BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z High transition frequency. z Power dissipation.(PC=350mW) MMBTH10 Pb Lead-free APPLICATIONS z VHF/UHF Transistor. SOT-23 ORDERING INFORMATION Type No. Marking Package Code MMBTH10 3EM SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value Units VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 3 V IC Collector Current -Continuous 50 mA PC Collector Dissipation 350 mW Tj,Tstg Junction and Storage Temperature -55~150 ℃ ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0 30 V Collector-emitter breakdown voltage V(BR)CEO IC=0.1mA,IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE=10μA,IC=0 3 V Collector cut-off current ICBO VCB=25V,IE=0 0.1 μA Emitter cut-off current IEBO VEB=2V,IC=0 0.1 μA DC current gain hFE VCE=10V,IC=4.0mA Collector-emitter saturation voltage VCE(sat) IC=4.0mA, IB= 0.4mA 0.5 V Base-emitter on voltage VBE(on) IC=4.0mA, VCE=10V 0.95 V Transition frequency fT VCE=10V, IC= 4.0mA f=100MHz Document number: BL/SSSTC125 Rev.A B MAX UNIT 60 B 650 MHz www.galaxycn.com 1 BL Galaxy Electrical Silicon Epitaxial Planar Transistor Production specification MMBTH10 TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Document number: BL/SSSTC125 Rev.A www.galaxycn.com 2 BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor MMBTH10 PACKAGE OUTLINE Plastic surface mounted package SOT-23 SOT-23 A E K B Dim Min Max A 2.85 2.95 B 1.25 1.35 C J D G H C 1.0Typical D 0.37 0.43 E 0.35 0.48 G 1.85 1.95 H 0.02 0.1 J K 0.1Typical 2.35 2.45 All Dimensions in mm SOLDERING FOOTPRINT Unit : mm PACKAGE INFORMATION Device Package Shipping MMBTH10 SOT-23 3000/Tape&Reel Document number: BL/SSSTC125 Rev.A www.galaxycn.com 3