AP2531GY
Pb Free Plating Product
Advanced Power
Electronics Corp.
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Low Gate Charge Drive
▼ Low On-resistance
N-CH BVDSS
D2
S1
RDS(ON)
D1
▼ Surface Mount Package
▼ RoHS Compliant
58mΩ
ID
G2
SOT-26
16V
S2
3.5A
P-CH BVDSS
G1
-16V
RDS(ON)
Description
125mΩ
ID
-2.5A
Advanced Power MOSFETs utilized advanced processing
techniques to achieve the lowest possible on-resistance, extremely
efficient and cost-effectiveness device.
The SOT-26 package is universally used for all commercial-industrial
applications.
D2
D1
G1
G2
S2
S1
Absolute Maximum Ratings
Symbol
Parameter
Rating
N-channel
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
Units
P-channel
16
-16
V
±8
±8
V
Continuous Drain Current
3
3.5
-2.5
A
ID@TA=70℃
Continuous Drain Current
3
2.8
-2
A
IDM
Pulsed Drain Current
10
-10
A
PD@TA=25℃
Total Power Dissipation
1.14
W
Linear Derating Factor
0.01
W/℃
ID@TA=25℃
1
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient
Data and specifications subject to change without notice
3
Max.
Value
Unit
110
℃/W
200701051-1/7
AP2531GY
o
N-CH Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
16
-
-
V
-
0.01
-
V/℃
VGS=4.5V, ID=3A
-
-
58
mΩ
VGS=2.5V, ID=2A
-
-
70
mΩ
VGS=1.8V, ID=1A
-
-
85
mΩ
0.2
-
1
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
RDS(ON)
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
2
VDS=VGS, ID=250uA
VDS=5V, ID=3A
-
9
-
S
o
VDS=16V, VGS=0V
-
-
1
uA
o
Drain-Source Leakage Current (Tj=70 C)
VDS=12V, VGS=0V
-
-
25
uA
Gate-Source Leakage
VGS=±8V
-
-
±100
nA
ID=3A
-
7
12
nC
Drain-Source Leakage Current (Tj=25 C)
IGSS
VGS=0V, ID=250uA
Max. Units
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=10V
-
0.6
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
2
-
nC
2
td(on)
Turn-on Delay Time
VDS=10V
-
6
-
ns
tr
Rise Time
ID=1A
-
11
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=5V
-
17
-
ns
tf
Fall Time
RD=10Ω
-
3
-
ns
Ciss
Input Capacitance
VGS=0V
-
360
580
pF
Coss
Output Capacitance
VDS=25V
-
50
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
40
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.4
2
Ω
Min.
Typ.
-
-
Source-Drain Diode
Symbol
VSD
Parameter
Forward On Voltage
2
Test Conditions
IS=0.9A, VGS=0V
Max. Units
1.3
V
2/7
AP2531GY
P-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
-16
-
-
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA
-
0.01
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance
VGS=-4.5V, ID=-2A
-
-
125
mΩ
VGS=-2.5V, ID=-1.6A
-
-
155
mΩ
VGS=-1.8V, ID=-1A
-
-
200
mΩ
-0.2
-
-1
V
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
IGSS
VGS=0V, ID=-250uA
VDS=VGS, ID=-250uA
VDS=-5V, ID=-2A
-
5
-
S
o
VDS=-16V, VGS=0V
-
-
-1
uA
o
Drain-Source Leakage Current (Tj=70 C)
VDS=-12V ,VGS=0V
-
-
-25
uA
Gate-Source Leakage
VGS=±8V
-
-
±100
nA
Drain-Source Leakage Current (Tj=25 C)
2
Qg
Total Gate Charge
ID=-2A
-
6
10
nC
Qgs
Gate-Source Charge
VDS=-10V
-
0.8
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
2
-
nC
VDS=-10V
-
7
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=-1A
-
20
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=-5V
-
23
-
ns
tf
Fall Time
RD=10Ω
-
24
-
ns
Ciss
Input Capacitance
VGS=0V
-
370
600
pF
Coss
Output Capacitance
VDS=-25V
-
70
-
pF
Crss
Rg
Reverse Transfer Capacitance
f=1.0MHz
-
60
-
pF
Gate Resistance
f=1.0MHz
-
8
12
Ω
Min.
Typ.
Max.
Unit
-
-
-1.3
V
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
Test Conditions
IS=-0.9A, VGS=0V
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board, t<5sec ; 180℃/W when mounted on min. copper pad.
3/7
AP2531GY
N-Channel
10
10
5.0 V
4.5 V
2.5 V
1.8 V
T A =25 C
ID , Drain Current (A)
8
6
4
V G = 1.0 V
2
6
4
V G = 1.0 V
2
0
0
0
1
2
3
4
0
1
V DS , Drain-to-Source Voltage (V)
2
3
4
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.8
320
I D =3A
V G =10V
ID=2A
Normalized RDS(ON)
T A =25 o C
220
RDS(ON) (mΩ )
5.0 V
4.5 V
2.5 V
1.8 V
T A = 150 o C
8
ID , Drain Current (A)
o
120
1.4
1.0
0.6
20
0
2
4
6
-50
8
0
V GS , Gate-to-Source Voltage (V)
50
100
150
T j , Junction Temperature ( o C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.0
Normalized VGS(th) (V)
3
IS(A)
2
T j =150 o C
T j =25 o C
1
1.5
1.0
0.5
0.0
0
0
0.2
0.4
0.6
0.8
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
4/7
AP2531GY
N-Channel
f=1.0MHz
VGS , Gate to Source Voltage (V)
12
1000
ID=3A
V DS = 10 V
C iss
C (pF)
9
6
100
C oss
C rss
3
10
0
0
5
10
1
15
5
9
Fig 7. Gate Charge Characteristics
17
21
25
29
Fig 8. Typical Capacitance Characteristics
100
Normalized Thermal Response (Rthja)
1
10
100us
1ms
ID (A)
13
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
1
10ms
0.1
100ms
1s
DC
T A =25 o C
Single Pulse
Duty factor=0.5
0.2
0.1
0.1
PDM
t
T
0.05
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja = 180℃/W
0.02
0.01
Single Pulse
0.01
0.01
0.1
1
10
100
0.0001
0.001
0.01
V DS , Drain-to-Source Voltage (V)
0.1
1
10
100
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
10
VG
V DS =5V
ID , Drain Current (A)
8
T j =25 o C
QG
T j =150 o C
4.5V
6
QGS
QGD
4
2
Charge
Q
0
0
1
2
3
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
5/7
AP2531GY
P-Channel
10
10
-5.0 V
- 4.5 V
- 2.5 V
-ID , Drain Current (A)
8
o
T A = 150 C
6
-1.8 V
4
2
- 5.0 V
- 4.5 V
- 2.5 V
8
-ID , Drain Current (A)
o
T A = 25 C
6
- 1.8 V
4
2
V G = - 1.0 V
0
V G = - 1.0 V
0
0
2
4
6
0
2
-V DS , Drain-to-Source Voltage (V)
4
6
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.8
550
I D = -1 .6 A
I D = -2 A
V G = -10 V
T A =25 o C
Normalized RDS(ON)
RDS(ON) (mΩ)
450
350
250
1.4
1.0
150
0.6
50
0
2
4
6
-50
8
-V GS , Gate-to-Source Voltage (V)
100
150
T j , Junction Temperature ( C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.0
2.0
1.5
1.5
Normalized -VGS(th) (V)
-IS(A)
50
o
Fig 3. On-Resistance v.s. Gate Voltage
1.0
T j =150 o C
0
T j =25 o C
0.5
1.0
0.5
0.0
0.0
0
0.2
0.4
0.6
0.8
1
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
6/7
AP2531GY
P-Channel
f=1.0MHz
1000
I D =-2A
V DS =-10V
C iss
9
C (pF)
-VGS , Gate to Source Voltage (V)
12
6
100
C oss
C rss
3
10
0
0
3
6
9
1
12
5
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
13
17
21
25
29
Fig 8. Typical Capacitance Characteristics
1
Normalized Thermal Response (Rthja)
100
10
100us
-ID (A)
9
-V DS , Drain-to-Source Voltage (V)
1ms
1
10ms
0.1
100ms
o
T A =25 C
Single Pulse
1s
DC
Duty factor=0.5
0.2
0.1
0.1
PDM
t
T
0.05
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
0.01
Rthja = 180℃/W
0.2
Single Pulse
0.01
0.01
0.1
1
10
100
0.0001
0.001
0.01
-V DS , Drain-to-Source Voltage (V)
0.1
1
10
100
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
10
VG
V DS =-5V
-ID , Drain Current (A)
8
T j =25 o C
6
QG
T j =150 o C
-4.5V
QGS
QGD
4
2
Charge
Q
0
0
1
2
3
4
-V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
7/7