AP9973M
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low Gate Charge
D2
▼ Single Drive Requirement
▼ Surface Mount Package
D1
D2
D1
BVDSS
60V
RDS(ON)
80mΩ
ID
3.9A
G2
S2
SO-8
S1
G1
Description
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, lower on-resistance and
cost-effectiveness.
D2
D1
G2
G1
S1
S2
Absolute Maximum Ratings
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=100℃
Rating
Units
60
V
±20
V
3
3.9
A
3
2.5
A
Continuous Drain Current , VGS @ 10V
Continuous Drain Current , VGS @ 10V
1,2
IDM
Pulsed Drain Current
20
A
PD@TA=25℃
Total Power Dissipation
2
W
Linear Derating Factor
0.016
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient
Data and specifications subject to change without notice
3
Max.
Value
Unit
62.5
℃/W
201029031
AP9973M
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
60
-
-
V
-
0.06
-
V/℃
VGS=10V, ID=3.9A
-
-
80
mΩ
VGS=4.5V, ID=2A
-
-
100
mΩ
VDS=VGS, ID=250uA
1
-
3
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
RDS(ON)
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
2
VDS=10V, ID=3.9A
-
3.5
-
S
o
VDS=60V, VGS=0V
-
-
1
uA
o
Drain-Source Leakage Current (Tj=70 C)
VDS=48V ,VGS=0V
-
-
25
uA
Gate-Source Leakage
VGS= ± 20V
-
-
±100
nA
ID=3.9A
-
8
13
nC
Drain-Source Leakage Current (Tj=25 C)
IGSS
VGS=0V, ID=250uA
Max. Units
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=48V
-
2
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
4
-
nC
VDS=30V
-
8
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=1A
-
4
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
20
-
ns
tf
Fall Time
RD=30Ω
-
6
-
ns
Ciss
Input Capacitance
VGS=0V
-
700
1120
pF
Coss
Output Capacitance
VDS=25V
-
80
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
50
-
pF
Min.
Typ.
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
IS=3.9A, VGS=0V
-
-
1.2
V
trr
Reverse Recovery Time
IS=3.9A, VGS=0V,
-
28
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
35
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board ; 135℃/W when mounted on min. copper pad.
AP9973M
40
30
30
25
20
15
10
20
15
10
V G =3.0V
5
V G =3.0V
5
0
0
0
1
2
3
4
5
6
7
8
0
1
V DS , Drain-to-Source Voltage (V)
3
4
5
6
7
8
Fig 2. Typical Output Characteristics
95
2.5
I D =3.9A
I D =3.9A
o
T A =25 C
V G =10V
2.0
Normalized RDS(ON)
90
85
RDS(ON) (mΩ )
2
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
80
75
1.5
1.0
0.5
70
0.0
3
5
7
9
11
-50
Fig 3. On-Resistance v.s. Gate Voltage
3
2
VGS(th) (V)
2.5
o
T j =150 C
50
100
150
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
4
2
0
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
IS(A)
10V
6.0V
5.0V
4.5V
T A =150 o C
25
ID , Drain Current (A)
ID , Drain Current (A)
10V
6.0V
5.0V
4.5V
T A =25 o C
35
T j =25 o C
1
1.5
1
0
0.5
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
T j ,Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
150
AP9973M
14
f=1.0MHz
10000
I D =3.9A
V DS =48V
V DS =38V
V DS =30V
10
1000
Ciss
8
C (pF)
VGS , Gate to Source Voltage (V)
12
6
100
Coss
4
Crss
2
10
0
0
5
10
15
20
25
30
35
1
40
5
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
13
17
21
25
29
Fig 8. Typical Capacitance Characteristics
1
Normalized Thermal Response (R thja)
100
10
ID (A)
9
V DS , Drain-to-Source Voltage (V)
1ms
1
10ms
100ms
1s
0.1
o
T A =25 C
Single Pulse
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
0.02
t
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
0.01
Single Pulse
Rthja=135℃
℃ /W
DC
0.01
0.001
0.1
1
10
100
1000
0.0001
0.001
0.01
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Fig 12. Gate Charge Waveform
Q