 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 110 - pF Rg Gate Resistance f=1.0MHz - 1.2 1.8 Ω Min. Typ. IS=1.7A, VGS=0V - - 1.2 V Source-Drain Diode Symbol VSD Parameter Forward On Voltage 2 2 Test Conditions Max. Units trr Reverse Recovery Time IS=7A, VGS=0V - 18 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 12 - nC AP4511M o P-CH Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. -35 - - V - -0.02 - V/℃ VGS=-10V, ID=-6A - 32 40 mΩ VGS=-4.5V, ID=-4A - 50 60 mΩ Gate Threshold Voltage VDS=VGS, ID=-250uA -1 - -3 V gfs Forward Transconductance VDS=-10V, ID=-6A - 9 - S IDSS Drain-Source Leakage Current (Tj=25oC) VDS=-35V, VGS=0V - - -1 uA Drain-Source Leakage Current (Tj=70oC) VDS=-28V, VGS=0V - - -25 uA Gate-Source Leakage VGS=±20V - - ±100 nA BVDSS Drain-Source Breakdown Voltage ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃,ID=-1mA RDS(ON) VGS(th) IGSS VGS=0V, ID=-250uA 2 Static Drain-Source On-Resistance 2 Max. Units Qg Total Gate Charge ID=-6A - 10 16 nC Qgs Gate-Source Charge VDS=-28V - 2 - nC Qgd Gate-Drain ("Miller") Charge VGS=-4.5V - 6 - nC VDS=-18V - 10 - ns 2 td(on) Turn-on Delay Time tr Rise Time ID=-1A - 6 - ns td(off) Turn-off Delay Time RG=3.3Ω,VGS=-10V - 26 - ns tf Fall Time RD=18Ω - 7 - ns Ciss Input Capacitance VGS=0V - 690 1100 pF Coss Output Capacitance VDS=-25V - 165 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 130 - pF Rg Gate Resistance f=1.0MHz - 5.2 7.8 Ω Min. Typ. IS=-1.7A, VGS=0V - - -1.2 V IS=-6A, VGS=0V - 20 - ns dI/dt=-100A/µs - 12 - nC Source-Drain Diode Symbol VSD Parameter Test Conditions 2 Forward On Voltage 2 trr Reverse Recovery Time Qrr Reverse Recovery Charge Max. Units Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 135 ℃/W when mounted on Min. copper pad. AP4511M N-Channel 50 50 T A = 25 o C 10V 7.0V 5.0V 40 10V 7.0V T A = 150 o C 40 ID , Drain Current (A) ID , Drain Current (A) 5.0V 30 20 V G =3.0V 10 30 20 V G =3.0V 10 0 0 0 1 2 3 4 5 0 1 V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 3 4 5 Fig 2. Typical Output Characteristics 1.8 40 ID=5A ID=7A V G =10V 1.6 T A =25 o C Normalized RDS(ON) 35 RDS(ON) (mΩ ) 2 V DS , Drain-to-Source Voltage (V) 30 1.4 1.2 1.0 25 0.8 0.6 20 2 4 6 8 -50 10 0 50 100 150 T j , Junction Temperature ( o C) V GS , Gate-to-Source Voltage (V) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.5 6 5 Normalized VGS(th) (V) 1.3 IS(A) 4 T j =150 o C T j =25 o C 3 2 1.1 0.9 0.7 1 0.5 0 0 0.2 0.4 0.6 0.8 1 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.2 -50 0 50 100 T j , Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 150 AP4511M N-Channel f=1.0MHz 1000 14 10 C oss 8 C (pF) VGS , Gate to Source Voltage (V) C iss I D =7A V DS =28V 12 6 C rss 100 4 2 0 10 0 5 10 15 20 25 1 5 9 Q G , Total Gate Charge (nC) 17 21 25 29 V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1 Normalized Thermal Response (Rthja) 100 10us 10 ID (A) 13 1ms 10ms 1 100ms o T A =25 C Single Pulse 0.1 Duty factor=0.5 02 01 0.1 0 05 0 02 0 01 PDM t 0.01 Si T Duty factor = t/T Peak T j = P DM x R thja + Ta Rthja =135o C/W 0.001 0.01 0.1 1 10 100 0.0001 0.001 V DS , Drain-to-Source Voltage (V) 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 30 VG ID , Drain Current (A) V DS =5V T j =25 o C T j =150 o C QG 20 4.5V QGS QGD 10 Charge 0 0 2 4 6 8 V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform Q AP4511M P-Channel 50 50 -10V 7 0V o T A = 25 C T A = 150 C 40 30 20 V 3 0V -ID , Drain Current (A) 40 -ID , Drain Current (A) -10V -7.0V o 30 20 V 10 10 3 0V 0 0 0 1 2 3 4 0 5 1 -V DS , Drain-to-Source Voltage (V) 2 3 4 5 -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1.4 60 I D = -4 A 55 I D =-6A V G =-10V o T A =25 C Normalized R DS(ON) 1.2 RDS(ON) (mΩ ) 50 45 40 1.0 0.8 35 0.6 30 -50 3 5 7 9 50 100 150 T j , Junction Temperature ( o C) -V GS ,Gate-to-Source Voltage (V) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.5 6 Normalized -VGS(th) (V) 5 4 -IS(A) 0 11 T j =150 o C 3 T j =25 o C 2 1.3 1.1 0.9 0.7 1 0.5 0 0 0.2 0.4 0.6 0.8 1 -V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.2 -50 0 50 100 T j , Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 150 AP4511M P-Channel f=1.0MHz 10000 14 I D = -6 A V DS = - 28V 10 C (pF) -VGS , Gate to Source Voltage (V) 12 8 C iss 1000 6 4 C oss 2 C rss 0 100 0 5 10 15 20 25 1 5 Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics 13 17 21 25 29 Fig 8. Typical Capacitance Characteristics 1 Normalized Thermal Response (Rthja) 100 100us 10 1ms -ID (A) 9 -V DS , Drain-to-Source Voltage (V) 10ms 1 100ms T =25 o C 1s 0.1 DC 0.1 P DM 0.01 t T Duty factor = t/T Peak Tj = P DM x Rthja + Ta Rthja=135oC/W 0.001 0.01 0.1 1 10 100 0.0001 0.001 0.01 -V DS , Drain-to-Source Voltage (V) 0.1 1 10 100 1000 t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 30 VG -ID , Drain Current (A) V DS =-5V T j =25 o C T j =150 o C QG 20 -4.5V QGS QGD 10 Charge 0 0 2 4 6 8 -V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform Q