COMCHIP CDBAF5818-G

SMD Schottky Barrier Rectifiers
SMD Diodes Specialist
CDBAF5817-G Thru CDBAF5819-G
Reverse Voltage: 20 - 40 Volts
Forward Current: 1A or 3A
RoHS Device
Features
For surface mounted applications.
2010
Metal to silicon rectifier,majority carrier
conduction.
Plastic package has Underwriters Lab,
flamability classification94V-0.
0.181(4.60)
0.173(4.40)
0.002(0.05)
High surge capacity.
0.091(2.30)
0.083(2.10)
0.020(R0.50)
High current capability, low forward voltage.
Mechanical data
0.045(1.15)
0.029(0.75)
Case: Packed with FRP substrate and
epoxy underfilled.
0.045(1.15)
0.029(0.75)
0.046(1.16)
0.034(0.86)
Terminals: Solderable per MIL-STD-750,
method 2026.
Polarity: Indicated by cathode band .
Dimensions in inches and (millimeter)
Weight: 0.02 gram(approx.).
Maximum Ratings (at T A =25 C unless otherwise noted)
O
Symbol CDBAF5817-G CDBAF5818-G CDBAF5819-G Unit
Parameter
Max. Repetitive Peak Reverse Voltage
V RRM
20
30
40
V
V DC
20
30
40
V
Max. RMS Voltage
V RMS
14
21
28
V
Peak Surge Forward Current
8.3ms single half sine-wave
suprimposed on rate load
(JEDEC method)
I FSM
30
A
IO
1
A
Max. DC Bolcking Voltage
Max. Average Forward Current
Typ ica l The rmal Res ist an ce (Not e 3)
R
St or ag e Temper at ur e
T STG
-50 to +1 25
Tj
+1 25
Max. Oper at ing Ju nc tion Temper at ur e
O
80
JA
C/ W
O
C
O
C
Electrical Characteristics (at T A =25 C unless otherwise noted)
O
Symbol CDBAF5817-G CDBAF5818-G CDBAF5819-G Unit
Parameter
Max. Forward Voltage at 1.0 A (Note 1)
at 3.0 A (Note 1)
VF
Max. DC Reverse Current at Rated DC
Blocking Voltage
Tj = 25 C
Tj = 100 C
IR
0.5
10
mA
Typical Junction Capacitance (Note 2)
Cj
110
pF
O
0.45
0.75
O
0.550
0.875
0.60
0.90
V
Notes: (1) Pulse test width PW = 300usec, 1% duty cycle.
(2) Measured at 1.0 Mhz and applied reverse voltage of 4.0 Volts.
(3) Thermal Resistance Junction to Ambient.
REV:A
QW-BB014
Page 1
SMD Schottky Barrier Rectifiers
SMD Diodes Specialist
RATING AND CHARACTERISTIC CURVES (CDBAF5817-G Thru CDBAF5819-G)
Fig. 2 - Reverse characteristics
Fig. 1 - Forward characteristics
100
10
Reverse current (mA)
Forward current (A)
CDBAF5817-G
CDBAF5818-G
CDBAF5819-G
1.0
O
Tj =25 C
0.1
0.01
10
O
Tj=125 C
1
0.1
O
0.01
Tj =25 C
0.001
0
0.2
0.4
0.6
0.8
1.0
1.2
0
20
60
40
80
100
Forward voltage (V)
Percent of rated peak reverse voltage (%)
Fig.3 - Capacitance between
terminals characteristics
Fig.4 - Current derating curve
400
F=1MHz
Tj=25 C
100
Average forward current(A)
Junction capacitance( P F)
O
single phase half wave 60Hz
resistive or inductive
1.2
1.0
0.8
0.6
0.4
0.2
0
10
0.1
1
4
10
100
0
25
50
75
100
125
150
O
Reverse voltage (V)
Lead temperature ( C)
Fig.5 - Max. Non repetitive peak
forward surge current
Peak surge forward current(A)
30
8.3 ms single half sine
wave JEDEC mehode
25
20
15
10
5
0
1
10
100
Number of cycles at 60 Hz
REV:A
QW-BB014
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