Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2128 General Description Features The AP2128 series are positive voltage regulator ICs fabricated by CMOS process. The AP2128 provides two kinds of output voltage operation modes for setting the output voltage. Fixed output voltage mode senses the output voltage on VOUT, adjustable output voltage mode needs two resistors as a voltage divider. · · Wide Operating Voltage: 2.5V to 6V Low Dropout Voltage:170mV@300mA for VOUT=3.3V, 140mV@300mA for VOUT=5.2V · · High Output Voltage Accuracy: ±2% High Ripple Rejection: 68dB@ f=1kHz, 54dB@ f=10kHz Low Standby Current: 0.1µA Low Quiescent Current: 60µA Typical Low Output Noise: 60µVrms@VOUT=0.8V · · · The AP2128 series have features of low dropout voltage, low noise, high output voltage accuracy, and low current consumption which make them ideal for use in various battery-powered devices. AP2128 have 1.0V, 1.2V, 1.5V, 1.8V, 2.5V, 2.8V, 3.0V, 3.3V, 3.9V, 4.2V, 4.75V, 5.2V fixed voltage versions and 0.8V to 5.5V adjustable voltage version. AP2128 series are available in SOT-23-5 package. · · · Short Current Limit: 50mA Over Temperature Protection Compatible with Low ESR Ceramic Capacitor: 1µF for CIN and COUT · · · Excellent Line/Load Regulation Soft Start Time: 50µs Auto Discharge Resistance: RDS(ON)=60Ω Applications · · · Datacom Notebook Computers Mother Board SOT-23-5 Figure 1. Package Type of AP2128 Sept. 2010 Rev. 2.0 BCD Semiconductor Manufacturing Limited 1 Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2128 Pin Configuration K Package (SOT-23-5) Shutdown 1 GND 2 VIN 3 5 ADJ/NC 4 VOUT Figure 2. Pin Configuration of AP2128 (Top View) Functional Block Diagram SHUTDOWN 1 Shutdown and Logic Control 3 VIN VREF MOS Driver 4 Current Limint And Thermal Protection 2 VOUT GND Fixed Version Sept. 2010 Rev. 2.0 BCD Semiconductor Manufacturing Limited 2 Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2128 Functional Block Diagram (Continued) SHUTDOWN 1 Shutdown and Logic Control 3 VIN VREF MOS Driver 4 Current Limint And Thermal Protection 5 2 VOUT ADJ GND Adjustable Version Figure 3. Functional Block Diagram of AP2128 Sept. 2010 Rev. 2.0 BCD Semiconductor Manufacturing Limited 3 Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2128 Ordering Information AP2128 G1: Green Circuit Type TR: Tape and Reel Package ADJ: ADJ Output 1.0: Fixed Output 1.0V 1.2: Fixed Output 1.2V 1.5: Fixed Output 1.5V 1.8: Fixed Output 1.8V 2.5: Fixed Output 2.5V 2.8: Fixed Output 2.8V 3.0: Fixed Output 3.0V 3.3: Fixed Output 3.3V 3.9: Fixed Output 3.9V 4.2: Fixed Output 4.2V 4.75: Fixed Output 4.75V 5.2: Fixed Output 5.2V K: SOT-23-5 Product AP2128 Package SOT-23-5 Temperature Range o -40 to 85 C Part Number Marking ID Packing Type AP2128K- ADJTRG1 FAD Tape & Reel AP2128K-1.0TRG1 FAJ Tape & Reel AP2128K-1.2TRG1 FAK Tape & Reel AP2128K-1.5TRG1 GAN Tape & Reel AP2128K-1.8TRG1 GAP Tape & Reel AP2128K-2.5TRG1 GAQ Tape & Reel AP2128K-2.8TRG1 GAR Tape & Reel AP2128K-3.0TRG1 GAW Tape & Reel AP2128K-3.3TRG1 FAL Tape & Reel AP2128K-3.9TRG1 GBU Tape & Reel AP2128K-4.2TRG1 GAZ Tape & Reel AP2128K-4.75TRG1 GFZ Tape & Reel AP2128K-5.2TRG1 GAV Tape & Reel BCD Semiconductor's products, as designated with "G1" suffix in the part number, are RoHS compliant and Green. Sept. 2010 Rev. 2.0 BCD Semiconductor Manufacturing Limited 4 Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2128 Absolute Maximum Ratings (Note 1) Parameter Symbol Value Unit Input Voltage VIN 6.5 V Shutdown Input Voltage VCE -0.3 to VIN+0.3 V Output Current IOUT 450 mA TJ 150 oC TSTG -65 to 150 oC TLEAD 260 Thermal Resistance θJA 250 oC/W ESD (Human Body Model) ESD 6000 V ESD (Machine Model) ESD 200 V Junction Temperature Storage Temperature Range Lead Temperature (Soldering, 10sec) o C Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods may affect device reliability. Recommended Operating Conditions Parameter Symbol Min Max Unit Input Voltage VIN 2.5 6 V Operating Ambient Temperature Range TA -40 85 oC Sept. 2010 Rev. 2.0 BCD Semiconductor Manufacturing Limited 5 Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2128 Electrical Characteristics (AP2128-ADJ, VIN min=2.5V, CIN=1µF, COUT=1µF, Bold typeface applies over -40oC≤TA≤85oC, unless otherwise specified.) Parameter Reference Voltage Input Voltage Maximum Output Current Current Limit Symbol VREF Conditions VIN=2.5V 1mA≤IOUT≤300mA VIN IOUT(MAX) ILIMIT Min Typ Max Unit 0.784 0.8 0.816 V 6 V 2.5 VIN=2.5V, VOUT=98%×VOUT 300 VIN=2.5V 400 mA 450 mA Load Regulation ∆VOUT /(∆IOUT*VOUT) VIN=2.5V, 1mA≤IOUT≤300mA 0.6 %/A Line Regulation ∆VOUT /(∆VIN*VOUT) VIN=2.5V to 6V IOUT=30mA 0.06 %/V Quiescent Current Standby Current Power Supply Rejection Ratio Output Voltage Temperature Coefficient Short Current Limit Soft Start Time RMS Output Noise IQ ISTD PSRR (∆VOUT/VOUT) /∆T ISHORT VIN=2.5V, IOUT=0mA 60 90 µA VIN=2.5V, VSHUTDOWN in off mode 0.1 1.0 µA Ripple 1Vp-p VIN=3V f=100Hz 68 dB f=1KHz 68 dB f=10KHz 54 dB ±100 ppm/oC 50 mA 50 µs 60 µVrms IOUT=30mA, -40oC≤TA≤85oC VOUT=0V tUP VNOISE o TA=25 C, 10Hz ≤f≤100kHz, VOUT=0.8V Shutdown "High" Voltage Shutdown input voltage "High" 1.5 6 V Shutdown "Low" Voltage Shutdown input voltage "Low" 0 0.4 V VOUT Discharge MOSFET RDS(ON) Shutdown input voltage "Low" 60 Ω 3 MΩ Thermal Shutdown 165 oC Thermal Shutdown Hysteresis 30 oC 150 oC/W Shutdown Pull Down Resistance Thermal Resistance θJC SOT-23-5 Sept. 2010 Rev. 2.0 BCD Semiconductor Manufacturing Limited 6 Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2128 Electrical Characteristics (Continued) (AP2128-1.0V/1.2V/1.5V/1.8V, VINmin.=2.5V, CIN=1µF, COUT=1µF, Bold typeface applies over -40oC≤TA≤85oC, unless otherwise specified.) Parameter Output Voltage Input Voltage Maximum Output Current Current Limit Symbol VOUT Conditions Min VIN=2.5V 1mA≤IOUT≤300mA VIN IOUT(MAX) ILIMIT VIN=2.5V, VOUT=98%×VOUT Max Unit 98%× VOUT 102%× VOUT V 2.5 6 V 300 VIN=2.5V Typ 400 mA 450 mA Load Regulation ∆VOUT /(∆IOUT*VOUT) VIN=2.5V, 1mA≤IOUT≤300mA 0.6 %/A Line Regulation ∆VOUT /(∆VIN*VOUT) VIN=2.5V to 6V IOUT=30mA 0.06 %/V Dropout Voltage Quiescent Current Standby Current Power Supply Rejection Ratio Output Voltage Temperature Coefficient Short Current Limit Soft Start Time VDROP IQ ISTD PSRR (∆VOUT/VOUT) /∆T ISHORT VOUT=1.0V, IOUT=300mA 1400 1500 VOUT=1.2V, IOUT=300mA 1200 1300 VOUT=1.5V, IOUT=300mA 900 1000 VOUT=1.8V, IOUT=300mA 600 700 VIN=2.5V, IOUT=0mA 60 90 µA VIN=2.5V, VSHUTDOWN in off mode 0.1 1.0 µA Ripple 1Vp-p VIN=3V mV f=100Hz 68 dB f=1KHz 68 dB f=10KHz 54 dB ±100 ppm/oC 50 mA 50 µs IOUT=30mA, -40oC≤TA≤85oC VOUT=0V tUP Shutdown "High" Voltage Shutdown input voltage "High" 1.5 6 V Shutdown "Low" Voltage Shutdown input voltage "Low" 0 0.4 V VOUT Discharge MOSFET RDS(ON) Shutdown input voltage "Low" 60 Ω 3 MΩ Thermal Shutdown 165 oC Thermal Shutdown Hysteresis 30 oC 150 oC/W Shutdown Pull Down Resistance Thermal Resistance θJC SOT-23-5 Sept. 2010 Rev. 2.0 BCD Semiconductor Manufacturing Limited 7 Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2128 Electrical Characteristics (Continued) (AP2128-2.5V/2.8V/3.0V/3.3V/3.9V/4.2V/4.75V, VIN=VOUT+1V; AP2128-5.2V, VIN=6V, CIN=1µF, COUT=1µF, Bold typeface applies over -40oC≤TA≤85oC, unless otherwise specified.) Parameter Output Voltage Input Voltage Maximum Output Current Current Limit Symbol VOUT Conditions Min VIN=VOUT+1V 1mA≤IOUT≤300mA VIN IOUT(MAX) ILIMIT VIN-VOUT=1V, VOUT=98%×VOUT Max Unit 98%× VOUT 102%× VOUT V 2.5 6 V 300 VIN-VOUT=1V Typ 400 mA 450 mA Load Regulation ∆VOUT /(∆IOUT*VOUT) VIN-VOUT=1V, 1mA≤IOUT≤300mA 0.6 %/A Line Regulation ∆VOUT /(∆VIN*VOUT) VOUT+0.5V≤VIN≤6V, IOUT=30mA 0.06 %/V Dropout Voltage Quiescent Current Standby Current Power Supply Rejection Ratio VDROP IQ ISTD PSRR VOUT=2.5V, 2.8V, 3.0V, 3.3V, 3.9V, 4.2V, IOUT=300mA 170 VOUT=4.75V and 5.2V, IOUT=300mA 140 300 VIN=VOUT+1V, IOUT=0mA 60 90 µA VIN=VOUT+1V, VSHUTDOWN in off mode 0.1 1.0 µA Output Voltage Temperature Coefficient Short Current Limit (∆VOUT/VOUT) /∆T ISHORT mV AP2128-2.5V to f=100Hz 4.2V, Ripple f=1KHz 1Vp-p VIN=VOUT+1V f=10KHz 68 f=100Hz AP2128-4.75V , Ripple 0.5Vp-p f=1KHz VIN=VOUT+1V f=10KHz 63 f=100Hz 63 f=1KHz 63 f=10KHz 45 AP2128-5.2V , Ripple 0.5Vp-p VIN=6V IOUT=30mA, -40oC≤TA≤85oC VOUT=0V Sept. 2010 Rev. 2.0 300 68 54 63 dB 45 ±100 ppm/oC 50 mA BCD Semiconductor Manufacturing Limited 8 Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2128 Electrical Characteristics (Continued) (AP2128-2.5V/2.8V/3.0V/3.3V/3.9V/4.2V/4.75V, VIN=VOUT+1V; AP2128-5.2V, VIN=6V, CIN=1µF, COUT=1µF, Bold typeface applies over -40oC≤TA≤85oC, unless otherwise specified.) Parameter Soft Start Time Symbol Conditions Min Typ Max Unit µs 50 tUP Shutdown "High" Voltage Shutdown input voltage "High" 1.5 6 V Shutdown "Low" Voltage Shutdown input voltage "Low" 0 0.4 V VOUT Discharge MOSFET RDS(ON) Shutdown input voltage "Low" Shutdown Pull Down Resistance 60 Ω 3 MΩ Thermal Shutdown 165 Thermal Shutdown Hysteresis 30 Thermal Resistance θJC SOT-23-5 Sept. 2010 Rev. 2.0 150 o C oC o C/W BCD Semiconductor Manufacturing Limited 9 Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2128 Typical Performance Characteristics 3.5 0.9 3.5 0.8 3.0 3.0 0.7 2.5 0.6 2.5 Output Voltage (V) Output Voltge (V) Output Voltage (V) 1.0 2.0 0.5 0.4 1.5 o Tc=-40 C o TC=-40 C o Tc=25 CT =25oC C o Tc=85 CTC=125oC VINV=4.4V VIN=2.5V, =0.8V OUT 0.3 1.0 0.2 0.5 0.1 0.0 0.0 00 50 100 100 150 200 200 250 300 300 400 400 350 450 2.0 1.5 o TC=-40 C 1.0 o TC=25 C o TC=85 C 0.5 VIN=4.3V, VOUT=3.3V 0.0 0.0 500 500 0.1 0.2 Output (V) Output Current (mA) 0.3 0.4 0.5 Output Current (A) Figure 4. Output Voltage vs. Output Current Figure 5. Output Voltage vs. Output Current 6.0 3.5 5.5 5.0 4.5 2.5 Output Voltage (V) Output Voltage (V) 3.0 2.0 1.5 1.0 VIN=3.8V 0.5 VIN=6V VIN=4.3V 0.2 0.3 0.4 3.0 2.5 2.0 o TC=-40 C 1.5 o TC=25 C o TC=85 C 0.5 0 0.1 3.5 1.0 TC=25 C, VOUT=3.3V 0.0 0.0 4.0 0.0 0.5 Output Current (A) VIN=6V, VOUT=5.2V 0.0 0.1 0.2 0.3 0.4 0.5 Output Current (A) Figure 6. Output Voltage vs. Output Current Figure 7. Output Voltage vs. Output Current Sept. 2010 Rev. 2.0 BCD Semiconductor Manufacturing Limited 10 Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2128 Typical Performance Characteristics (Continued) 180 240 220 TC=-40 C 200 TC=25 C 160 o TC=-40 C 160 o o TC=25 C 140 o TC=85 C Dropout Voltage (mV) Dropout Voltage (mV) 180 o VOUT=3.3V 140 120 100 80 60 120 o TC=85 C VIN=6V, VOUT=5.2V 100 80 60 40 40 20 20 0 50 100 150 200 250 0 0.00 300 0.05 0.10 Output Current (mA) 0.15 0.20 0.25 0.30 Output Current (A) Figure 8. Dropout Voltage vs. Output Current Figure 9. Dropout Voltage vs. Output Current 0.20 160 150 0.18 140 0.16 120 Dropout Voltage (mV) Dropout Voltage (V) 0.12 0.10 0.08 IOUT=10mA 0.06 IOUT=150mA 0.04 IOUT=300mA -20 0 20 40 60 IOUT=150mA 110 IOUT=300mA 100 VIN=6V, VOUT=5.2V 90 80 70 60 50 40 30 20 VIN=4.3V, VOUT=3.3V 0.02 0.00 -40 IOUT=10mA 130 0.14 10 0 -40 80 o -20 0 20 40 60 80 o Case Temperature ( C) Case Temperature ( C) Figure 10. Dropout Voltage vs. Case Temperature Figure 11. Dropout Voltage vs. Case Temperature Sept. 2010 Rev. 2.0 BCD Semiconductor Manufacturing Limited 11 Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2128 Typical Performance Characteristics (Continued) 115 120 TC=-40 C 105 TC=25 C o 100 TC=85 C 95 VIN=4.3V, VOUT=3.3V 110 TC=-40 C 105 TC=25 C 100 TC=85 C 95 VIN=2.5V, VOUT=0.8V 90 85 80 75 70 65 80 75 70 65 50 100 150 200 250 o 85 55 0 o 90 60 50 o 110 o o Quiescent Current (µA) Quiescent Current (µA) 115 300 0 50 100 Output Current (mA) 150 200 250 300 Output Current (mA) Figure 12. Quiescent Current vs. Output Current Figure 13. Quiescent Current vs. Output Current 70 Quiescent Current (µA) 110 105 100 o TC=-40 C IOUT=0 68 o TC=25 C VIN=2.5V, VOUT=0.8V 66 o TC=85 C Quiescent Current (µA) 115 VIN=6V, VOUT=5.2V 95 90 85 64 62 60 58 56 54 80 52 75 0.00 0.05 0.10 0.15 0.20 0.25 50 -40 0.30 -20 0 20 40 60 80 100 120 o Case Temperature ( C) Output Current (A) Figure 15. Quiescent Current vs. Case Temperature Figure 14. Quiescent Current vs. Output Current Sept. 2010 Rev. 2.0 BCD Semiconductor Manufacturing Limited 12 Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2128 Typical Performance Characteristics (Continued) 71 IOUT=0 70 74 VIN=4.3V, VOUT=3.3V 72 Quiescent Current (µA) Quiescent Current (µA) 69 68 67 66 65 64 70 68 66 64 IOUT=0 62 63 62 -40 -20 0 20 40 60 80 100 VIN=6V, VOUT=5.2V 60 -40 120 -20 0 20 o 80 70 70 60 60 Quiescent Current (µA) Quiescent Current (µA) 80 50 40 30 o 40 30 20 o TC=25 C 0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 IOUT=0, VOUT=3.3V 10 IOUT=0, VOUT=0.8V 1.5 120 50 TC=25 C 10 100 Figure 17. Quiescent Current vs. Case Temperature 80 0 1.0 60 Case Temperature ( C) Figure 16. Quiescent Current vs. Case Temperature 20 40 o Case Temperature ( C) 6.0 0 1 2 3 4 5 6 Input Voltage (V) Input Voltage (V) Figure 18. Quiescent Current vs. Input Voltage Figure 19. Quiescent Current vs. Input Voltage Sept. 2010 Rev. 2.0 BCD Semiconductor Manufacturing Limited 13 Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2128 Typical Performance Characteristics (Continued) 0.807 80 IN IOUT=0, VOUT=5.2V 70 IOUT=10mA, VOUT=0.8V 0.806 60 Output Voltage (V) Quiescent Current (µA) V =2.5V, CIN=COUT=1µF o TC=25 C 50 40 30 0.805 0.804 0.803 20 0.802 10 0 0 1 2 3 4 5 0.801 -40 6 -20 0 20 40 60 80 100 120 o Case Temperature ( C) Input Voltage (V) Figure 20. Quiescent Current vs. Input Voltage Figure 21. Output Voltage vs. Case Temperature 5.250 3.348 IOUT=10mA 3.346 3.344 5.235 Output Voltage (V) Output Voltage (V) VIN=6V, VOUT=5.2V 5.240 3.342 3.340 3.338 3.336 3.334 3.332 3.330 5.230 5.225 5.220 5.215 5.210 5.205 3.328 5.200 3.326 -40 IOUT=10mA 5.245 VIN=4.3V, VOUT=3.3V -20 0 20 40 60 80 100 5.195 -40 120 -20 0 20 40 60 80 100 120 o o Case Temperature ( C) Case Temperature ( C) Figure 22. Output Voltage vs. Case Temperature Figure 23. Output Voltage vs. Case Temperature Sept. 2010 Rev. 2.0 BCD Semiconductor Manufacturing Limited 14 Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2128 Typical Performance Characteristics (Continued) 56 VIN=2.5V, VOUT=0.8V, CIN=COUT=1µF 34 VIN=6V, VOUT=5.2V 54 52 50 Short Current (mA) Short Current (mA) 32 30 28 48 46 44 42 40 38 36 34 26 32 -40 -20 0 20 40 60 80 100 30 -40 120 -20 0 o 0.9 0.8 0.8 0.7 0.7 Output Voltge (V) Output Voltge (V) 1.0 0.9 0.6 0.5 0.4 o TC=-40 C 0.3 o TC=25 C 0.2 VOUT=0.8V 1 2 3 4 5 80 100 120 6 0.6 0.5 0.4 o TC=-40 C 0.3 o TC=25 C 0.2 o TC=85 C 0 60 Figure 25. Short Current vs. Case Temperature 1.0 0.0 40 Case Temperature ( C) Figure 24. Short Current vs. Case Temperature 0.1 20 o Case Temperature ( C) o TC=85 C 0.1 7 0.0 8 Input Voltage (V) Figure 26. Output Voltage vs. Input Voltage (IOUT=0mA) VOUT=0.8V 0 1 2 3 4 5 6 Input Voltage (V) Figure 27. Output Voltage vs. Input Voltage (IOUT=300mA) Sept. 2010 Rev. 2.0 BCD Semiconductor Manufacturing Limited 15 Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2128 Typical Performance Characteristics (Continued) 6 o 3.5 TC=-40 C o o TC=25 C 2.5 TC=25 C o o IOUT=0, VOUT=3.3V 2.0 1.5 1.0 TC=85 C 4 IOUT=0, VOUT=5.2V 3 2 1 0.5 0.0 0.0 o TC=85 C Output Voltage (V) Output Voltage (V) 3.0 TC=-40 C 5 0.5 1.0 1.5 2.0 2.5 3.0 0 3.5 Input Voltage (V) 0 1 2 3 4 5 6 Input Voltage (V) Figure 28. Output Voltage vs. Input Voltage Figure 29. Output Voltage vs. Input Voltage 2.0 VOUT=0.8V 1.8 No heatsink Power Dissipation (W) 1.6 1.4 IOUT 1.2 1.0 0.8 0.6 VOUT 0.4 0.2 0.0 -40 -20 0 20 40 60 80 100 120 o Case Temperature ( C) Figure 30. Power Dissipation vs. Case Temperature Figure 31. Load Transient (Conditions: CIN=COUT=1µF, VIN=2.5V, VOUT=0.8V, IOUT=10mA to 300mA) Sept. 2010 Rev. 2.0 BCD Semiconductor Manufacturing Limited 16 Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2128 Typical Performance Characteristics (Continued) IOUT VIN VOUT VOUT Figure 32. Load Transient Figure 33. Line Transient (Conditions: CIN=COUT=1µF, VIN=4.4V, VOUT=3.3V IOUT=10mA to 300mA) (Conditions: IOUT=30mA, CIN=COUT=1µF, VIN=2.5 to 3.5V, VOUT=0.8V) VIN VOUT VShutdown VOUT Figure 34. Line Transient Figure 35. Soft Start Time (Conditions: IOUT=30mA, CIN=COUT=1µF, (Conditions: IOUT=0mA, CIN=COUT=1µF, VIN=4 to 5V, VOUT=3.3V) VShutdown=0 to 2V, VOUT=3.3V) Sept. 2010 Rev. 2.0 BCD Semiconductor Manufacturing Limited 17 Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2128 Typical Performance Characteristics (Continued) 100 IOUT=10mA 90 IOUT=300mA 80 ripple=1Vpp, COUT=1µF, VOUT=0.8V 70 PSRR (dB) VOUT 60 50 40 30 VShutdown 20 10 0 100 1000 10000 100000 Frequency (Hz) Figure 36. Soft Start Time (Conditions: IOUT=0mA, CIN=COUT=1µF, Figure 37. PSRR vs. Frequency VShutdown=0 to 2V, VOUT=0.8V) 100 70 IOUT=10mA 90 IOUT=300mA 80 70 50 60 PSRR (dB) PSRR (dB) 60 ripple=1Vpp, COUT=1µF, VOUT=3.3V 50 40 30 20 40 30 20 10 0 100 1000 10000 10 100000 Frequency (Hz) IOUT=10mA IOUT=300mA VOUT=5.2V, COUT=1µF, ripple=0.5Vpp 100 1k 10k 100k Frequency (Hz) Figure 39. PSRR vs. Frequency Figure 38. PSRR vs. Frequency Sept. 2010 Rev. 2.0 BCD Semiconductor Manufacturing Limited 18 Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2128 Typical Application VIN VOUT VIN VOUT AP2128 Shutdown R1 ADJ R2 CIN 1µF COUT 1µF GND VOUT=0.8(1+R1/R2) V VOUT VIN VIN VOUT AP2128 Shutdown CIN 1µF COUT 1µF GND VOUT=1.0V to 5.2V Figure 40. Typical Application of AP2128 Sept. 2010 Rev. 2.0 BCD Semiconductor Manufacturing Limited 19 Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2128 Mechanical Dimensions SOT-23-5 Unit: mm(inch) 0.300(0.012) 0.600(0.024) 1.500(0.059) 1.700(0.067) 0.100(0.004) 0.200(0.008) 2.950(0.116) 2.650(0.104) 2.820(0.111) 3.020(0.119) 0.200(0.008) 0.700(0.028) REF 0.300(0.012) 0.400(0.016) 0° 8° 1.800(0.071) 2.000(0.079) 0.000(0.000) MAX 1.450(0.057) 0.950(0.037) TYP 0.150(0.006) 0.900(0.035) 1.300(0.051) Sept. 2010 Rev. 2.0 BCD Semiconductor Manufacturing Limited 20 BCD Semiconductor Manufacturing Limited http://www.bcdsemi.com IMPORTANT NOTICE IMPORTANT NOTICE BCD Semiconductor BCD Semiconductor Manufacturing Manufacturing Limited Limited reserves reserves the the right right to to make make changes changes without without further further notice notice to to any any products products or or specifispecifications herein. cations herein. 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