BL Galaxy Electrical Production specification PNP Silicon Epitaxial Planar Transistor FEATURES z Power dissipation.(PC=150mW) z Epitaxial planar die construction. z Complementary to MMST3904. z Also available in lead free version. MMST3906 Pb Lead-free APPLICATIONS z General purpose application and switching application. SOT-323 ORDERING INFORMATION Type No. Marking Package Code MMST3906 K5N SOT-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -200 mA PC Collector Dissipation 150 mW Tj,Tstg Junction and Storage Temperature -55~150 ℃ ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Document number: BL/SSSTF052 Rev.A www.galaxycn.com 1 BL Galaxy Electrical Production specification PNP Silicon Epitaxial Planar Transistor MMST3906 Parameter Symbol Test conditions MIN Collector-base breakdown voltage V(BR)CBO IC=-10μA,IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -40 V Emitter-base breakdown voltage V(BR)EBO IE=-10μA,IC=0 -5 V Collector cut-off current ICBO VCB=-30V,IE=0 -0.05 μA Emitter cut-off current IEBO VEB=-5V,IC=0 -0.05 μA DC current gain hFE VCE=-1V,IC=-0.1mA VCE=-1V,IC=-1mA VCE=-1V,IC=-10mA VCE=-1V,IC=-50mA VCE=-1V,IC=-100mA Collector-emitter saturation voltage VCE(sat) IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA Base-emitter saturation voltage VBE(sat) IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA Transition frequency fT VCE=-20V,IC= -10mA, f=100MHz Collector output capacitance Cobo VCB=-5V,IE=0,f=1MHz 4.5 pF Collector input capacitance Ciob VCB=-5V,IE=0,f=1MHz 10 pF Noise figure NF VCE=-5V,IC=-0.1mA, f=1KHz,Rs=1KΩ 4 dB Delay time td 35 nS Rise time tr 35 nS Storage time ts 225 nS Fall time tf 75 nS 60 80 100 60 30 -0.65 TYP MAX 300 -0.25 -0.4 V -0.85 -0.95 V 250 VCC=-3V,VBE=-0.5V, IC=-10mA,IB1=-1mA VCC=-3V,IC=-10mA, IB1=IB2=-1mA MHz TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Document number: BL/SSSTF052 Rev.A UNIT www.galaxycn.com 2 BL Galaxy Electrical PNP Silicon Epitaxial Planar Transistor Document number: BL/SSSTF052 Rev.A Production specification MMST3906 www.galaxycn.com 3 BL Galaxy Electrical Production specification PNP Silicon Epitaxial Planar Transistor MMST3906 PACKAGE OUTLINE Plastic surface mounted package SOT-323 SOT-323 Dim Min Max A 1.8 2.2 B 1.15 1.35 C 1.0Typical D 0.15 0.35 E 0.25 0.40 G 1.2 1.4 H 0.02 0.1 J K 0.1Typical 2.1 2.3 All Dimensions in mm PACKAGE INFORMATION Device Package Shipping MMST3906 SOT-323 3000/Tape&Reel Document number: BL/SSSTF052 Rev.A www.galaxycn.com 4