AP9926TGO
Pb Free Plating Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low on-resistance
G2
S2
D2
▼ Capable of 2.5V gate drive
G1
▼ Surface mount package
BVDSS
20V
RDS(ON)
32mΩ
S2
ID
S1
TSSOP-8
D1
S1
4.7A
Description
D2
D1
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
G2
G1
S1
S2
Absolute Maximum Ratings
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
Rating
Units
20
V
±12
V
Continuous Drain Current
3
4.7
A
Continuous Drain Current
3
3.8
A
20
A
1
IDM
Pulsed Drain Current
PD@TA=25℃
Total Power Dissipation
1
W
Linear Derating Factor
0.008
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient
Data and specifications subject to change without notice
3
Max.
Value
Unit
125
℃/W
200315051
AP9926TGO
o
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Typ.
Max. Units
20
-
-
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
-
0.03
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance 2
VGS=4.5V, ID=4A
-
-
32
mΩ
VGS=2.5V, ID=2A
-
-
45
mΩ
0.5
-
1.2
V
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
VDS=VGS, ID=250uA
VDS=5V, ID=6A
-
12
-
S
o
VDS=20V, VGS=0V
-
-
1
uA
o
Drain-Source Leakage Current (Tj=70 C)
VDS=16V ,VGS=0V
-
-
25
uA
Gate-Source Leakage
VGS=±12V
-
-
±100
nA
ID=6A
-
9
15
nC
Drain-Source Leakage Current (Tj=25 C)
IGSS
VGS=0V, ID=250uA
Min.
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=16V
-
2
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
4
-
nC
2
td(on)
Turn-on Delay Time
VDS=10V
-
8
-
ns
tr
Rise Time
ID=1A
-
10
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=5V
-
16
-
ns
tf
Fall Time
RD=10Ω
-
7
-
ns
Ciss
Input Capacitance
VGS=0V
-
550
880
pF
Coss
Output Capacitance
VDS=20V
-
120
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
94
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.2
1.9
Ω
Min.
Typ.
IS=1.7A, VGS=0V
-
-
1.2
V
Source-Drain Diode
Symbol
VSD
Parameter
Forward On Voltage
2
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=6A, VGS=0V,
-
15
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
8
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
2
3.Surface mounted on 1 in copper pad of FR4 board ; 208℃/W when mounted on Min. copper pad.
AP9926TGO
30
30
5.0V
4.5V
3.5V
TA=25 C
ID , Drain Current (A)
25
2.5V
20
5.0V
4.5V
3.5V
T A =150 o C
25
ID , Drain Current (A)
o
15
10
5
20
2.5V
15
10
V G =1.5V
5
V G =1.5V
0
0
0
1
2
3
0
1
Fig 1. Typical Output Characteristics
3
Fig 2. Typical Output Characteristics
50
1.6
ID=2A
o
ID=4A
V G =4.5V
1.4
Normalized R DS(ON)
T A =25 C
40
RDS(ON) (mΩ )
2
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
30
1.2
1.0
0.8
0.6
20
0
2
4
6
8
10
-50
0
50
100
150
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
Normalized VGS(th) (V)
6
IS(A)
4
o
T j =150 C
T j =25 o C
2
0
1.2
0.8
0.4
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
150
AP9926TGO
f=1.0MHz
1000
15
C iss
V DS =10V
V DS =12V
V DS =16V
9
C (pF)
VGS , Gate to Source Voltage (V)
I D =6A
12
C oss
100
C rss
6
3
10
0
0
5
10
15
1
20
5
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Normalized Thermal Response (Rthja)
10
100us
1ms
ID (A)
13
17
21
25
29
Fig 8. Typical Capacitance Characteristics
100
10ms
1
100ms
0.1
9
V DS , Drain-to-Source Voltage (V)
1s
o
T A =25 C
Single Pulse
1
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
PDM
0.01
t
Single Pulse
T
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
DC
Rthja=208oC/W
0.001
0.01
0.1
1
10
100
0.0001
0.001
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Fig 12. Gate Charge Waveform
Q