CEL NESG3032M14

NPN SILICON GERMANIUM RF TRANSISTOR
NESG3032M14
NPN SiGe RF TRANSISTOR FOR
LOW NOISE, HIGH-GAIN AMPLIFICATION
4-PIN LEAD-LESS MINIMOLD (M14, 1208 PACKAGE)
FEATURES
• The device is an ideal choice for low noise, high-gain amplification
NF = 0.6 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.0 GHz
• Maximum stable power gain: MSG = 20.5 dB TYP. @ VCE = 2 V, IC = 15 mA, f = 2.0 GHz
• SiGe HBT technology (UHS3) adopted: fmax = 110 GHz
• 4-pin lead-less minimold (M14, 1208 package)
ORDERING INFORMATION
Part Number
Order Number
NESG3032M14
NESG3032M14-A
Package
Quantity
4-pin lead-less minimold
50 pcs
• 8 mm wide embossed taping
(M14, 1208 package)
(Non reel)
• Pin 1 (Collector), Pin 4 (Emitter) face the
(Pb-Free)
NESG3032M14-T3 NESG3032M14-T3-A
Supplying Form
perforation side of the tape
10 kpcs/reel
Remark To order evaluation samples, contact your nearby sales office.
Unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
VCBO
12.0
V
Collector to Emitter Voltage
VCEO
4.3
V
Emitter to Base Voltage
VEBO
1.5
V
IC
35
mA
150
mW
Collector Current
Total Power Dissipation
Ptot
Note
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
−65 to +150
°C
Note Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy PWB
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
Document No. PU10575EJ01V0DS (1st edition)
Date Published July 2005 CP(K)
© NEC Compound Semiconductor Devices, Ltd. 2005
NESG3032M14
ELECTRICAL CHARACTERISTICS (TA = +25°C)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
DC Characteristics
Collector Cut-off Current
ICBO
VCB = 5 V, IE = 0 mA
−
−
100
nA
Emitter Cut-off Current
IEBO
VEB = 1 V, IC = 0 mA
−
−
100
nA
VCE = 2 V, IC = 6 mA
220
300
380
−
⏐S21e⏐
VCE = 2 V, IC = 15 mA, f = 2.0 GHz
15.0
17.5
−
dB
Noise Figure
NF
VCE = 2 V, IC = 6 mA, f = 2.0 GHz,
ZS = ZSopt, ZL = ZLopt
−
0.60
0.85
dB
Associated Gain
Ga
VCE = 2 V, IC = 6 mA, f = 2.0 GHz,
ZS = ZSopt, ZL = ZLopt
−
17.5
−
dB
VCB = 2 V, IE = 0 mA, f = 1 MHz
−
0.15
0.25
pF
17.5
20.5
−
dB
DC Current Gain
hFE
Note 1
RF Characteristics
2
Insertion Power Gain
Reverse Transfer Capacitance
Maximum Stable Power Gain
Cre
Note 2
Note
MSG
VCE = 2 V, IC = 15 mA, f = 2.0 GHz
3
Gain 1 dB Compression Output Power
PO (1 dB)
VCE = 3 V, IC (set) = 20 mA,
f = 2.0 GHz, ZS = ZSopt, ZL = ZLopt
−
12.5
−
dBm
3rd Order Intermodulation Distortion
Output Intercept Point
OIP3
VCE = 3 V, IC (set) = 20 mA,
f = 2.0 GHz, ZS = ZSopt, ZL = ZLopt
−
24.0
−
dBm
Notes 1. Pulse measurement: PW ≤ 350 µs, Duty Cycle ≤ 2%
2. Collector to base capacitance when the emitter grounded
3. MSG =
S21
S12
hFE CLASSIFICATION
Rank
FB
Marking
zN
hFE Value
220 to 380
S-PARAMETERS
S-parameters/Noise parameters are provided on the NEC Compound Semiconductor Devices Web site in a form
(S2P) that enables direct import to a microwave circuit simulator without keyboard input.
Click here to download S-parameters.
[RF and Microwave] → [Device Parameters]
URL http://www.ncsd.necel.com/
2
Data Sheet PU10575EJ01V0DS
NESG3032M14
PACKAGE DIMENSIONS
4-PIN LEAD-LESS MINIMOLD (M14, 1208 PACKAGE) (UNIT: mm)
1.0±0.05
0.15±0.05
2
0.11+0.1
–0.05
1
zN
4
0.8
0.5±0.05
1.2+0.07
–0.05
3
0.8+0.07
–0.05
PIN CONNECTIONS
1.
2.
3.
4.
Collector
Emitter
Base
NC (Connected with Pin 2)
Data Sheet PU10575EJ01V0DS
3
NESG3032M14
When the product(s) listed in this document is subject to any applicable import or export control laws and regulation of the authority
having competent jurisdiction, such product(s) shall not be imported or exported without obtaining the import or export license.
• The information in this document is current as of July, 2005. The information is subject to change
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M8E 00. 4 - 0110
4
Data Sheet PU10575EJ01V0DS
NESG3032M14
For further information, please contact
NEC Compound Semiconductor Devices, Ltd.
http://www.ncsd.necel.com/
E-mail: [email protected] (sales and general)
[email protected] (technical)
Sales Division TEL: +81-44-435-1573 FAX: +81-44-435-1579
NEC Compound Semiconductor Devices Hong Kong Limited
E-mail: [email protected] (sales, technical and general)
FAX: +852-3107-7309
TEL: +852-3107-7303
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http://www.cel.com/
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0504
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Santa Clara, CA 95054-1817
Telephone: (408) 919-2500
Facsimile: (408) 988-0279
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CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant
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2003/11/EC Restriction on Penta and Octa BDE.
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go into its products as of the date of disclosure of this information.
Restricted Substance
per RoHS
Concentration Limit per RoHS
(values are not yet fixed)
Concentration contained
in CEL devices
-A
Not Detected
Lead (Pb)
< 1000 PPM
Mercury
< 1000 PPM
Not Detected
Cadmium
< 100 PPM
Not Detected
Hexavalent Chromium
< 1000 PPM
Not Detected
PBB
< 1000 PPM
Not Detected
PBDE
< 1000 PPM
Not Detected
-AZ
(*)
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