Data Sheet DUAL OP AMP AND VOLTAGE REFERENCE AP4310 General Description Features The AP4310 is a monolithic IC specifically designed to regulate the output current and voltage levels of switching battery chargers and power supplies. Op Amp · Input Offset Voltage: 0.5mV · Supply Current: 75µA per Op Amp at 5.0V Supply Voltage · Unity Gain Bandwidth: 1MHz · Output Voltage Swing: 0 to (VCC -1.5) V The device contains two Op Amps and a 2.5V precision shunt voltage reference. Op Amp 1 is designed for voltage control with its non-inverting input internally connects to the output of the shunt regulator. Op Amp 2 is for current control with both inputs uncommitted. The IC offers the power converter designer a control solution that features increased precision with a corresponding reduction in system complexity and cost. · Power Supply Range: 3 to 36V Voltage Reference · Fixed Output Voltage Reference: 2.5V · Voltage Tolerance: ± 0.4%, ± 1% · Sink Current Capability: 0.05 to 80mA · Typical Output Impedance: 0.2Ω The AP4310 is available in standard packages of DIP8 and SOIC-8. Applications · · SOIC-8 Battery Charger Switching Power Supply DIP-8 Figure 1. Package Types of AP4310 Jul. 2006 Rev. 1. 3 BCD Semiconductor Manufacturing Limited 1 Data Sheet DUAL OP AMP AND VOLTAGE REFERENCE AP4310 Pin Configuration M Package/P Package (SOIC-8/DIP-8) OUTPUT 1 1 8 VCC INPUT 1- 2 7 OUTPUT 2 INPUT 1+ / VKA 3 6 INPUT 2- GND 4 5 INPUT 2+ Top View Figure 2. Pin Configuration of AP4310 Functional Block Diagram OUTPUT 1 1 INPUT 1- 2 INPUT 1+ / VKA 3 Op Amp 1 - 8 VCC 7 OUTPUT 2 6 INPUT 2- 5 INPUT 2+ + + Op Amp 2 GND 4 Figure 3. Functional Block Diagram of AP4310 Jul. 2006 Rev. 1. 3 BCD Semiconductor Manufacturing Limited 2 Data Sheet DUAL OP AMP AND VOLTAGE REFERENCE AP4310 Ordering Information AP4310 E1: Lead Free Blank: Tin Lead Circuit Type TR: Tape and Reel Blank: Tube Voltage Tolerance A: ± 0.4% Blank: ± 1% Package Reference Voltage DIP-8 2.5V Voltage Tolerance ± 0.4% ± 1% ± 0.4% SOIC-8 2.5V ± 1% Temperature Range -40 to105oC Package M: SOIC-8 P: DIP-8 Part Number Tin Lead Marking ID Lead Free Packing Type Lead Free Tin Lead AP4310AP AP4310AP-E1 AP4310AP AP4310AP-E1 AP4310P AP4310P-E1 AP4310P AP4310P-E1 AP4310AM-E1 4310AM AP4310AM-E1 AP4310AMTR-E1 4310AM AP4310AM-E1 Tape & Reel Tube -40 to105oC AP4310AM AP4310AMTR -40 to105oC AP4310M AP4310MTR Tube AP4310M-E1 4310M AP4310M-E1 Tube AP4310MTR-E1 4310M AP4310M-E1 Tape & Reel BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant. Jul. 2006 Rev. 1. 3 BCD Semiconductor Manufacturing Limited 3 Data Sheet DUAL OP AMP AND VOLTAGE REFERENCE AP4310 Absolute Maximum Ratings (Note 1) Parameter Symbol Value Unit Power Supply Voltage (VCC to GND) VCC 40 V Op Amp 1 and 2 Input Voltage Range (Pins 2, 5, 6) VIN -0.3 to VCC+0.3 V Op Amp 2 Input Differential Voltage (Pins 5, 6) VID 40 V IK 100 mA Voltage Reference Cathode Current (Pin 3) Power Dissipation (TA=25oC) PD Operating Junction Temperature Storage Temperature Range Lead Temperature (Soldering 10s) DIP-8 800 SOIC-8 500 mW TJ 150 TSTG -65 to 150 o TLEAD 260 o o C C C Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods may affect device reliability. Recommended Operating Conditions Parameter Supply Voltage Ambient Temperature Jul. 2006 Rev. 1. 3 Min Max Unit 3 36 V -40 105 o C BCD Semiconductor Manufacturing Limited 4 Data Sheet DUAL OP AMP AND VOLTAGE REFERENCE AP4310 Electrical Characteristics Operating Conditions: VCC =+5V, TA=25oC unless otherwise specified. Parameter Conditions Min Total Supply Current, excluding Cur- V =5V, no load, -40oC≤T ≤105oC CC A rent in Voltage Reference VCC=30V, no load, -40oC≤TA≤105oC Typ Max 0.15 0.25 0.20 0.30 Unit mA Voltage Reference Section AP4310A Reference Voltage IK=10mA AP4310 Reference Voltage Deviation Over Full Temperature Range TA=25oC 2.49 2.50 2.51 -40oC≤TA≤105oC 2.48 2.50 2.52 TA=25oC 2.475 2.50 2.525 -40oC≤TA≤105oC 2.45 2.50 2.55 5 24 mV 0.01 0.05 mA 0.2 0.5 Ω 0.5 3 V V IK=10mA, TA=-40 to 105oC Minimum Cathode Current for Regulation Dynamic Impedance IK=1.0 to 80mA, f<1kHz Op Amp 1 Section (VCC=5V, VO=1.4V, TA=25oC, unless otherwise noted) TA=25oC Input Offset Voltage TA=-40 to Input Offset Voltage Temperature Drift mV 5 105oC µV/oC 7 TA=-40 to 105oC Input Bias Current (Inverting Input T =25oC A Only) 20 150 nA Large Signal Voltage Gain VCC=15V, RL=2kΩ, VO=1.4 to 11.4V 85 100 dB Power Supply Rejection Ratio VCC=5 to 30V 70 90 dB Source VCC=15V, VID =1V, VO=2V 20 40 mA Sink VCC=15V, VID=-1V, VO=2V 7 20 mA Output Voltage Swing (High) VCC=30V, RL=10kΩ, VID=1V 27 28 V Output Voltage Swing (Low) VCC=30V, RL =10kΩ, VID=-1V Slew Rate VCC=18V, RL=2kΩ, AV =1, VIN=0.5 to 2V, CL =100pF 0.2 0.5 V/µ s Unity Gain Bandwidth VCC=30V, RL =2kΩ, CL=100pF 0.7 1.0 MHz Output Current Jul. 2006 Rev. 1. 3 17 100 mV BCD Semiconductor Manufacturing Limited 5 Data Sheet DUAL OP AMP AND VOLTAGE REFERENCE AP4310 Electrical Characteristics (Continued) Operating Conditions: VCC=+5V, TA=25oC unless otherwise specified. Parameter Conditions Min Typ Max 0.5 3 Unit Op Amp 2 Section (VCC=5V, VO=1.4V, TA=25oC, unless otherwise noted) TA=25oC Input Offset Voltage mV 5 TA=-40 to 105oC µV/oC Input Offset Voltage Temperature T =-40 to 105oC A Drift 7 Input Offset Current TA=25oC 2 30 nA Input Bias Current TA=25oC 20 150 nA Input Voltage Range VCC=0 to 36V 0 VCC-1.5 V Common Mode Rejection Ratio TA=25oC, VCM =0 to 3.5V 70 85 dB Large Signal Voltage Gain VCC=15V, RL =2kΩ, VO=1.4 to 11.4V 85 100 dB Power Supply Rejection Ratio VCC=5 to 30V 70 90 dΒ Source VCC=15V, VID=1V, VO=2V 20 40 mA Sink VCC=15V, VID=-1V, VO=2V 7 20 mA Output Voltage Swing (High) VCC=30V, RL =10kΩ, VID=1V 27 28 V Output Voltage Swing (Low) VCC=30V, RL =10kΩ, VID=-1V Slew Rate VCC=18V, RL=2kΩ, AV=1, VIN =0.5 to 2V, CL =100pF 0.2 0.5 V/µ s Unity Gain Bandwidth VCC=30V, RL=2kΩ, CL=100pF 0.7 1.0 MHz Output Current Jul. 2006 Rev. 1. 3 17 100 mV BCD Semiconductor Manufacturing Limited 6 Data Sheet DUAL OP AMP AND VOLTAGE REFERENCE AP4310 Typical Performance Characteristics 2.510 150 Cathode Current (mA) Reference Voltage (V) 2.505 2.500 2.495 2.490 0 TA=25 C 50 0 -50 2.485 2.480 -40 VKA=VREF 100 -20 0 20 40 60 80 100 -100 -2 120 -1 0 o 1 2 3 Cathode Voltage (V) Ambient Temperature ( C) Figure 4. Reference Voltage vs. Ambient Temperature Figure 5. Cathode Current vs. Cathode Voltage 30 110 25 20 Voltage Gain(dB) Input Bias Current (nA) 100 15 10 80 RL=2KΩ RL=20KΩ 70 5 0 -40 90 -20 0 20 40 60 80 100 60 120 0 o 2 4 6 8 10 12 14 16 18 20 Supply Voltage (V) Ambient Temperature ( C) Figure 6. Input Bias Current vs. Ambient Temperature Jul. 2006 Rev. 1. 3 Figure 7. Op Amp Voltage Gain BCD Semiconductor Manufacturing Limited 7 Data Sheet DUAL OP AMP AND VOLTAGE REFERENCE AP4310 Typical Application R1 R6 Opto Isolator AC Line Battery Pack Op Amp 2 SMPS + R4 R3 Current Sense R7 R5 - R2 Op Amp 1 + R8 AP4310 Figure 8. Application of AP4310 in a Constant Current and Constant Voltage Charger Jul. 2006 Rev. 1. 3 BCD Semiconductor Manufacturing Limited 8 Data Sheet DUAL OP AMP AND VOLTAGE REFERENCE AP4310 Mechanical Dimensions: DIP-8 Unit: mm(inch) 0.700(0.028) 7.620(0.300)TYP 1.524(0.060) TYP 6° 5° 6° 3.200(0.126) 3.600(0.142) 3.710(0.146) 4.310(0.170) 4° 4° 0.510(0.020)MIN 3.000(0.118) 3.600(0.142) 0.204(0.008) 0.360(0.014) 8.200(0.323) 9.400(0.370) 0.254(0.010)TYP 2.540(0.100) TYP 0.360(0.014) 0.560(0.022) 0.130(0.005)MIN 6.200(0.244) 6.600(0.260) R0.750(0.030) Φ3.000(0.118) Depth 0.100(0.004) 0.200(0.008) 9.000(0.354) 9.400(0.370) Jul. 2006 Rev. 1. 3 BCD Semiconductor Manufacturing Limited 9 Data Sheet DUAL OP AMP AND VOLTAGE REFERENCE AP4310 Mechanical Dimensions (Continued): SOIC-8 Unit: mm(inch) 4.800(0.189) 5.000(0.197) 7° 0.320(0.013) 1.350(0.053) 1.750(0.069) 8° 8° 7° 0.675(0.027) 0.725(0.029) D 5.800(0.228) 1.270(0.050) 6.200(0.244) TYP D 20:1 0.300(0.012) R0.150(0.006) 0.100(0.004) φ 0.800(0.031) 0.200(0.008) 0° 8° 1.000(0.039) 3.800(0.150) 4.000(0.157) 1° 5° 0.330(0.013) 0.510(0.020) 0.900(0.035) R0.150(0.006) 0.190(0.007) 0.250(0.010) Jul. 2006 Rev. 1. 3 BCD Semiconductor Manufacturing Limited 10 http://www.bcdsemi.com IMPORTANT NOTICE BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifications herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or other rights nor the rights of others. MAIN SITE BCD Semiconductor Manufacturing Limited BCD Semiconductor Manufacturing Limited - Wafer Fab Shanghai SIM-BCD Semiconductor Manufacturing Limited 800, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6485 1491, Fax: +86-21-5450 0008 - IC Design Group Advanced Analog Circuits (Shanghai) Corporation 8F, Zone B, 900, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6495 9539, Fax: +86-21-6485 9673 REGIONAL SALES OFFICE Shenzhen Office Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd. 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