BILIN S9018

BL Galaxy Electrical
Production specification
Silicon Epitaxial Planar Transistor
FEATURES
z
High current gain bandwidth product.
z
power dissipation.(PC=200mW)
S9018
Pb
Lead-free
APPLICATIONS
z
NPN epitaxial silicon transistor.
ORDERING INFORMATION
SOT-23
Type No.
Marking
S9018
Package Code
J8
SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
25
V
VCEO
Collector-Emitter Voltage
18
V
VEBO
Emitter-Base Voltage
4
V
IC
Collector Current -Continuous
50
mA
PC
Collector Dissipation
200
mW
Tj,Tstg
Junction and Storage Temperature
-55~150
℃
ELECTRICAL CHARACTERISTICS @ Ta=25℃
unless otherwise specified
Parameter
Symbol
Test conditions
MIN
Collector-base breakdown voltage
V(BR)CBO
IC=100μA,IE=0
25
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=0.1mA,IB=0
18
V
Emitter-base breakdown voltage
V(BR)EBO
IE=-100μA,IC=0
4
V
Collector cut-off current
ICBO
VCB=20V,IE=0
0.1
μA
Collector cut-off current
ICEO
VCE=15V,IB=0
0.1
μA
Emitter cut-off current
IEBO
VEB=3V,IC=0
0.1
μA
DC current gain
hFE
VCE=5V,IC=1mA
Collector-emitter saturation voltage
VCE(sat)
IC=10 mA, IB= 1mA
0.5
V
Base-emitter saturation voltage
VBE(sat)
IC=10 mA, IB= 1mA
1.4
V
Transition frequency
fT
VCE=5V, IC= 5mA
f=400MHz
Document number: BL/SSSTC085
Rev.A
70
600
TYP
MAX
UNIT
190
MHz
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1
BL Galaxy Electrical
Production specification
Silicon Epitaxial Planar Transistor
S9018
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Document number: BL/SSSTC085
Rev.A
www.galaxycn.com
2
BL Galaxy Electrical
Production specification
Silicon Epitaxial Planar Transistor
S9018
PACKAGE OUTLINE
Plastic surface mounted package
SOT-23
SOT-23
A
E
K
B
Dim
Min
Max
A
2.85
2.95
B
1.25
1.35
C
J
D
G
H
C
1.0Typical
D
0.37
0.43
E
0.35
0.48
G
1.85
1.95
H
0.02
0.1
J
K
0.1Typical
2.35
2.45
All Dimensions in mm
SOLDERING FOOTPRINT
PACKAGE
Unit : mm
INFORMATION
Device
Package
Shipping
S9018
SOT-23
3000/Tape&Reel
Document number: BL/SSSTC085
Rev.A
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