Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR General Description Features The AP2129 is a 300mA, positive Voltage regulator ICs fabricated by CMOS process. The AP2129 provides two kinds of output voltage operation modes for setting the output voltage. Fixed output voltage mode senses the output voltage on VOUT, adjustable · · · · · · · · · output voltage mode needs two resistors as a voltage divider The AP2129 Series have features of low dropout voltage, low noise, high output voltage accuracy, and low current consumption which make them ideal for use in various battery-powered devices. · · · AP2129 has 1.0V, 1.2V, 3.3V fixed voltage version and 0.8V to 4.5V adjustable voltage version. AP2129 Wide Operating Voltage: 1.8V to 6V High Output Voltage Accuracy: ±2% High Ripple Rejection: 65dB@ f=1kHz, 45dB@ f=10kHz Low Standby Current: 0.1µA Low Quiescent Current: 60µA Typical Low Output Noise: 60µVrms Short Current Limit: 50mA Over Temperature Protection Compatible with Low ESR Ceramic Capacitor: 1µF for CIN and COUT Excellent Line/Load Regulation Soft Start Time: 50µs Auto Discharge Resistance: RDS(ON)=60Ω Applications AP2129 series are available in SOT-23-5 Package. · · · Datacom Notebook Computers Mother Board SOT-23-5 Figure 1. Package Type of AP2129 Jul. 2008 Rev. 1.0 BCD Semiconductor Manufacturing Limited 1 Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2129 Pin Configuration K Package (SOT-23-5) Shutdown 1 GND 2 VIN 3 5 ADJ/NC 4 VOUT Figure 2. Pin Configuration of AP2129 (Top View) Functional Block Diagram UVLO & Shutdown Logic SHUTDOWN VIN Foldback Current Limit Thermal Shutdown VOUT 3MΩ NC VREF GND Jul. 2008 Rev. 1.0 BCD Semiconductor Manufacturing Limited 2 Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2129 Functional Block Diagram (Continued) UVLO & Shutdown Logic SHUTDOWN VIN Foldback Current Limit Thermal Shutdown VOUT 3MΩ ADJ VREF GND Figure 3. Functional Block Diagram of AP2129 Jul. 2008 Rev. 1.0 BCD Semiconductor Manufacturing Limited 3 Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2129 Ordering Information AP2129 G1: Green Circuit Type TR: Tape and Reel Package ADJ: ADJ Output 1.0: Fixed Output 1.0V 1.2: Fixed Output 1.2V 3.3: Fixed Output 3.3V K: SOT-23-5 Product AP2129 Package SOT-23-5 Temperature Range -40 to 85oC Part Number Marking ID Packing Type AP2129K- ADJTRG1 GEJ Tape & Reel AP2129K-1.0TRG1 GEK Tape & Reel AP2129K-1.2TRG1 GEL Tape & Reel AP2129K-3.3TRG1 GEM Tape & Reel BCD Semiconductor's products, as designated with "G1" suffix in the part number, are RoHS compliant and Green. Jul. 2008 Rev. 1.0 BCD Semiconductor Manufacturing Limited 4 Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2129 Absolute Maximum Ratings (Note 1) Parameter Symbol Value Unit Input Voltage VIN 6.5 V Shutdown Input Voltage VCE -0.3 to VIN+0.3 V Output Current IOUT 450 mA TJ 150 oC TSTG -65 to 150 oC TLEAD 260 Thermal Resistance RθJA 250 oC/W ESD (Human Body Model) ESD 6000 V ESD (Machine Model) ESD 300 V Junction Temperature Storage Temperature Range Lead Temperature (Soldering, 10sec) o C Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods may affect device reliability. Recommended Operating Conditions Parameter Symbol Min Max Unit Input Voltage VIN 1.8 6 V TJ -40 85 oC Operating Junction Temperature Range Jul. 2008 Rev. 1. 0 BCD Semiconductor Manufacturing Limited 5 Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2129 Electrical Characteristics AP2129-1.0, 1.2 and 3.3 Electrical Characteristics (CIN=1µF, COUT=1µF, Bold typeface applies over -40oC≤TJ≤85oC, unless otherwise specified. Parameter Output Voltage Input Voltage Maximum Output Current Symbol VOUT Conditions Min VIN=VOUT+1V, (Note 2) 1mA≤IOUT≤300mA VIN Typ Max Unit 98%* VOUT 102%* VOUT V 1.8 6 V 450 IOUT(MAX) mA Load Regulation ∆VOUT /(∆IOUT*VOUT) VIN-VOUT=1V, (Note 2) 1mA≤IOUT≤300mA 0.6 %/A Line Regulation ∆VOUT /(∆VIN*VOUT) VOUT+0.5V≤VIN≤6V, (Note 2) IOUT=30mA 0.06 %/V VOUT=1.0V, IOUT=300mA 1400 1500 Dropout Voltage VDROP VOUT=1.2V, IOUT=300mA 1200 1300 VOUT=3.3V, IOUT=300mA 170 300 IQ VIN=VOUT+1V, IOUT=0mA 60 90 µA 0.1 1.0 µA Quiescent Current Standby Current ISTD VIN=VOUT+1V, VSHUTDOWN in off mode Power Supply Rejection Ratio PSRR Ripple 1Vp-p VIN=VOUT+1V Output Voltage Temperature Coefficient (∆VOUT/VOUT) /∆T mV f=100Hz 65 dB f=1KHz 65 dB f=10KHz 45 dB ±100 ppm/oC IOUT=30mA, -40oC≤TJ≤85oC Output Current Limit ILIMIT VIN-VOUT=1V, VOUT=0.98*VOUT 400 mA Short Current Limit ISHORT VOUT=0V 50 mA 50 µs 60 µVrms Soft Start Time RMS Output Noise tUP VNOISE Shutdown "High" Voltage TA=25oC, 10Hz ≤f≤100kHz Shutdown input voltage "High" 1.5 6 V Shutdown "Low" Voltage Shutdown input voltage "Low" 0 0.4 V VOUT Discharge MOSFET RDS(ON) Shutdown input voltage "Low" Shutdown Pull Down Resistance 60 Ω 3 MΩ Thermal Shutdown 165 Thermal Shutdown Hysteresis 30 o C oC Note 2: VIN=1.8V for 1.0 and 1.2 version Jul. 2008 Rev. 1.0 BCD Semiconductor Manufacturing Limited 6 Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2129 Electrical Characteristics (Continued) AP2129-ADJ Electrical Characteristics (CIN=1µF, COUT=1µF, Bold typeface applies over -40oC≤TJ≤85oC, unless otherwise specified.) Parameter Reference Voltage Input Voltage Maximum Output Current Symbol VREF Conditions VIN=1.8V 1mA≤IOUT≤300mA VIN Min Typ Max Unit 0.748 0.8 0.816 V 6 V 1.8 IOUT(MAX) 450 mA Load Regulation ∆VOUT /(∆IOUT*VOUT) VIN-VOUT=1V, 1mA≤IOUT≤300mA 0.6 %/A Line Regulation ∆VOUT /(∆VIN*VOUT) VOUT+0.5V≤VIN≤6V IOUT=30mA 0.06 %/V Quiescent Current Standby Current Power Supply Rejection Ratio Output Voltage Temperature Coefficient VIN=VOUT+1V, IOUT=0mA 60 90 µA ISTD VIN=VOUT+1V, VSHUTDOWN in off mode 0.1 1.0 µA PSRR Ripple 1Vp-p VIN=VOUT+1V IQ (∆VOUT/VOUT) /∆T Output Current Limit ILIMIT Short Current Limit ISHORT Soft Start Time RMS Output Noise f=100Hz 65 dB f=1KHz 65 dB f=10KHz 45 dB ±100 ppm/oC 400 mA 50 mA 50 µs 60 µVrms IOUT=30mA, -40oC≤TJ≤85oC VOUT=0V tUP VNOISE o TA=25 C, 10Hz ≤f≤100kHz Shutdown "High" Voltage Shutdown input voltage "High" 1.5 6 V Shutdown "Low" Voltage Shutdown input voltage "Low" 0 0.4 V VOUT Discharge MOSFET RDS(ON) Shutdown input voltage "Low" Shutdown Pull Down Resistance 60 Ω 3 MΩ Thermal Shutdown 165 o C Thermal Shutdown Hysteresis 30 o C Jul. 2008 Rev. 1. 0 BCD Semiconductor Manufacturing Limited 7 Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2129 Typical Performance Characteristics 100 3.5 VOUT=0.8V 90 3.0 Supply Current(µA) Output Voltage (V) 2.0 1.5 o TC=-40 C 1.0 o TC=25 C o TC=125 C VIN=4.4V 0.5 0 50 100 150 200 250 300 350 400 450 60 50 40 30 20 10 0 0.0 500 Output Current (mA) 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 Input Voltage(V) Figure 4. Output Voltage vs. Output Current Figure 5. Supply Current vs. input Current 120 60 VOUT=0.8V 110 VOUT=0.8V 58 VIN=1.8V VIN=1.8V No Load 56 o TC=25 C 100 54 Supply Current(µA) Supply Current (µA) o Tc=25 C 70 2.5 0.0 No Load 80 90 80 70 60 52 50 48 46 44 50 40 0.00 42 0.03 0.06 0.09 0.12 0.15 0.18 0.21 0.24 0.27 40 -40 0.30 Output Current(A) -20 0 20 40 60 80 o Case Temperature( C) Figure 6. Supply Current vs. Output Current Figure 7. Supply Current vs. Case Temperature Jul. 2008 Rev. 1.0 BCD Semiconductor Manufacturing Limited 8 Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2129 Typical Performance Characteristics (Continued) 0.90 VOUT=0.8V 320 IO=150mA 0.86 Ouput short to GND 240 VOUT=0.8V 0.84 Output Voltage(V) Short Current (mA) 280 IO=10mA 0.88 VIN=1.8V 200 160 120 VIN=1.8V 0.82 0.80 0.78 0.76 80 0.74 40 0 0.72 -30 -15 0 15 30 45 60 0.70 75 -30 -15 0 o Case Temperature( C) 0.9 0.8 0.8 0.7 0.7 Output Voltage (V) Output Voltage (V) 1.0 0.9 0.6 0.5 o TC=-40 C o TC=125 C o TC=25 C VOUT=0.8V 0.2 0.1 45 60 75 Figure 9. Output Voltage vs. Case Temperature 1.0 0.3 30 o Figure 8. Shot Output vs. Case Temperature 0.4 15 Case Temperature( C) 0.6 0.5 0.4 o TC=-40 C o 0.3 TC=25 C 0.2 TC=125 C o VOUT=0.8V 0.1 VIN=1.8V 0.0 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50 0.55 0.60 0.0 0.0 Output Current(A) No Load 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 Input Voltage(V) Figure 10. Output Voltage vs. Output Current Figure 11. Output Voltage vs. Input Voltage Jul. 2008 Rev. 1. 0 BCD Semiconductor Manufacturing Limited 9 Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2129 Typical Performance Characteristics (Continued) 1.0 0.9 Output Voltge (V) 0.8 0.7 IOUT 0.6 0.5 0.4 o 0.3 TC=-40 C 0.2 TC=25 C o 0.0 VOUT o TC=85 C VOUT=0.8V 0.1 0 1 2 3 4 5 6 Input Voltage (V) Figure 13. Load Transient Figure 12. Output Voltage vs. Input Voltage (IOUT=300mA) (Conditions: CIN=COUT=1µF, VIN=2.5V, VOUT=0.8V) IOUT VIN VOUT VOUT Figure 14. Load Transient Figure 15. Line Transient (Conditions: CIN=COUT=1µF, VIN=4.4V, VOUT=3.3V) (Conditions: IOUT=30mA, CIN=COUT=1µF, VIN=2.5 to 3.5V, VOUT=0.8V) Jul. 2008 Rev. 1.0 BCD Semiconductor Manufacturing Limited 10 Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2129 Typical Performance Characteristics (Continued) VIN VOUT VShutdown VOUT Figure 16. Line Transient Figure 17. Soft Start Time (Conditions: IOUT=30mA, CIN=COUT=1µF, (Conditions: IOUT=0mA, CIN=COUT=1µF, VIN=4 to 5V, VOUT=3.3V) VShutdown=0 to 2V, VOUT=3.3V) 100 IOUT=10mA IOUT=300mA ripple=1Vpp, COUT=1µF, VOUT=0.8V 90 80 PSRR (dB) 70 VOUT 60 50 40 30 VShutdown 20 10 0 100 1000 10000 100000 Frequency (Hz) Figure 18. Soft Start Time Figure 19. PSSR vs. Frequency (Conditions: IOUT=0mA, CIN=COUT=1µF, VShutdown=0 to 2V, VOUT=0.8V) Jul. 2008 Rev. 1. 0 BCD Semiconductor Manufacturing Limited 11 Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2129 Typical Performance Characteristics (Continued) 100 2.0 IOUT=10mA IOUT=300mA ripple=1Vpp, COUT=1µF, VOUT=3.3V 90 80 1.6 Power Dissipation (W) PSRR (dB) 70 60 50 40 30 20 1.4 1.2 1.0 0.8 0.6 0.4 10 0 VOUT=0.8V No heatsink 1.8 0.2 100 1000 10000 0.0 -40 100000 Frequency (Hz) -20 0 20 40 60 80 100 120 o Case Temperature( C) Figure 20. PSRR vs. Frequency Figure 21. Power Dissipation vs. Case Temperature Jul. 2008 Rev. 1.0 BCD Semiconductor Manufacturing Limited 12 Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2129 Typical Application VIN VOUT VIN VOUT AP2129 Shutdown R1 ADJ R2 CIN 1µF COUT 1µF GND VOUT=0.8*(1+R1/R2) V VIN VOUT VIN VOUT AP2129 Shutdown CIN 1µF COUT 1µF GND VOUT=1.0, 1.2, 3.3V Figure 23. Typical Application of AP2129 Jul. 2008 Rev. 1. 0 BCD Semiconductor Manufacturing Limited 13 Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2129 Mechanical Dimensions SOT-23-5 Unit: mm(inch) 0.300(0.012) 0.600(0.024) 1.500(0.059) 1.700(0.067) 0.100(0.004) 0.200(0.008) 2.950(0.116) 2.650(0.104) 2.820(0.111) 3.020(0.119) 0.200(0.008) 0.700(0.028) REF 0.300(0.012) 0.400(0.016) 0° 8° 1.800(0.071) 2.000(0.079) 1.250(0.049) 1.050(0.041) 0.950(0.037) TYP 0.000(0.000) 0.100(0.004) 1.050(0.041) 1.150(0.045) Jul. 2008 Rev. 1.0 BCD Semiconductor Manufacturing Limited 14 BCD Semiconductor Manufacturing Limited http://www.bcdsemi.com IMPORTANT NOTICE IMPORTANT NOTICE BCD Semiconductor BCD Semiconductor Manufacturing Manufacturing Limited Limited reserves reserves the the right right to to make make changes changes without without further further notice notice to to any any products products or or specifispecifications herein. cations herein. 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