Data Sheet DUAL LOW NOISE OPERATIONAL AMPLIFIERS AZ4580 General Description Features The AZ4580 is a monolithic dual low noise operational amplifier. It is specifically designed for audio systems to improve tone control; it can also be used in preamplifier, industrial measurement tools and applications where gain and phase matched channels are mandatory. · · Large Signal Voltage Gain: 110dB Typical Low Input Noise Voltage: 0.7μVRMS (RIAA) Typical · Wide Gain Bandwidth Product: 15MHz at 10KHz Typical Low Distortion: 0.0005% Typical Slew Rate: 7V/μs Typical · · The IC features internal frequency compensation, low noise, low distortion, high gain and high bandwidth. The AZ4580 can operate under dual power supply voltage up to ±18V or single power supply up to 36V. Applications · · The AZ4580 is available in DIP-8, SOIC-8 and TSSOP-8 packages. SOIC-8 Audio AC-3 Decoder System Audio Amplifier TSSOP-8 DIP-8 Figure 1. Package Types of AZ4580 Jan. 2013 Rev. 2. 3 BCD Semiconductor Manufacturing Limited 1 Data Sheet DUAL LOW NOISE OPERATIONAL AMPLIFIERS AZ4580 Pin Configuration M/G Package (SOIC-8/TSSOP-8) P Package (DIP-8) OUTPUT 1 1 8 VCC INPUT 1- 2 7 OUTPUT 2 INPUT 2- INPUT 1+ 3 6 INPUT 2- INPUT 2+ VEE 4 5 INPUT 2+ OUTPUT 1 1 8 VCC INPUT 1- 2 7 OUTPUT 2 INPUT 1+ 3 6 VEE 4 5 Figure 2. Pin Configuration of AZ4580 Pin Description Pin No. Function Pin No. Function Pin No. Function Pin No. Function 1 OUTPUT 1 2 INPUT 1- 3 INPUT 1+ 4 VEE 5 INPUT 2+ 6 INPUT 2- 7 OUTPUT 2 8 VCC Jan. 2013 Rev. 2. 3 BCD Semiconductor Manufacturing Limited 2 Data Sheet DUAL LOW NOISE OPERATIONAL AMPLIFIERS AZ4580 Functional Block Diagram VCC INPUT INPUT + VEE 8 2, 6 1, 7 OUTPUT 3, 5 4 Figure 3. Representative Schematic Diagram of AZ4580 (Each Amplifier) Jan. 2013 Rev. 2. 3 BCD Semiconductor Manufacturing Limited 3 Data Sheet DUAL LOW NOISE OPERATIONAL AMPLIFIERS AZ4580 Ordering Information AZ4580 - Circuit Type E1: Lead Free G1: Green Package TR: Tape and Reel Blank: Tube M: SOIC-8 P: DIP-8 G: TSSOP-8 Package Temperature Range SOIC-8 -40 to 85oC DIP-8 -40 to 85oC TSSOP-8 -40 to 85o C Part Number Lead Free Marking ID Green Lead Free Green Packing Type AZ4580M-E1 AZ4580M-G1 4580M-E1 4580M-G1 Tube AZ4580MTR-E1 AZ4580MTR-G1 4580M-E1 4580M-G1 Tape & Reel AZ4580P-E1 AZ4580P-G1 AZ4580P-E1 AZ4580P-G1 AZ4580GTR-E1 AZ4580GTR-G1 EG80 GG80 Tube Tape & Reel BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant. Products with "G1" suffix are available in green packages. Jan. 2013 Rev. 2. 3 BCD Semiconductor Manufacturing Limited 4 Data Sheet DUAL LOW NOISE OPERATIONAL AMPLIFIERS AZ4580 Absolute Maximum Ratings (Note 1) Parameter Smbol Value VCC + 20 VEE - 20 Input Voltage VI ± 15 V Differential Input Voltage VID ± 30 V TJ 150 TSTG -65 to 150 o TL 260 o Power Supply Voltage Operating Junction Temperature Storage Temperature Range Lead Temperature (Soldering 10s) o Power Dissipation (TA=25 C) PD Unit V o C C C TSSOP-8 400 SOIC-8 500 DIP-8 800 mW Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods may affect device reliability. Recommended Operating Conditions Parameter Min Max Unit Supply Voltage ±2 ± 18 V Operating Temperature Range -40 85 oC Jan. 2013 Rev. 2. 3 BCD Semiconductor Manufacturing Limited 5 Data Sheet DUAL LOW NOISE OPERATIONAL AMPLIFIERS AZ4580 Electrical Characteristics Operating Conditions: VCC=+15V, VEE=- 15V, TA=25oC unless otherwise specified. Parameter Conditions Min Typ Max Unit 4 7 mA Supply Current no load Input Offset Voltage RS≤10KΩ 0.5 3 mV Input Offset Current VCM=0V 5 100 nA Input Bias Current VCM=0V 150 500 nA Input Common Mode Voltage Range ±12 ±13.5 V Common Mode Rejection Ratio VCM=0V to VCC-1.5V, RS≤10KΩ 80 110 dB Large Signal Voltage Gain RL=2KΩ, VO=±10V 90 110 dB Power Supply Rejection Ratio RS≤10KΩ 80 110 dB Output Sink Current V-=1V, V+=0V, VO=2V 80 mA Output Source Current V+=1V, V-=0V, VO=2V 45 mA Slew Rate RL≥2KΩ 7 V/μS Gain Bandwidth Product RL=2KΩ, f=10KHz 15 MHz Total Harmonic Distortion AV=20dB, VO=5V RL=2KΩ, f=1KHz 0.0005 % Equivalent Input Noise Voltage RIAA RS=50Ω, 30KHz LPF 0.7 μVRMS Thermal Resistance (Junction to Case) DIP-8 43 SOIC-8 63 Jan. 2013 Rev. 2. 3 oC/W BCD Semiconductor Manufacturing Limited 6 Data Sheet DUAL LOW NOISE OPERATIONAL AMPLIFIERS AZ4580 Typical Performance Characteristics 30 120 Maximum Output Voltage Swing (V) Open Loop Voltage Gain (dB) 110 VCC= 15V, VEE= -15V 100 o RL=2KΩ, TA=25 C 90 80 70 60 50 40 30 20 25 VCC= 15V, VEE= -15V 20 o RL=2KΩ, TA=25 C 15 10 5 10 0 1 10 100 1k 10k 100k 1M 0 100 10M 1k 10k Figure 4. Open Loop Voltage Gain vs. Frequency 1M 10M Figure 5. Maximum Output Voltage Swing vs. Frequency 20 Equivalent Input Noise Voltage Density 0.5 (nV/(Hz) ) 30 28 Maximum Output Voltage Swing (V) 100k Frequency (Hz) Frequency (Hz) 26 24 VCC= 15V, VEE= -15V, 22 o TA=25 C 20 18 16 14 15 VCC= 15V, VEE= -15V o RS=50Ω, TA=25 C 10 5 12 0 0.1 1 10 Load Resistance (KΩ) 1 10 100 1k Frequency (Hz) Figure 6. Maximum Output Voltage Swing vs. Load Resistance Figure 7. Equivalent Input Noise Voltage Density vs. Frequency Jan. 2013 Rev. 2. 3 BCD Semiconductor Manufacturing Limited 7 Data Sheet DUAL LOW NOISE OPERATIONAL AMPLIFIERS AZ4580 Typical Performance Characteristics (Continued) 200 2.0 Input Bias Current (nA) Input Offset Voltage (mV) 1.5 VCC=15V VEE=-15V 1.0 0.5 0.0 150 VCC=15V VEE=-15V 100 50 -0.5 -1.0 -25 0 25 50 75 100 0 -40 125 -20 0 20 40 60 80 100 120 o Ambient Temperature ( C) o Ambient Temperature ( C) Figure 8. Input Offset Voltage vs.Temperature Figure 9. Input Bias Current vs.Temperature Typical Applications VO 10μF 6.2K 20K 8 6 7 5 + AZ4580 + 2 1 4 3 D2 15K 20K 20K 20K 10K D1 VIN Figure 10. Application of AZ4580 in an AC/DC Converter Jan. 2013 Rev. 2. 3 BCD Semiconductor Manufacturing Limited 8 Data Sheet DUAL LOW NOISE OPERATIONAL AMPLIFIERS AZ4580 Typical Applications (Continued) 33μF + Phono Cartridge 470 10μF 1/2AZ4580 100pF - 47K 100K 16K 200K 390 4.7nF 100μF 15nF Figure 11. Application of AZ4580 in a RIAA Preamp BOOST -BASS-CUT R1 11K Vi R2 100K R3 11K C1 0.05μF C2 0.05μF R4 11K - C3 0.005μF R5 3.6K 1/2 AZ4580 + VO R6 500K R7 3.6K BOOST -TREBLE-CUT Figure 12. Application of AZ4580 in Tone Control Jan. 2013 Rev. 2. 3 BCD Semiconductor Manufacturing Limited 9 Data Sheet DUAL LOW NOISE OPERATIONAL AMPLIFIERS AZ4580 Mechanical Dimensions DIP-8 Unit: mm(inch) 0.700(0.028) 7.620(0.300)TYP 1.524(0.060) TYP 6° 3.200(0.126) 3.600(0.142) 3.710(0.146) 4.310(0.170) 4° 4° 0.510(0.020)MIN 3.000(0.118) 3.600(0.142) 0.204(0.008) 0.360(0.014) 8.200(0.323) 9.400(0.370) 0.254(0.010)TYP 0.360(0.014) 0.560(0.022) 5° 6° 2.540(0.100) TYP 0.130(0.005)MIN 6.200(0.244) 6.600(0.260) R0.750(0.030) Φ3.000(0.118) Depth 0.100(0.004) 0.200(0.008) 9.000(0.354) 9.600(0.378) Note: Eject hole, oriented hole and mold mark is optional. Jan. 2013 Rev. 2. 3 BCD Semiconductor Manufacturing Limited 10 Data Sheet DUAL LOW NOISE OPERATIONAL AMPLIFIERS AZ4580 Mechanical Dimensions (Continued) SOIC-8 4.700(0.185) 5.100(0.201) 7° Unit: mm(inch) 0.320(0.013) 1.350(0.053) 1.750(0.069) 8° 8° 7° 0.675(0.027) 0.725(0.029) D 5.800(0.228) 1.270(0.050) 6.200(0.244) TYP D 20:1 0.100(0.004) R0.150(0.006) 0.300(0.012) 0.800(0.031) φ 0.200(0.008) 0° 8° 1.000(0.039) 3.800(0.150) 4.000(0.157) 0.330(0.013) 0.510(0.020) 0.190(0.007) 0.250(0.010) 0.900(0.035) 1° 5° R0.150(0.006) 0.450(0.017) 0.800(0.031) Note: Eject hole, oriented hole and mold mark is optional. Jan. 2013 Rev. 2. 3 BCD Semiconductor Manufacturing Limited 11 Data Sheet DUAL LOW NOISE OPERATIONAL AMPLIFIERS AZ4580 Mechanical Dimensions (Continued) TSSOP-8 Unit: mm(inch) SEE DETAIL A 2.900(0.114) 3.100(0.122) 0.050(0.002) 0.150(0.006) 0.090(0.004) 0.200(0.008) 1.200(0.047) MAX 0.800(0.031) 1.050(0.041) 12 ° TOP & BOTTOM GAGE PLANE TYP 6.400(0.252) 4.500(0.177) R0.090(0.004) 0° 8° 0.650(0.026) TYP 0.400(0.016) 4.300(0.169) R0.090(0.004) 0.450(0.018) 0.750(0.030) SEATING PLANE 0.190(0.007) 0.300(0.012) 1.000(0.039) REF 0.250(0.010) TYP 1.950(0.077) TYP DETAIL A Note: Eject hole, oriented hole and mold mark is optional. Jan. 2013 Rev. 2. 3 BCD Semiconductor Manufacturing Limited 12 BCD Semiconductor Manufacturing Limited http://www.bcdsemi.com IMPORTANT NOTICE IMPORTANT NOTICE BCD Semiconductor BCD Semiconductor Manufacturing Manufacturing Limited Limited reserves reserves the the right right to to make make changes changes without without further further notice notice to to any any products products or or specifispecifications herein. cations herein. BCD BCD Semiconductor Semiconductor Manufacturing Manufacturing Limited Limited does does not not assume assume any any responsibility responsibility for for use use of of any any its its products products for for any any particular purpose, particular purpose, nor nor does does BCD BCD Semiconductor Semiconductor Manufacturing Manufacturing Limited Limited assume assume any any liability liability arising arising out out of of the the application application or or use use of any of any its its products products or or circuits. circuits. BCD BCD Semiconductor Semiconductor Manufacturing Manufacturing Limited Limited does does not not convey convey any any license license under under its its patent patent rights rights or or other rights other rights nor nor the the rights rights of of others. others. MAIN SITE SITE MAIN - Headquarters BCD Semiconductor Manufacturing Limited BCD Semiconductor Manufacturing Limited - Wafer Fab No. 1600, Zi Xing Road, Shanghai ZiZhu Science-basedLimited Industrial Park, 200241, China Shanghai SIM-BCD Semiconductor Manufacturing Tel: Fax: +86-21-24162277 800,+86-21-24162266, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6485 1491, Fax: +86-21-5450 0008 REGIONAL SALES OFFICE Shenzhen OfficeSALES OFFICE REGIONAL - Wafer FabSemiconductor Manufacturing Limited BCD Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd. - IC Design Group 800 Yi Shan Road, Shanghai 200233, China Corporation Advanced Analog Circuits (Shanghai) Tel: +86-21-6485 1491,YiFax: 0008200233, China 8F, Zone B, 900, Shan+86-21-5450 Road, Shanghai Tel: +86-21-6495 9539, Fax: +86-21-6485 9673 Taiwan Office Shanghai Semiconductor Manufacturing Co., Ltd., Shenzhen Office BCD Taiwan Semiconductor Shenzhen SIM-BCD Office Office (Taiwan) Company Limited Unit A Room 1203, Skyworth Bldg., Gaoxin Ave.1.S., Nanshan Shenzhen, 4F, 298-1, Guang Road,(Taiwan) Nei-Hu District, Taipei, Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd.District, Shenzhen Office BCDRui Semiconductor Company Limited China Taiwan Advanced Analog Circuits (Shanghai) Corporation Shenzhen Office 4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei, Tel: +86-755-8826 Tel: +886-2-2656 2808 Room E, 5F, Noble 7951 Center, No.1006, 3rd Fuzhong Road, Futian District, Shenzhen 518026, China Taiwan Fax: +86-755-88267951 7865 Fax: +886-2-2656 28062808 Tel: +86-755-8826 Tel: +886-2-2656 Fax: +86-755-8826 7865 Fax: +886-2-2656 2806 USA Office BCD Office Semiconductor Corp. USA 30920Semiconductor Huntwood Ave.Corporation Hayward, BCD CA 94544, USA Ave. Hayward, 30920 Huntwood Tel :94544, +1-510-324-2988 CA U.S.A Fax:: +1-510-324-2988 +1-510-324-2788 Tel Fax: +1-510-324-2788