Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR General Description Features The AP2126 is a 300mA, positive Voltage regulator ICs fabricated by CMOS process. · · · Each of AP2126 is equipped with a voltage reference, an error amplifier, a resistor network for setting output voltage, a chip enable circuit, a current limit circuit and OSTD (over temperature shut down) circuit to prevent the IC from over current and over temperature. · · · · · · The AP2126 has features of high ripple rejection, low dropout voltage, low noise, high output voltage accuracy, and low current consumption which make it ideal for use in various battery-powered apparatus. · · · AP2126 has 3.3V fixed voltage version. It is available in SOT-23-5 Package. AP2126 Low Dropout Voltage: 170mV@300mA High Output Voltage Accuracy: ±2% High Ripple Rejection: 65dB@ f=1kHz, 45dB@ f=10kHz Low Standby Current: 0.1µA Low Quiescent Current: 60µA Typical Low Output Noise: 60µVrms Short Current Limit: 50mA Over Temperature Protection Compatible with Low ESR Ceramic Capacitor: 1µF for CIN and COUT Excellent Line/Load Regulation Soft Start Time: 50µs Auto Discharge Resistance: RDS(ON)=60Ω Applications · · · Datacom Notebook Computers Mother Board SOT-23-5 Figure 1. Package Type of AP2126 Jun. 2008 Rev. 1.1 BCD Semiconductor Manufacturing Limited 1 Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2126 Pin Configuration K Package (SOT-23-5) Shutdown 1 GND 2 VIN 3 5 NC 4 VOUT Figure 2. Pin Configuration of AP2126 (Top View) Functional Block Diagram UVLO & Shutdown Logic SHUTDOWN VIN Foldback Current Limit Thermal Shutdown VOUT 3MΩ NC VREF GND Figure 3. Functional Block Diagram of AP2126 Jun. 2008 Rev. 1.1 BCD Semiconductor Manufacturing Limited 2 Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2126 Ordering Information AP2126 G1: Green Circuit Type TR: Tape and Reel Package 3.3: Fixed Output 3.3V K: SOT-23-5 Product Package Temperature Range AP2126 SOT-23-5 -40 to 85oC Part Number Marking ID Green AP2126K-3.3TRG1 Green FEF Packing Type Tape & Reel BCD Semiconductor's products, as designated with "G1" suffix in the part number, are RoHS compliant and Green. Jun. 2008 Rev. 1. 1 BCD Semiconductor Manufacturing Limited 3 Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2126 Absolute Maximum Ratings (Note 1) Parameter Symbol Value Unit Input Voltage VIN 6.5 V Shutdown Input Voltage VCE -0.3 to VIN+0.3 V Output Current IOUT 450 mA TJ 150 oC TSTG -65 to 150 oC TLEAD 260 Thermal Resistance RθJA 250 oC/W ESD (Human Body Model) ESD 6000 V ESD (Machine Model) ESD 300 V Junction Temperature Storage Temperature Range Lead Temperature (Soldering, 10sec) o C Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods may affect device reliability. Recommended Operating Conditions Parameter Symbol Min Max Unit Input Voltage VIN - 6 V TJ -40 85 oC Operating Junction Temperature Range Jun. 2008 Rev. 1.1 BCD Semiconductor Manufacturing Limited 4 Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2126 Electrical Characteristics (Continued) (AP2126-3.3V, CIN=1µF, COUT=1µF, Bold typeface applies over -40oC≤TJ≤85oC, unless otherwise specified.) Parameter Output Voltage Input Voltage Maximum Output Current Symbol VOUT Conditions Min VIN=VOUT+1V 1mA≤IOUT≤300mA Typ 98%* VOUT VIN IOUT(MAX) Max Unit 102%* VOUT V 6 V 450 mA Load Regulation ∆VOUT /(∆IOUT*VOUT) VIN-VOUT=1V, 1mA≤IOUT≤300mA 0.6 %/A Line Regulation ∆VOUT /(∆VIN*VOUT) VOUT+0.5V≤VIN≤6V IOUT=30mA 0.06 %/V Dropout Voltage VDROP VOUT=3.3V, IOUT=300mA 170 300 mV IQ VIN=VOUT+1V, IOUT=0mA 60 90 µA VIN=VOUT+1V, VSHUTDOWN in off mode 0.1 1.0 µA Quiescent Current Standby Current Power Supply Rejection Ratio Output Voltage Temperature Coefficient ISTD PSRR (∆VOUT/VOUT) /∆T Ripple 1Vp-p VIN=VOUT+1V f=100Hz 65 dB f=1KHz 65 dB f=10KHz 45 dB ±100 ppm/oC IOUT=30mA, -40oC≤TJ≤85oC Output Current Limit ILIMIT VIN-VOUT=1V, VOUT=0.98*VOUT 400 mA Short Current Limit ISHORT VOUT=0V 50 mA 50 µs 60 µVrms Soft Start Time RMS Output Noise tUP VNOISE TA=25oC, 10Hz ≤f≤100kHz Shutdown "High" Voltage Shutdown input voltage "High" 1.5 6 V Shutdown "Low" Voltage Shutdown input voltage "Low" 0 0.4 V VOUT Discharge MOSFET RDS(ON) Shutdown input voltage "Low" 60 Ω 3 MΩ Thermal Shutdown 165 oC Thermal Shutdown Hysteresis 30 Shutdown Pull Down Resistance Jun. 2008 Rev. 1. 1 o C BCD Semiconductor Manufacturing Limited 5 Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2126 Typical Performance Characteristics 240 3.5 3.0 T C=-40 C 200 T C=25 C o o Dropout Voltage (mV) 180 2.5 Output Voltage (V) 220 2.0 1.5 o TC=-40 C o TC=25 C 1.0 140 120 100 80 60 40 o TC=85 C 20 VIN=4.3V 0.5 o T C=125 C 160 0 50 0.0 0.1 0.2 0.3 0.4 100 Figure 4. Output Voltage vs. Output Current 250 300 Figure 5. Dropout Voltage vs. Output Current, VOUT=3.3V 70 120 115 IOUT=0 68 o 110 TC=-40 C 105 TC=25 C 100 TC=85 C 95 VIN=4.3V, VOUT=3.3V o VIN=4.3V, VOUT=3.3V 66 o Quiescent Current (µA) Quiescent Current (µA) 200 Output Current (mA) Output Current (A) 90 85 80 75 70 65 60 64 62 60 58 56 54 52 55 50 150 0.5 0 50 100 150 200 250 50 -40 300 -20 0 20 40 60 80 100 120 o Case Temperature ( C) Output Current (mA) Figure 7. Quiescent Current vs. Case Temperature Figure 6. Quiescent Current vs. Output Current Jun. 2008 Rev. 1.1 BCD Semiconductor Manufacturing Limited 6 Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2126 Typical Performance Characteristics (Continued) 80 3.295 IOUT=10mA 3.294 70 CIN=COUT=1µF, VIN=4.3V 3.293 3.292 Output Voltage (V) Quiescent Current (µA) 60 50 40 30 o TC=-40 C o 20 TC=25 C 3.291 3.290 3.289 3.288 3.287 3.286 o TC=85 C 10 0 IOUT=0 0 1 2 3 4 3.285 5 3.284 -40 6 -20 0 20 Input Voltage (V) 120 3.0 38 Output Voltage (V) 36 Short Current (mA) 100 3.5 40 34 32 30 28 26 24 22 20 2.5 2.0 1.5 1.0 IOUT=0 IOUT=300mA 0.5 18 16 -40 80 Figure 9. Output Voltage vs. Case Temperature CIN=COUT=1µF, VIN=4.3V 42 60 o Figure 8. Quiescent Current vs. Input Voltage 44 40 Case Temperature ( C) -20 0 20 40 60 80 100 0.0 120 o TC=25 C 0 1 2 3 4 5 6 Input Voltage (V) o Case Temperature ( C) Figure 10. Short Current vs. Case Temperature Figure 11. Output Voltage vs. Input Voltage Jun. 2008 Rev. 1. 1 BCD Semiconductor Manufacturing Limited 7 Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2126 Typical Performance Characteristics (Continued) 2.0 VOUT=3.3V 1.8 No heatsink Power Dissipation (W) 1.6 IOUT 1.4 1.2 1.0 0.8 VOUT 0.6 0.4 0.2 0.0 -40 -20 0 20 40 60 80 100 120 o Case Temperature( C) Figure 13. Load Transient Figure 12. Power Dissipation vs. Case Temperature (Conditions: CIN=COUT=1µF, VIN=4.4V, VOUT=3.3V) VIN VOUT VShutdown VOUT Figure 14. Line Transient Figure 15. Soft Start Time (Conditions: IOUT=30mA, CIN=COUT=1µF, (Conditions: IOUT=0mA, CIN=COUT=1µF, VIN=4 to 5V, VOUT=3.3V) VShutdown=0 to 2V, VOUT=3.3V) Jun. 2008 Rev. 1.1 BCD Semiconductor Manufacturing Limited 8 Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2126 Typical Performance Characteristics (Continued) 100 IOUT=10mA 90 IOUT=300mA 80 ripple=1Vpp, COUT=1µF, VOUT=3.3V PSRR (dB) 70 60 50 40 30 20 10 0 100 1000 10000 100000 Frequency (Hz) Figure 16. PSRR vs. Frequency Jun. 2008 Rev. 1. 1 BCD Semiconductor Manufacturing Limited 9 Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2126 Typical Application VIN VOUT VIN VOUT AP2126 Shutdown CIN 1µF COUT 1µF GND VOUT=3.3V Figure 17. Typical Application of AP2126 Jun. 2008 Rev. 1.1 BCD Semiconductor Manufacturing Limited 10 Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2126 Mechanical Dimensions SOT-23-5 Unit: mm(inch) 0.300(0.012) 0.600(0.024) 1.500(0.059) 1.700(0.067) 0.100(0.004) 0.200(0.008) 2.950(0.116) 2.650(0.104) 2.820(0.111) 3.020(0.119) 0.200(0.008) 0.700(0.028) REF 0.300(0.012) 0.400(0.016) 0° 8° 1.800(0.071) 2.000(0.079) 1.250(0.049) 1.050(0.041) 0.950(0.037) TYP 0.000(0.000) 0.100(0.004) 1.050(0.041) 1.150(0.045) Jun. 2008 Rev. 1. 1 BCD Semiconductor Manufacturing Limited 11 BCD Semiconductor Manufacturing Limited http://www.bcdsemi.com IMPORTANT NOTICE IMPORTANT NOTICE BCD Semiconductor BCD Semiconductor Manufacturing Manufacturing Limited Limited reserves reserves the the right right to to make make changes changes without without further further notice notice to to any any products products or or specifispecifications herein. cations herein. BCD BCD Semiconductor Semiconductor Manufacturing Manufacturing Limited Limited does does not not assume assume any any responsibility responsibility for for use use of of any any its its products products for for any any particular purpose, particular purpose, nor nor does does BCD BCD Semiconductor Semiconductor Manufacturing Manufacturing Limited Limited assume assume any any liability liability arising arising out out of of the the application application or or use use of any of any its its products products or or circuits. circuits. BCD BCD Semiconductor Semiconductor Manufacturing Manufacturing Limited Limited does does not not convey convey any any license license under under its its patent patent rights rights or or other rights other rights nor nor the the rights rights of of others. others. MAIN SITE SITE MAIN - Headquarters BCD Semiconductor Manufacturing Limited BCD Semiconductor Manufacturing Limited - Wafer Fab No. 1600, Zi Xing Road, Shanghai ZiZhu Science-basedLimited Industrial Park, 200241, China Shanghai SIM-BCD Semiconductor Manufacturing Tel: Fax: +86-21-24162277 800,+86-21-24162266, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6485 1491, Fax: +86-21-5450 0008 REGIONAL SALES OFFICE Shenzhen OfficeSALES OFFICE REGIONAL - Wafer FabSemiconductor Manufacturing Limited BCD Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd. - IC Design Group 800 Yi Shan Road, Shanghai 200233, China Corporation Advanced Analog Circuits (Shanghai) Tel: +86-21-6485 1491,YiFax: 0008200233, China 8F, Zone B, 900, Shan+86-21-5450 Road, Shanghai Tel: +86-21-6495 9539, Fax: +86-21-6485 9673 Taiwan Office Shanghai Semiconductor Manufacturing Co., Ltd., Shenzhen Office BCD Taiwan Semiconductor Shenzhen SIM-BCD Office Office (Taiwan) Company Limited Room E, 5F, Noble Center, No.1006,Manufacturing 3rd Fuzhong Road, Futian District,Office Shenzhen, 4F, 298-1, Guang Road,(Taiwan) Nei-Hu District, Taipei, Shanghai SIM-BCD Semiconductor Co., Ltd. Shenzhen BCDRui Semiconductor Company Limited 518026, China Taiwan Advanced Analog Circuits (Shanghai) Corporation Shenzhen Office 4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei, Tel: +86-755-8826 Tel: +886-2-2656 2808 Room E, 5F, Noble 7951 Center, No.1006, 3rd Fuzhong Road, Futian District, Shenzhen 518026, China Taiwan Fax: +86-755-88267951 7865 Fax: +886-2-2656 28062808 Tel: +86-755-8826 Tel: +886-2-2656 Fax: +86-755-8826 7865 Fax: +886-2-2656 2806 USA Office BCD Office Semiconductor Corp. USA 30920Semiconductor Huntwood Ave.Corporation Hayward, BCD CA 94544, USA Ave. Hayward, 30920 Huntwood Tel :94544, +1-510-324-2988 CA U.S.A Fax:: +1-510-324-2988 +1-510-324-2788 Tel Fax: +1-510-324-2788