BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z High current gain bandwidth product. z power dissipation.(PC=200mW) S9018 Pb Lead-free APPLICATIONS z NPN epitaxial silicon transistor. ORDERING INFORMATION SOT-23 Type No. Marking S9018 Package Code J8 SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value Units VCBO Collector-Base Voltage 25 V VCEO Collector-Emitter Voltage 18 V VEBO Emitter-Base Voltage 4 V IC Collector Current -Continuous 50 mA PC Collector Dissipation 200 mW Tj,Tstg Junction and Storage Temperature -55~150 ℃ ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0 25 V Collector-emitter breakdown voltage V(BR)CEO IC=0.1mA,IB=0 18 V Emitter-base breakdown voltage V(BR)EBO IE=-100μA,IC=0 4 V Collector cut-off current ICBO VCB=20V,IE=0 0.1 μA Collector cut-off current ICEO VCE=15V,IB=0 0.1 μA Emitter cut-off current IEBO VEB=3V,IC=0 0.1 μA DC current gain hFE VCE=5V,IC=1mA Collector-emitter saturation voltage VCE(sat) IC=10 mA, IB= 1mA 0.5 V Base-emitter saturation voltage VBE(sat) IC=10 mA, IB= 1mA 1.4 V Transition frequency fT VCE=5V, IC= 5mA f=400MHz Document number: BL/SSSTC085 Rev.A 70 600 TYP MAX UNIT 190 MHz www.galaxycn.com 1 BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor S9018 TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Document number: BL/SSSTC085 Rev.A www.galaxycn.com 2 BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor S9018 PACKAGE OUTLINE Plastic surface mounted package SOT-23 SOT-23 A E K B Dim Min Max A 2.85 2.95 B 1.25 1.35 C J D G H C 1.0Typical D 0.37 0.43 E 0.35 0.48 G 1.85 1.95 H 0.02 0.1 J K 0.1Typical 2.35 2.45 All Dimensions in mm SOLDERING FOOTPRINT PACKAGE Unit : mm INFORMATION Device Package Shipping S9018 SOT-23 3000/Tape&Reel Document number: BL/SSSTC085 Rev.A www.galaxycn.com 3