Low VF SMD Schottky Barrier Rectifiers CDBA120L-G Thru. CDBA140SL-G Reverse Voltage: 20 to 40 Volts Forward Current: 1.0 Amp RoHS Device Features DO-214AC (SMA) -Ideal for surface mount applications. -Easy pick and place. 0.180(4.57) 0.160(4.06) -Plastic package has Underwriters Lab. flammability classification 94V-0. 0.110(2.79) 0.086(2.18) 0.067(1.70) 0.051(1.29) -Built in strain relief. -Super low forward voltage drop. Mechanical data 0.209(5.31) 0.185(4.70) -Case: JEDEC DO-214AC, molded plastic. 0.012(0.31) 0.006(0.15) 0.091(2.31) 0.067(1.70) -Terminals: solderable per MIL-STD-750, method 2026. 0.059(1.50) 0.035(0.89) 0.008(0.20) 0.004(0.10) -Polarity: Color band denotes cathode end. -Approx. weight: 0.063 grams Dimensions in inches and (millimeter) Maximum Ratings and Electrical Characteristics Single phase half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Symbol CDBA 120L-G CDBA 120LL-G CDBA 140L-G Max. repetitive peak reverse voltage VRRM 20 20 40 Max. DC blocking voltage VDC 20 20 Max. RMS voltage VRMS 14 14 Peak surge forward current, 8.3ms single half sine-wave superimposed on rate load (JEDEC method) IFSM 35 A IO 1.0 A Parameter Max. average forward current Max. instantaneous forward 1.0A Max. DC reverse current at rated DC blocking voltage voltage at TA=25 TA=80 Max. thermal resistance (Note 1) Max. operating junction temperature Storage temperature O C C O VF 0.38 0.31 CDBA 140SL-G Units 40 40 V 40 40 40 V 28 28 28 V 0.40 CDBA 140LL-G 0.34 0.31 V IR 1.0 40 RθJA RθJL 88 20 TJ 125 O C TSTG -55 to +125 O C mA O C/W 2 Notes: 1. Thermal resistance from junction to ambient and junction to lead, P.C.B. mounted on 0.2×0.2 inch copper pad area. REV:A Page 1 QW-BL003 Comchip Technology CO., LTD. Low VF SMD Schottky Barrier Rectifiers RATING AND CHARACTERISTIC CURVES (CDBA120L-G thru CDBA140SL-G) Fig.1 Reverse Characteristics Fig.2 Forward Characteristics 100 10 10 1 F o r w a rd C u rren t(A) R e v e r s e C u r rent(m A) TJ=25 OC Pulse width 300μS 4% duty cycle 1 O TJ=75 C CDBA120LL-G CDBA120L-G 0.1 0.01 0.1 O TJ=25 C 0.01 0.001 0 40 80 120 160 0 200 200 400 300 Percent of Rated Peak Reverse Voltage (%) Forward Voltage (mV) Fig.3 Junction Capacitance Fig.4 Forward Characteristics 700 500 10 TJ=25 OC f=1MHz and applied 4VDC reverse voltage 600 C D CDBA140LL-G BA 14 500 CD 400 BA 12 0L 0S L- L- CDB 200 G G/ 14 300 A120 L Forward C urren t ( A ) J u n c ti o n C apacian t ce(p F ) 100 0L L- G -G /1 40 L-G 1 CDBA140SL-G CDBA140L-G 0.1 0.01 100 O TJ=25 C Pulse width 300μS 4% duty cycle 0 0.01 0.001 0.1 1 10 0 100 100 Reverse Voltage (V) 200 400 300 500 Forward Voltage (mV) Fig.5 Non-repetitive Forward Surge Current Fig.6 Current Derating Curve 60 1.4 50 A v e r a g e F o r w a r d C u r re nt ( A ) P e a k F o r w a r d S u r g e Cur r e n t (A ) O TJ=25 C 8.3ms single half sine wave, JEDEC method 40 30 20 10 1.2 1.0 0.8 0.6 0.4 0.2 0 0 1 10 100 0 25 50 75 100 125 Ambient Temperature ( Number of Cycles at 60Hz O 150 175 C) REV:A Page 2 QW-BL003 Comchip Technology CO., LTD.