Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR General Description Features The AP2129 is a 300mA, positive Voltage regulator ICs fabricated by CMOS process. The AP2129 provides two kinds of output voltage operation modes for setting the output voltage. Fixed output voltage mode senses the output voltage on VOUT, adjustable · · · · · · · · · output voltage mode needs two resistors as a voltage divider The AP2129 Series have features of low dropout voltage, low noise, high output voltage accuracy, and low current consumption which make them ideal for use in various battery-powered devices. · · · AP2129 has 1.0V, 1.2V, 3.3V fixed voltage version and 0.8V to 4.5V adjustable voltage version. AP2129 Wide Operating Voltage: 1.8V to 6V High Output Voltage Accuracy: ±2% High Ripple Rejection: 65dB@ f=1kHz, 45dB@ f=10kHz Low Standby Current: 0.1µA Low Quiescent Current: 60µA Typical Low Output Noise: 60µVrms Short Current Limit: 50mA Over Temperature Protection Compatible with Low ESR Ceramic Capacitor: 1µF for CIN and COUT Excellent Line/Load Regulation Soft Start Time: 50µs Auto Discharge Resistance: RDS(ON)=60Ω Applications AP2129 series are available in SOT-23-5 Package. · · · Datacom Notebook Computers Mother Board SOT-23-5 Figure 1. Package Type of AP2129 Oct. 2009 Rev. 1.1 BCD Semiconductor Manufacturing Limited 1 Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2129 Pin Configuration K Package (SOT-23-5) Shutdown 1 GND 2 VIN 3 5 ADJ/NC 4 VOUT Figure 2. Pin Configuration of AP2129 (Top View) Functional Block Diagram UVLO & Shutdown Logic SHUTDOWN VIN Foldback Current Limit Thermal Shutdown VOUT 3MΩ NC VREF GND Oct. 2009 Rev. 1.1 BCD Semiconductor Manufacturing Limited 2 Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2129 Functional Block Diagram (Continued) UVLO & Shutdown Logic SHUTDOWN VIN Foldback Current Limit Thermal Shutdown VOUT 3MΩ ADJ VREF GND Figure 3. Functional Block Diagram of AP2129 Oct. 2009 Rev. 1.1 BCD Semiconductor Manufacturing Limited 3 Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2129 Ordering Information AP2129 G1: Green Circuit Type TR: Tape and Reel Package ADJ: ADJ Output 1.0: Fixed Output 1.0V 1.2: Fixed Output 1.2V 3.3: Fixed Output 3.3V K: SOT-23-5 Product AP2129 Package SOT-23-5 Temperature Range -40 to 85oC Part Number Marking ID Packing Type AP2129K- ADJTRG1 GEJ Tape & Reel AP2129K-1.0TRG1 GEK Tape & Reel AP2129K-1.2TRG1 GEL Tape & Reel AP2129K-3.3TRG1 GEM Tape & Reel BCD Semiconductor's products, as designated with "G1" suffix in the part number, are RoHS compliant and Green. Oct. 2009 Rev. 1.1 BCD Semiconductor Manufacturing Limited 4 Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2129 Absolute Maximum Ratings (Note 1) Parameter Symbol Value Unit Input Voltage VIN 6.5 V Shutdown Input Voltage VCE -0.3 to VIN+0.3 V Output Current IOUT 450 mA TJ 150 oC TSTG -65 to 150 oC TLEAD 260 Thermal Resistance θJA 250 oC/W ESD (Human Body Model) ESD 6000 V ESD (Machine Model) ESD 200 V Junction Temperature Storage Temperature Range Lead Temperature (Soldering, 10sec) o C Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods may affect device reliability. Recommended Operating Conditions Parameter Symbol Min Max Unit Input Voltage VIN 1.8 6 V TJ -40 85 oC Operating Junction Temperature Range Oct. 2009 Rev. 1.1 BCD Semiconductor Manufacturing Limited 5 Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2129 Electrical Characteristics AP2129-1.0/1.2/3.3 Electrical Characteristics (CIN=1µF, COUT=1µF, Bold typeface applies over -40oC≤TJ≤85oC, unless otherwise specified. Parameter Output Voltage Input Voltage Maximum Output Current Symbol VOUT Conditions VIN=VOUT+1V, (Note 2) 1mA≤IOUT≤300mA VIN Min Max Unit 98%* VOUT 102%* VOUT V 1.8 6 V IOUT(MAX) Typ 450 mA Load Regulation ∆VOUT /(∆IOUT*VOUT) VIN-VOUT=1V, (Note 2) 1mA≤IOUT≤300mA 0.6 %/A Line Regulation ∆VOUT /(∆VIN*VOUT) VOUT+0.5V≤VIN≤6V, (Note 2) IOUT=30mA 0.06 %/V Dropout Voltage Quiescent Current Standby Current Power Supply Rejection Ratio Output Voltage Temperature Coefficient VDROP IQ ISTD PSRR (∆VOUT/VOUT) /∆T VOUT=1.0V, IOUT=300mA 1400 1500 VOUT=1.2V, IOUT=300mA 1200 1300 VOUT=3.3V, IOUT=300mA 170 300 VIN=VOUT+1V, IOUT=0mA 60 90 µA VIN=VOUT+1V, VSHUTDOWN in off mode 0.1 1.0 µA Ripple 1Vp-p VIN=VOUT+1V f=100Hz 65 dB f=1KHz 65 dB f=10KHz 45 dB ±100 ppm/oC 400 mA IOUT=30mA, -40oC≤TJ≤85oC Output Current Limit ILIMIT VIN-VOUT=1V, VOUT=0.98*VOUT Short Current Limit ISHORT VOUT=0V Soft Start Time RMS Output Noise tUP VNOISE mV TA=25oC, 10Hz ≤f≤100kHz 50 mA 50 µs 60 µVrms Shutdown "High" Voltage Shutdown input voltage "High" 1.5 6 V Shutdown "Low" Voltage Shutdown input voltage "Low" 0 0.4 V VOUT Discharge MOSFET RDS(ON) Shutdown input voltage "Low" Shutdown Pull Down Resistance 60 Ω 3 MΩ Thermal Shutdown 165 Thermal Shutdown Hysteresis 30 Thermal Resistance θJC SOT-23-5 150 o C oC o C/W Note 2: VIN=1.8V for 1.0 and 1.2 version Oct. 2009 Rev. 1.1 BCD Semiconductor Manufacturing Limited 6 Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2129 Electrical Characteristics (Continued) AP2129-ADJ Electrical Characteristics (CIN=1µF, COUT=1µF, Bold typeface applies over -40oC≤TJ≤85oC, unless otherwise specified.) Parameter Reference Voltage Input Voltage Maximum Output Current Symbol VREF Conditions VIN=1.8V 1mA≤IOUT≤300mA VIN Min Typ Max Unit 0.748 0.8 0.816 V 6 V 1.8 IOUT(MAX) 450 mA Load Regulation ∆VOUT /(∆IOUT*VOUT) VIN-VOUT=1V, 1mA≤IOUT≤300mA 0.6 %/A Line Regulation ∆VOUT /(∆VIN*VOUT) VOUT+0.5V≤VIN≤6V IOUT=30mA 0.06 %/V Quiescent Current Standby Current Power Supply Rejection Ratio Output Voltage Temperature Coefficient IQ ISTD PSRR (∆VOUT/VOUT) /∆T Output Current Limit ILIMIT Short Current Limit ISHORT Soft Start Time RMS Output Noise VIN=VOUT+1V, IOUT=0mA 60 90 µA VIN=VOUT+1V, VSHUTDOWN in off mode 0.1 1.0 µA Ripple 1Vp-p VIN=VOUT+1V f=100Hz 65 dB f=1KHz 65 dB f=10KHz 45 dB ±100 ppm/oC 400 mA 50 mA 50 µs 60 µVrms IOUT=30mA, -40oC≤TJ≤85oC VOUT=0V tUP VNOISE o TA=25 C, 10Hz ≤f≤100kHz Shutdown "High" Voltage Shutdown input voltage "High" 1.5 6 V Shutdown "Low" Voltage Shutdown input voltage "Low" 0 0.4 V VOUT Discharge MOSFET RDS(ON) Shutdown input voltage "Low" Shutdown Pull Down Resistance 60 Ω 3 MΩ Thermal Shutdown 165 o C Thermal Shutdown Hysteresis 30 o C Thermal Resistance θJC SOT-23-5 150 Oct. 2009 Rev. 1.1 oC/W BCD Semiconductor Manufacturing Limited 7 Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2129 Typical Performance Characteristics 100 VOUT=0.8V 90 3.5 No Load 80 3.0 o Tc=25 C Supply Current(µA) 70 Output Voltage (V) 2.5 2.0 1.5 o T C=-40 C 1.0 50 40 30 o T C=25 C 20 o T C=125 C 0.5 10 VIN=4.4V 0.0 60 0 50 100 150 200 250 300 350 400 450 0 0.0 500 0.5 1.0 1.5 2.0 Output Current (mA) Figure 4. Output Voltage vs. Output Current 3.0 3.5 4.0 4.5 5.0 5.5 6.0 Figure 5. Supply Current vs. input Current 120 60 VOUT=0.8V 110 VOUT=0.8V 58 VIN=1.8V VIN=1.8V No Load 56 o TC=25 C 100 54 Supply Current(µA) Supply Current (µA) 2.5 Input Voltage(V) 90 80 70 60 52 50 48 46 44 50 40 0.00 42 0.03 0.06 0.09 0.12 0.15 0.18 0.21 0.24 0.27 40 -40 0.30 Output Current(A) -20 0 20 40 60 80 o Case Temperature( C) Figure 6. Supply Current vs. Output Current Figure 7. Supply Current vs. Case Temperature Oct. 2009 Rev. 1.1 BCD Semiconductor Manufacturing Limited 8 Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2129 Typical Performance Characteristics (Continued) 0.90 VOUT=0.8V 320 IO=150mA 0.86 Ouput short to GND 240 VOUT=0.8V 0.84 Output Voltage(V) Short Current (mA) 280 IO=10mA 0.88 VIN=1.8V 200 160 120 VIN=1.8V 0.82 0.80 0.78 0.76 80 0.74 40 0 0.72 -30 -15 0 15 30 45 60 0.70 75 -30 -15 0 o Case Temperature( C) 0.9 0.8 0.8 0.7 0.7 Output Voltage (V) Output Voltage (V) 1.0 0.9 0.6 0.5 o TC=-40 C o TC=125 C o TC=25 C VOUT=0.8V 0.2 0.1 45 60 75 Figure 9. Output Voltage vs. Case Temperature 1.0 0.3 30 o Figure 8. Shot Output vs. Case Temperature 0.4 15 Case Temperature( C) 0.6 0.5 0.4 o TC=-40 C o 0.3 TC=25 C 0.2 TC=125 C o VOUT=0.8V 0.1 VIN=1.8V 0.0 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50 0.55 0.60 0.0 0.0 Output Current(A) No Load 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 Input Voltage(V) Figure 10. Output Voltage vs. Output Current Figure 11. Output Voltage vs. Input Voltage Oct. 2009 Rev. 1.1 BCD Semiconductor Manufacturing Limited 9 Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2129 Typical Performance Characteristics (Continued) 1.0 0.9 Output Voltge (V) 0.8 0.7 IOUT 0.6 0.5 0.4 o 0.3 TC=-40 C 0.2 TC=25 C o 0.0 VOUT o TC=85 C VOUT=0.8V 0.1 0 1 2 3 4 5 6 Input Voltage (V) Figure 12. Output Voltage vs. Input Voltage (IOUT=300mA) Figure 13. Load Transient (Conditions: CIN=COUT=1µF, VIN=2.5V, VOUT=0.8V) IOUT VIN VOUT VOUT Figure 14. Load Transient Figure 15. Line Transient (Conditions: CIN=COUT=1µF, VIN=4.4V, VOUT=3.3V) (Conditions: IOUT=30mA, CIN=COUT=1µF, VIN=2.5 to 3.5V, VOUT=0.8V) Oct. 2009 Rev. 1.1 BCD Semiconductor Manufacturing Limited 10 Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2129 Typical Performance Characteristics (Continued) VIN VOUT VShutdown VOUT Figure 16. Line Transient Figure 17. Soft Start Time (Conditions: IOUT=30mA, CIN=COUT=1µF, (Conditions: IOUT=0mA, CIN=COUT=1µF, VIN=4 to 5V, VOUT=3.3V) VShutdown=0 to 2V, VOUT=3.3V) 100 IOUT=10mA 90 IOUT=300mA 80 ripple=1Vpp, COUT=1µF, VOUT=0.8V PSRR (dB) 70 VOUT 60 50 40 30 VShutdown 20 10 0 100 1000 10000 100000 Frequency (Hz) Figure 18. Soft Start Time Figure 19. PSSR vs. Frequency (Conditions: IOUT=0mA, CIN=COUT=1µF, VShutdown=0 to 2V, VOUT=0.8V) Oct. 2009 Rev. 1.1 BCD Semiconductor Manufacturing Limited 11 Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2129 Typical Performance Characteristics (Continued) 100 2.0 90 IOUT=10mA 1.8 80 IOUT=300mA 1.6 ripple=1Vpp, COUT=1µF, VOUT=3.3V Power Dissipation (W) PSRR (dB) 70 60 50 40 30 20 No heatsink 1.4 1.2 1.0 0.8 0.6 0.4 10 0 VOUT=0.8V 0.2 100 1000 10000 0.0 -40 100000 Frequency (Hz) -20 0 20 40 60 80 100 120 o Case Temperature( C) Figure 21. Power Dissipation vs. Case Temperature Figure 20. PSRR vs. Frequency Oct. 2009 Rev. 1.1 BCD Semiconductor Manufacturing Limited 12 Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2129 Typical Application VOUT VIN VIN VOUT AP2129 Shutdown R1 ADJ R2 CIN 1µF COUT 1µF GND VOUT=0.8*(1+R1/R2) V VOUT VIN VIN VOUT AP2129 Shutdown CIN 1µF COUT 1µF GND VOUT=1.0V, 1.2V, 3.3V Figure 22. Typical Application of AP2129 Oct. 2009 Rev. 1.1 BCD Semiconductor Manufacturing Limited 13 Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2129 Mechanical Dimensions SOT-23-5 Unit: mm(inch) 0.300(0.012) 0.600(0.024) 1.500(0.059) 1.700(0.067) 0.100(0.004) 0.200(0.008) 2.950(0.116) 2.650(0.104) 2.820(0.111) 3.020(0.119) 0.200(0.008) 0.700(0.028) REF 0.300(0.012) 0.400(0.016) 0° 8° 1.800(0.071) 2.000(0.079) 0.000(0.000) MAX 1.450(0.057) 0.950(0.037) TYP 0.100(0.004) 0.900(0.035) 1.300(0.051) Oct. 2009 Rev. 1.1 BCD Semiconductor Manufacturing Limited 14 BCD Semiconductor Manufacturing Limited http://www.bcdsemi.com IMPORTANT NOTICE IMPORTANT NOTICE BCD Semiconductor BCD Semiconductor Manufacturing Manufacturing Limited Limited reserves reserves the the right right to to make make changes changes without without further further notice notice to to any any products products or or specifispecifications herein. cations herein. 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