8700 E. Thomas Road Scottsdale, AZ 85252 (480) 941-6300 TM IGBTVS AC LINE TRANSIENT VOLTAGE SUPPRESSOR Features (FOR IGBT PROTECTION) From Load Switching In AC Applications • Protects For 120Vac, and 440Vac Circuits • Fits Terminal240Vac Spacing on Most IGBTs • Fast Clamping – Subnanosecond • These devices will protect your IGBT in applications where it is used in overload protection or switching ac loads. Transient voltages produced when switching occurs in the positive one-half of the cycle are clamped below the destruct level of the IGBT. Unique low inductance shunt path virtually eliminates L(di/dt) effects. Available as screened device for high reliability applications. Includes burn-in and environmental tests. SC M BT IG Maximum Ratings @ 25°C peak pulse power dissipation for 120V @ 1.2/50µs • 60kw peak pulse power dissipation for 240V @ 1.2/50µs • 120kw peak pulse power dissipation for 440V @ 1.2/50µs • 240kw and storage -55°C to +150°C • Operating path inductance < 20nH • Shunt • Duty cycle – .01% max. 1.00 2.54 + Hole to fit 8mm dia. stud Electrical Characteristics @ 25°C MICROSEMI PART NO. DMA12 DMA24 DMA44 AC rms OPERATING VOLTAGE NOMINAL Vac REVERSE STAND-OFF NOTE 1 (VWM) Vdc BREAKDOWN VOLTAGE MIN / MAX (VBR) NOTE 2 V MAXIMUM REVERSE LEAKAGE (ID) µA MAXIMUM CLAMPING VOLTAGE (VC) V MAXIMUM PEAK PULSE CURRENT (IPP) NOTE 3 A 120 240 440 175 350 640 200 / 225 400 / 450 735 / 900 5 5 5 280 560 1120 200 200 200 Notes: 1.Will withstand high-line conditions of 15% above nominal voltage. 2.Test current @ 10 mA. 3.Pulse waveform – 1.2 / 50 µs. 0.5 1.25 d 0.5 1.25 .375 .952 2.00 5.08 Dimensions: inches/centimeters d – Terminals accommodate 23 -28 mm spacing CASE: Molded plastic, meets UL 94V-O POLARITY: Cathode marked with + INDUCTANCE: Less than 20 nH TERMINALS: Corrosion resistant with hole spacings to accommodate most high power IGBTs n Santa Ana: (714) 979-8220 n Scottscale: (602) 941-6300 n Colorado: (303) 469-2161 n Watertown: (617) 926-0404 n Chatsworth: (818) 701-4933 n Sertech Labs: (617) 924-9280 n Ireland: (353) 65-40044 n Bombay: (91) 22-832-002 n Hong Kong: (852) 2692-1202 Data Sheet MSC0294A 6/3/97 TM Application Notes for IGBTVS Microsemi’s IGBTVS protector is intended for transients produced during load switching with a duty cycle not to exceed .01%. For protecting against transients produced when IGBTs are applied as ac power switches and over current protectors. Stored energy in the line and load produces damaging transient voltages during power down or fault interrupt. Microsemi’s IGBTVS transient suppressor protects from nanosecond rise transients with surge currents to 200A, 1.5/50µs. Typical application on a 3 B power line is illustrated below. TM TM 1. CONCEPT TVS LINE R & L ac POWER FROM SERVICE ENTRY TO LOAD IGBT 2. DETAILS OF SINGLE PHASE PROTECTION CONTROL MODULE IGBTVSTM LINE R & L IGBT AC LINE IN IGBT LOAD GATE DRIVE 3. COMPOSITE 3 PHASE PROTECTION Each control module contains IGBTs, gate drive and two IGBTVSTM as illustrated by #2 above B1 AC IN B2 B3 LINE R & L LINE R & L LOAD LINE R & L