COMCHIP Low VF Schottky Bridge Rectifiers SMD DIODE SPECIALIST Reverse Voltage: 20 - 100 Volts Forward Current: 1.0 Amp ~ + CDBHD120L-G Thru 1100L-G ~ – Features Mini-DIP • Low Vf Schottky barrier chips in bridge • Metal-Semiconductor junction with guard ring • High surge current capability • Silicon epitaxial planar chips • For use in low voltage, high efficiency inverters, free wheeling, and polarity protection applications • Lead-free part, meet RoHS requirements .106(2.7) .090(2.3) + – Mechanical Data .031(0.8) .019(0.5) • Case: Mini-Dip bridge (TO-269AA) plastic molded case • Epoxy: UL94-V0 rated flame retardant • Terminals: Solderable per MIL-STD-750 Method 2026 • Polarity: As marked on body • Mounting Position: Any • Weight: 0.0078 ounces, 0.22 grams .043(1.1) .027(0.7) .275(7.0) Max. ~ .165(4.2) .150(3.8) ~ C .02(0.5) .016(0.41) .006(0.15) .067(1.7) .057(1.3) .193(4.90) .177(4.50) .051(1.3) .035(0.9) .106(2.7) .090(2.3) .114(2.90) .094(2.40) .008(0.2) Max. Unit :inch(mm) MAXIMUM RATING AND ELECTRICAL CHARACTERISTICS Ratings at 25°C ambient temperature unless otherwise specified CDBHD - Symbols 120L 140L 160L 180L 1100L Units Maximum Recurrent Peak Reverse Voltage V RRM 20 40 60 80 100 Volts Maximum RMS Voltage V RMS 14 28 42 56 70 Volts Maximum DC Blocking Voltage V DC 20 40 60 80 100 Volts Maximum Average Forward Rectified Current 0.2x0.2” (5.0x5.0mm) copper pad area, see Figure 1 I AV 1.0 Amps I FSM 30.0 Amps Peak Forward Surge Current 8.3mS single half sine-wave superimp osed on rated load (JEDEC Me thod) Maximum Forward Voltage at 1.0A (Note 1) Maximum DC Reverse Current at Rated DC Blocking Voltage VF T A = 25°C T A = 100 °C 0.44 0.625 0.75 Volts 0.5 IR mA 20.0 Typical Junction Capacitance (Note 2) CJ Typical Thermal Resistance (Note 3) R θJA R θJL 85.0 20.0 °C/W TJ -55 ~ +125 °C T STG -55 ~ +150 °C Operating Junction Temperature Range Storage Temperature Range 250 125 pF : Note 1. Pulse test: 300µS pu lse wi dth, 1% du ty cy cle 2. Me asured at 1.0MH z an d ap plied reverse vo ltage of 4.0 Volts 3. Therma l resistance from junction to am bient and from junction to lead P.C.B. mo unted on 0. 2x0.2”(5.0x5.0mm ) co pper pa d ar eas. MDS0702004A Page 1 COMCHIP Low VF Schottky Bridge Rectifiers Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Peak Forward Surge Current (A) Average Forward Current (A) Fig.1 - Forward Current Derating Curve 1.2 1.0 0.8 0.6 CDBHD120L-G - 160L-G 0.4 CDBHD180L-G - 1100L-G 0.2 single phase half wave 60Hz resistive or inductive load 3.75”(9.5mm) lead length 0 25 50 75 100 125 150 175 100 10 T L =110°C 8.3mS single half sine-wave (JEDEC Method) 1 1 10 Lead Temperature ( °C) CDBHD120L-G - 140L-G CDBHD160L-G CDBHD180L-G - 1100L-G 0.01 0 0.2 0.4 0.6 0.8 1.0 CDBHD120L-G - 160L-G 10 T J =125°C 1.0 T J =75°C 0.1 0.01 T J =25°C 20 40 60 80 100 120 140 Instantaneous Forward Voltage (Volts) Percent of Rated Peak Reverse Voltage ( %) Fig. 5 - Typical Junction Capacitance Fig. 4B - Typeical Reverse Characteristic 1000 T J =25°C f=1.0MHz Junction Capacitance (pF) 100 0.001 0 CDBHD120L-G - 140L-G 100 CDBHD160L-G CDBHD180L-G - 1100L-G 10 0.1 1.0 10 Reverse Voltage (Volts) MDS0702004A 100 1000 Instantaneous Reverse Current (µA) Instantaneous Forward Current (A) pulse width =300µS 1% duty cycle, T j =25°C Instantaneous Reverse Current (mA) Fig. 4A - Typical Reverse Characteristics 10 0.1 100 Number of Cycles at 60 Hz Fig. 3 - Typical Instantaneour Forward Characteristics 1.0 SMD DIODE SPECIALIST CDBHD180L-G - 1100L-G 100 T J =150°C T J =125°C 10 1.0 T J =100°C 0.1 T J =25°C 0.01 0 20 40 60 80 100 Percent of Rated Peak Reverse Voltage ( %) Page 2