Data Sheet 100mA REGULATED CHARGE PUMP AP3602A/B General Description Features The AP3602A/B are regulated step-up DC/DC converters based on charge pump technique. These ICs have the ability to supply 100mA constant output current or 250mA peak output current for 100ms from 3.0V to 5V input (2.7V to 4.5 V for AP3602B), so they can be used as white LEDs driver or flash LED driver. · · · Low Quiescent Current: 13µA Typical Regulated Output Voltage Precision: 4% High Output Current: 100mA when VIN≥3.0V 50mA when VIN≥2.7V · · · · · High Frequency: up to 1.2 MHz Low Shutdown Supply Current: <1µA High Output Peak Current: 250mA for 100ms Over Temperature Protection Operating Temperature Range: -40oC to 85oC The AP3602A/B have very low power dissipation and high efficiency in typical applications. Other features include over-temperature protection, low temperature coefficient and etc. to meet some special requirements of hand-held battery powered devices. Applications Only 3 external capacitors are required in applications, which helps to save space and lower cost. These chips also have a disable terminal to turn on or turn off the chip to ease the use. · · · · · The AP3602A/B are available in SOT-23-6 package. Mobile Phone Backlight Driver Camera Flash LED Driver MP3, MP4 Handheld Device Portable Communication Device SOT-23-6 Figure 1. Package Type of AP3602A/B Apr. 2007 Rev. 1.2 BCD Semiconductor Manufacturing Limited 1 Data Sheet 100mA REGULATED CHARGE PUMP AP3602A/B Pin Configuration K Package (SOT-23-6) VOUT 1 6 C+ GND 2 5 VIN SHDN 3 4 C- Figure 2. Pin Configuration of AP3602A/B (Top View) Pin Description Pin Number Pin Name Function 1 VOUT Regulated Output Voltage. VOUT should be bypassed with a 1µF to 22µF low ESR ceramic capacitor which is placed as close to the pin as possible for best performance 2 GND Ground. GND should be tied to a ground plane for best performance. The COUT and CIN should be placed as close to this pin as possible 3 SHDN Active Low Shutdown Input. A low signal on SHDN disables the AP3602A/B, while a high signal enables the AP3602A/B. SHDN pin must not be allowed to float 4 C- Flying Capacitor Negative Terminal. The flying capacitor should be placed as close to this pin as possible 5 VIN Input Supply Voltage. VIN should be bypassed with a 1µF to 22µF low ESR ceramic capacitor which is placed as close to the pin as possible for best performance 6 C+ Flying Capacitor Positive Terminal. The flying capacitor should be placed as close to this pin as possible Apr. 2007 Rev. 1.2 BCD Semiconductor Manufacturing Limited 2 Data Sheet 100mA REGULATED CHARGE PUMP AP3602A/B Functional Block Diagram VIN 5 OTP S3 SHDN S1 3 6 C+ CONTROL C- 4 S4 OSC S2 1.25V EN 1 + - VOUT R1 COMP R2 2 GND Figure 3. Functional Block Diagram of AP3602A/B Ordering Information - AP3602 E1: Lead Free Circuit Type TR: Tape and Reel Output Voltage A: 5V B: 4.5V Package Temperature Range SOT-23-6 -40 to 85oC Package K: SOT-23-6 Part Number Marking ID Packing Type AP3602AKTR-E1 E7T Tape & Reel AP3602BKTR-E1 E8T Tape & Reel BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant. Apr. 2007 Rev. 1.2 BCD Semiconductor Manufacturing Limited 3 Data Sheet 100mA REGULATED CHARGE PUMP AP3602A/B Absolute Maximum Ratings (Note 1) Parameter Symbol Value Unit Input Voltage VIN 7 V Output Voltage VO 7 V VSHDN 7 V RθJA 300 oC/W TJ 150 oC TSTG -65 to 150 oC TLEAD 260 oC 2000 V SHDN Pin Voltage Thermal Resistance (Junction to Ambient, no Heat sink) Operating Junction Temperature Storage Temperature Range Lead Temperature (Soldering, 10sec) ESD (Human Body Model) Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods may affect device reliability. Recommended Operating Conditions Parameter Input Voltage Operating Temperature Symbol VIN Min Max AP3602A 2.7 5 AP3602B 2.7 4.5 -40 85 Unit V TA Apr. 2007 Rev. 1.2 oC BCD Semiconductor Manufacturing Limited 4 Data Sheet 100mA REGULATED CHARGE PUMP AP3602A/B Electrical Characteristics (CFLY=1µF, CIN=COUT=10µF, TA=25oC, unless otherwise specified.) For AP3602A Parameter Input Voltage Symbol VIN Quiescent Current IQ Output Voltage VO Shutdown Supply Current ISHDN Conditions Min VO=5V Typ Max Unit VO V 13 30 µA 2.7 VIN=2.7V to 5.0V, IO=0mA, VSHDN =VIN, Not Switching 2.7V<VIN<5V, IO≤50mA 4.8 5.0 5.2 3.0V<VIN<5V, IO≤100mA 4.8 5.0 5.2 0.01 1 2.7V<VIN<3.6V, IO=0, VSHDN =0V 3.6V<VIN<5.0V, IO=0, VSHDN =0V Ripple Voltage VRIPPLE Efficiency η Frequency fOSC SHDN Input Threshold High VIH V µA 2.5 VIN=2.7V, IO=50mA 25 VIN=3V, IO=100mA 30 VIN=2.7V, IO=50mA 92 % Oscillator free running 1.2 MHz mVPP 1.4 V SHDN Input Threshold Low VIL SHDN Input Current High IIH VSHDN =VIN -1 1 SHDN Input Current Low IIL VSHDN =GND -1 1 VOUT Turn-on Time tON VIN=3V, IO=0mA 0.2 ms Short-Circuit Current ISC VIN=3V, VO=GND, VSHDN =3V 300 mA 0.3 Apr. 2007 Rev. 1. 2 µA BCD Semiconductor Manufacturing Limited 5 Data Sheet 100mA REGULATED CHARGE PUMP AP3602A/B Electrical Characteristics (Continued) (CFLY=1µF, CIN=COUT=10µF, TA=25oC, unless otherwise specified.) For AP3602B Parameter Input Voltage Symbol VIN Quiescent Current IQ Output Voltage VO Shutdown Supply Current ISHDN Conditions Min VO=4.5V Typ Max Unit VO V 13 30 µA 2.7 VIN=2.7V to 4.5V, IO=0mA, VSHDN =VIN, Not Switching 2.7V<VIN<4.5V, IO<50mA 4.32 4.5 4.68 3.0V<VIN<4.5V, IO<100mA 4.32 4.5 4.68 0.01 1 2.7V<VIN<3.6V, IO=0, VSHDN =0V 3.6V<VIN<4.5V, IO=0, VSHDN =0V Ripple Voltage VRIPPLE Efficiency η Frequency fOSC SHDN Input Threshold High VIH V µA 2.5 VIN=2.7V, IO=50mA 25 VIN=3V, IO=100mA 30 VIN=2.7V, IO=50mA 83 % Oscillator free running 1.2 MHz mVPP 1.4 V SHDN Input Threshold Low VIL SHDN Input Current High IIH VSHDN =VIN -1 1 SHDN Input Current Low IIL VSHDN =0V -1 1 VOUT Turn-on Time tON VIN=3V, IO=0mA 0.2 ms Short-Circuit Current ISC VIN=3V, VO=GND, VSHDN =3V 300 mA 0.3 Apr. 2007 Rev. 1.2 µA BCD Semiconductor Manufacturing Limited 6 Data Sheet 100mA REGULATED CHARGE PUMP AP3602A/B Application Information divided voltage at the control comparator drops below the preset trip point, the comparator will start the switching cycle again. Operating Principles The AP3602A/B use a switched capacitor charge pump to boost the input voltage to a regulated output voltage. Regulation is achieved by sensing the chip output voltage through an internal resistor divider network. Controlled by an internal comparator (refer to the functional block diagram), the charge pump circuit is enabled when the divided output voltage is below a preset trip point . In idle mode, the AP3602A/B's quiescent current is about 13µA. In shutdown mode, all internal circuitry is turned off and the AP3602A/B draw only leakage current from VIN, which is less than 1µA. So, the shutdown power loss for AP3602A/B is very low, that is beneficial to the battery supplied systems. Short Circuit and Thermal Protection The AP3602A/B have a thermal protection and shutdown circuit that continuously monitors the IC junction temperature. The charge pump operates at 1.2MHz with 50% duty cycle. Conversion consists of a two-phase operation. In the first phase, switches S2 and S3 are opened and S1 and S4 are closed. During this time, CFLY charges to the voltage on VIN and load current is supplied by COUT. During the second phase, S2 and S3 are closed, and S1 and S4 are opened. This action connects CFLY low side to VIN, CFLY high side to VOUT, then a voltage about 2*VIN is used to charge COUT and supply the load current. For each cycle, charges is transported from VIN to VOUT to maintain the output voltage in its nominal value. When output short circuit occurs, the short circuit current is about 300mA (Typical). Under this condition, the IIN is about 2*Iout, which causes about 1.8W instant power dissipation on AP3602A/B, that will cause a rise in the internal IC junction temperature. If the thermal protection circuit senses the junction temperature exceeding approximately 160oC, the thermal shutdown circuit will disable the charge pump switching circuit. The thermal hysteresis is about 10oC, which means that the charge pump circuit can be active when the short circuit is removed and the junction temperature drops below 150oC. This process breaks when the VOUT is high enough for the reason of higher input voltage or lower load, then the divided voltage at the control comparator exceeds the internal trip point high level, which compels the charge pump circuit enter to the idle mode in which the switching cycle stops (pulse skipping) and the output voltage is continually decreased because it is maintained by the discharging of COUT only. In idle mode, the feedback circuit continues sensing VOUT. If the The thermal shutdown protection will cycle on and off if an output short circuit condition persists. This will allow the AP3602A/B to operate on a short circuit condition without latch up or damage to the device. Apr. 2007 Rev. 1.2 BCD Semiconductor Manufacturing Limited 7 Data Sheet 100mA REGULATED CHARGE PUMP AP3602A/B Typical Performance Characteristics 5.2 100 5.0 90 4.8 80 Efficiency (%) Output Voltage (V) Typical Performance Characteristics for AP3602A (Unless otherwise noted, VIN=3.0V, CIN=COUT=10µF, CFLY=1µF Ceramic Cap, TA=25oC) 4.6 4.4 AP3602-5.0V, VIN=3.0V AP3602-5.0V, VIN=2.7V 4.2 25 50 75 70 60 50 4.0 0 AP3602-5.0V, IOUT=25mA AP3602-5.0V, IOUT=50mA AP3602-5.0V, IOUT=100mA 100 125 40 2.5 150 Output Current (mA) 3.0 3.5 4.0 4.5 5.0 Input Voltage (V) Figure 4. Output Voltage vs. Output Current Figure 5. Efficiency vs. Input Voltage VSHDN 2V/div 95.0 92.5 90.0 VSHDN 0V to 3V 85.0 82.5 80.0 VOUT 1V/div Efficiency (%) 87.5 77.5 75.0 AP3602-5.0V, VIN=2.7V AP3602-5.0V, VIN=3.0V 72.5 70.0 0.1 1 10 100 Output Current (mA) Time 40µS/div Figure 7. VOUT Start UpTime, @ No Load Figure 6. Efficiency vs. Output Current Apr. 2007 Rev. 1.2 BCD Semiconductor Manufacturing Limited 8 Data Sheet 100mA REGULATED CHARGE PUMP AP3602A/B Typical Performance Characteristics (Continued) VSHDN 2V/div VSHDN 2V/div Typical Performance Characteristics for AP3602A (Continued) (Unless otherwise noted, VIN=3.0V, CIN=COUT=10µF, CFLY=1µF Ceramic Cap, TA=25oC) VSHDN 0V to 3V VOUT 1V/div VOUT 1V/div VSHDN 0V to 3V Time 40µS/div Time 40µS/div Figure 8. VOUT Start Up Time, @ 50mA Load Figure 9. VOUT Start Up Time, @ 100mA Load IOUT 0mA to 100mA VOUT 50mV/div VOUT 50mV/div IOUT 50mA/div IOUT 50mA/div IOUT 0mA to 50mA Time 200µS/div Time 200µS/div Figure 10. Load Transient Response Figure 11. Load Transient Response Apr. 2007 Rev. 1.2 BCD Semiconductor Manufacturing Limited 9 Data Sheet 100mA REGULATED CHARGE PUMP AP3602A/B Typical Performance Characteristics (Continued) Output Ripple 10mV/div Output Ripple 10mV/div Typical Performance Characteristics for AP3602A (Continued) (Unless otherwise noted, VIN=3.0V, CIN=COUT=10µF, CFLY=1µF Ceramic Cap, TA=25oC) Time 2mS/div Time 400nS/div Figure 13. Output Ripple @ VIN=2.7V, IOUT=50mA Output Ripple 10mV/div Figure 12. Output Ripple @ VIN=2.7V, IOUT=0mA Time 400nS/div Figure 14. Output Ripple @ VIN=2.7V, IOUT=100mA Apr. 2007 Rev. 1.2 BCD Semiconductor Manufacturing Limited 10 Data Sheet 100mA REGULATED CHARGE PUMP AP3602A/B Typical Performance Characteristics (Continued) 4.6 90 4.4 80 Efficiency (%) Output Voltage (V) Typical Performance Characteristics for AP3602B (Unless otherwise noted, VIN=3.0V, CIN=COUT=10µF, CFLY=1µF Ceramic Cap, TA=25oC) 4.2 4.0 AP3602-4.5V, VIN=3.0V AP3602-4.5V, VIN=2.7V 3.8 25 50 75 100 125 70 60 50 40 2.5 3.6 0 AP3602-4.5V, IOUT=25mA AP3602-4.5V, IOUT=50mA AP3602-4.5V, IOUT=100mA 150 Output Current (mA) 3.0 3.5 4.0 4.5 Input Voltage (V) Figure 15. Output Voltage vs. Output Current Figure 16. Efficiency vs. Input Voltage 85.0 IOUT 0mA to 50mA 82.5 IOUT 50mA/div 80.0 75.0 72.5 70.0 VOUT 50mV/div Efficiency (%) 77.5 67.5 65.0 AP3602-4.5V, VIN=2.7V AP3602-4.5V, VIN=3.0V 62.5 60.0 0.1 1 10 100 Output Current (mA) Time 200µS/div Figure 18. Load Transient Response Figure 17. Efficiency vs. Output Current Apr. 2007 Rev. 1.2 BCD Semiconductor Manufacturing Limited 11 IOUT 0mA to 50mA Data Sheet 100mA REGULATED CHARGE PUMP AP3602A/B Typical Performance Characteristics (Continued) Typical Performance Characteristics for AP3602B (Continued) (Unless otherwise noted, VIN=3.0V, CIN=COUT=10µF, CFLY=1µF Ceramic Cap, TA=25oC) VOUT 50mV/div Output Ripple 10mV/div IOUT 50mA/div IOUT 0mA to 100mA Time 200µS/div Time 40mS/div Figure 20. Output Ripple @ VIN=2.7V, IOUT=0mA Output Ripple 10mV/div Output Ripple 10mV/div Figure 19. Load Transient Response Time 1µS/div Time 400nS/div Figure 21. Output Ripple @ VIN=2.7V, IOUT=50mA Figure 22. Output Ripple @ VIN=2.7V, IOUT=100mA Apr. 2007 Rev. 1.2 BCD Semiconductor Manufacturing Limited 12 Data Sheet 100mA REGULATED CHARGE PUMP AP3602A/B Typical Performance Characteristics (Continued) 20 20 18 16 Supply Current (µA) Supply Current (µA) Typical Performance Characteristics for AP3602A/B (Unless otherwise noted, VIN=3.0V, CIN=COUT=10µF, CFLY=1µF Ceramic Cap, TA=25oC) 16 14 12 12 8 VIN=2.7V VIN=3.0V 4 No Load, Not Switching 10 2.5 3.0 3.5 4.0 4.5 0 5.0 0 1 2 Supply Voltage (V) Figure 23. Supply Current vs. Supply Voltage 1700 0.75 Normalized Output Voltage (%) 1.00 1600 Frequency (kHz) 4 5 Figure 24. Supply Current vs. SHDN Voltage 1800 1500 1400 1300 1200 o TA=-50 C 0.50 0.25 0.00 -0.25 -0.50 -0.75 o TA=25 C 1100 3 SHDN Voltage (V) VIN=3.0V, IOUT=25mA o TA=100 C 1000 2.5 3.0 3.5 4.0 4.5 -1.00 -50 5.0 -25 0 25 50 75 100 o Temperature ( C) Supply Voltage (V) Figure 25. Oscillator Frequency vs. Supply Voltage Figure 26. Normalized Output Voltage vs. Temperature Apr. 2007 Rev. 1.2 BCD Semiconductor Manufacturing Limited 13 Data Sheet 100mA REGULATED CHARGE PUMP AP3602A/B Typical Performance Characteristics (Continued) Typical Performance Characteristics for AP3602A/B (Continued) (Unless otherwise noted, VIN=3.0V, CIN=COUT=10µF, CFLY=1µF Ceramic Cap, TA=25oC) 1.0 SHDN Input Threshold Low Voltage (V) SHDN Input Threshold High Voltage (V) 1.0 0.9 0.8 0.7 o TA=-40 C 0.6 o TA=25 C o TA=85 C 0.5 2.5 3.0 3.5 4.0 4.5 0.9 0.8 0.7 o o TA=25 C o TA=85 C 0.5 2.5 5.0 TA=-40 C 0.6 3.0 3.5 4.0 4.5 5.0 Input Voltage (V) Input Voltage (V) Figure 27. VIH vs. VIN Figure 28. VIL vs. VIN Apr. 2007 Rev. 1.2 BCD Semiconductor Manufacturing Limited 14 Data Sheet 100mA REGULATED CHARGE PUMP AP3602A/B Typical Application 1µF VIN=2.7V to 4.2V VIN C+ C- AP3602A SHDN 4 * 120Ω VOUT GND 10µF 10µF LED's VF=3.2V Figure 29. AP3602A/B-5.0V Typical Application Circuit 1µF VIN=2.7V to 4.2V VIN SHDN C+ C- AP3602B 4 * 91Ω VOUT GND 10µF 10µF LED's VF=3.2V Figure 30. AP3602A/B-4.5V Typical Application Circuit Apr. 2007 Rev. 1. 2 BCD Semiconductor Manufacturing Limited 15 Data Sheet 100mA REGULATED CHARGE PUMP AP3602A/B Mechanical Dimensions SOT-23-6 Unit: mm(inch) 0° 2.820(0.111) 8° 3.020(0.119) 0.300(0.012) 0.400(0.016) 5 0.300(0.012) 0.600(0.024) 4 1.500(0.059) 1.700(0.067) 2.650(0.104) 2.950(0.116) 6 0.200(0.008) Pin 1 Dot by Marking 1 2 3 0.700(0.028)REF 0.950(0.037)TYP 0.000(0.000) 0.100(0.004) 1.800(0.071) 2.000(0.079) 0.100(0.004) 0.200(0.008) 1.050(0.041) 1.050(0.041) 1.150(0.045) 1.250(0.049) Apr. 2007 Rev. 1.2 BCD Semiconductor Manufacturing Limited 16 http://www.bcdsemi.com IMPORTANT NOTICE BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifications herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or other rights nor the rights of others. MAIN SITE BCD Semiconductor Manufacturing Limited BCD Semiconductor Manufacturing Limited - Wafer Fab Shanghai SIM-BCD Semiconductor Manufacturing Limited 800, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6485 1491, Fax: +86-21-5450 0008 - IC Design Group Advanced Analog Circuits (Shanghai) Corporation 8F, Zone B, 900, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6495 9539, Fax: +86-21-6485 9673 REGIONAL SALES OFFICE Shenzhen Office Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd. Shenzhen Office Advanced Analog Circuits (Shanghai) Corporation Shenzhen Office Room E, 5F, Noble Center, No.1006, 3rd Fuzhong Road, Futian District, Shenzhen 518026, China Tel: +86-755-8826 7951 Fax: +86-755-8826 7865 Taiwan Office BCD Semiconductor (Taiwan) Company Limited 4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei, Taiwan Tel: +886-2-2656 2808 Fax: +886-2-2656 2806 USA Office BCD Semiconductor Corporation 30920 Huntwood Ave. Hayward, CA 94544, U.S.A Tel : +1-510-324-2988 Fax: +1-510-324-2788