BILIN MMBT3904

BL Galaxy Electrical
Production specification
NPN SWITCHING TRANSISTOR
FEATURES
z
Epitaxial planar die construction.
z
Complementary PNP type available
MMBT3904
Pb
Lead-free
(MMBT3906).
z
Collector Current Capability Ic=200mA.
z
Collector-emitter Voltage VCEO=40V.
APPLICATIONS
z
General switching and amplification
SOT-23
ORDERING INFORMATION
Type No.
MMBT3904
Marking
Package Code
1AM
SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
VCBO
collector-base voltage
open emitter
60
-
V
VCEO
collector-emitter voltage
open base
40
-
V
VEBO
emitter-base voltage
open collector
6
-
V
IC
collector current (DC)
-
200
mA
ICM
peak collector current
-
200
mA
IBM
peak base current
-
100
mA
Ptot
total power dissipation
-
250
mW
Tstg
storage temperature
-65
+150
°C
Tj
junction temperature
-
150
°C
Tamb
operating ambient temperature
-65
+150
°C
Note
Tamb≤25°C
MAX.
UNIT
Transistor mounted on an FR4 printed-circuit board.
Document number: BL/SSSTC061
Rev.A
www.galaxycn.com
1
BL Galaxy Electrical
Production specification
NPN SWITCHING TRANSISTOR
MMBT3904
ELECTRICAL CHARACTERISTICS @ Ta=25℃
SYMBOL
PARAMETER
CONDITIONS
ICBO
collector cut-off current
IEBO
unless otherwise specified
MIN.
MAX.
IE = 0; VCB = 30 V
-
50
nA
emitter cut-off current
IC = 0; VEB = 6 V
-
50
nA
hFE
DC current gain
VCE = 1 V;
IC= 0.1mA
IC = 1mA
IC = 10mA
IC = 50mA
IC = 100mA
60
80
100
60
30
300
-
VCEsat
collector-emitter saturation
voltage
IC = 10mA; IB = 1mA
-
200
mV
IC = 50mA; IB = 5mA
-
300
mV
IC = 10mA; IB = 1mA
650
850
mV
IC = 50mA; IB = 5mA
-
950
mV
VBEsat
base-emitter saturation voltage
B
B
B
B
UNIT
Cc
collector capacitance
IE = Ie= 0; VCB= 5V;
f = 1MHz
-
4
pF
Ce
emitter capacitance
IC = Ic = 0; VBE=500mV;
f =1MHz
-
8
pF
fT
transition frequency
IC =10mA; VCE =20V;
f =100MHz
300
-
MHz
F
noise figure
IC=100mA; VCE =5V;
RS =1kΩ;f =10Hz to15.7kHz
-
5
dB
-
35
ns
-
35
ns
-
200
ns
-
50
ns
Switching times (between 10% and 90% levels);
td
delay time
tr
rise time
ts
storage time
tf
fall time
Note
ICon=10mA; IBon =1mA;
IBoff = -1mA
Pulse test: tp≤300 ms; d≤0.02.
Document number: BL/SSSTC061
Rev.A
www.galaxycn.com
2
BL Galaxy Electrical
NPN SWITCHING TRANSISTOR
Production specification
MMBT3904
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Document number: BL/SSSTC061
Rev.A
www.galaxycn.com
3
BL Galaxy Electrical
Production specification
NPN SWITCHING TRANSISTOR
MMBT3904
PACKAGE OUTLINE
Plastic surface mounted package
SOT-23
SOT-23
A
E
K
B
Dim
Min
Max
A
2.85
2.95
B
1.25
1.35
C
J
D
G
D
0.37
0.43
E
0.35
0.48
G
1.85
1.95
H
0.02
0.1
J
H
C
1.0Typical
K
0.1Typical
2.35
2.45
All Dimensions in mm
SOLDERING FOOTPRINT
Unit : mm
PACKAGE
INFORMATION
Device
Package
Shipping
MMBT3904
SOT-23
3000/Tape&Reel
Document number: BL/SSSTC061
Rev.A
www.galaxycn.com
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