BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z High current gain bandwidth product. z power dissipation.(PC=200mW) S9018W Pb Lead-free APPLICATIONS z NPN epitaxial silicon transistor. ORDERING INFORMATION SOT-323 Type No. Marking S9018 Package Code J8 SOT-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value Units VCBO Collector-Base Voltage 25 V VCEO Collector-Emitter Voltage 18 V VEBO Emitter-Base Voltage 4 V IC Collector Current -Continuous 50 mA PC Collector Dissipation 200 mW Tj,Tstg Junction and Storage Temperature -55~150 ℃ ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0 25 V Collector-emitter breakdown voltage V(BR)CEO IC=0.1mA,IB=0 18 V Emitter-base breakdown voltage V(BR)EBO IE=-100μA,IC=0 4 V Collector cut-off current ICBO VCB=20V,IE=0 0.1 μA Collector cut-off current ICEO VCE=15V,IB=0 0.1 μA Emitter cut-off current IEBO VEB=3V,IC=0 0.1 μA DC current gain hFE VCE=5V,IC=1mA Collector-emitter saturation voltage VCE(sat) IC=10 mA, IB= 1mA 0.5 V Base-emitter saturation voltage VBE(sat) IC=10 mA, IB= 1mA 1.4 V Transition frequency fT VCE=5V, IC= 5mA f=400MHz Document number: BL/SSSTF060 Rev.A 70 600 TYP MAX UNIT 190 MHz www.galaxycn.com 1 BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor S9018W TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Document number: BL/SSSTF060 Rev.A www.galaxycn.com 2 BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor S9018W PACKAGE OUTLINE Plastic surface mounted package SOT-323 SOT-323 Dim Min Max A 1.8 2.2 B 1.15 1.35 C 1.0Typical D 0.15 0.35 E 0.25 0.40 G 1.2 1.4 H 0.02 0.1 J K 0.1Typical 2.1 2.3 All Dimensions in mm PACKAGE INFORMATION Device Package Shipping S9018W SOT-323 3000/Tape&Reel Document number: BL/SSSTF060 Rev.A www.galaxycn.com 3