DAESAN SBR750

CURRENT 7.5Amperes
VOLTAGE 35 to 60 Volts
SBR735 THRU SBR760
Features
· Plastic Package has Underwriters Laboratory
Flammability Classification 94V-0
· Metal silicon junction, majority carrier conduction
· Guard ring for overvoltage protection
· Low power loss, high efficiency
· High current capability, Low forward voltage drop
· Single rectifier construction
· High surge capability
· For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
· High temperature soldering guaranteed :
250℃/10 seconds, 0.25"(6.35mm) from case
TO-220A
.108
(2.75)
.550
.158 (14.0)
(4.0) MIN.
MAX.
.051 MAX.
(1.3)
.040 MAX.
(1.0)
PIN 1
· Case : JEDEC TO-220A molded plastic body
· Terminals : Lead solderable per
MIL-STD -750, Method 2026
· Polarity : As marked
· Mounting Position : Any
· Weight : 0.08 ounce, 2.24 gram
.050
(1.27)
.248
(6.3) .595
(15.1)
MAX.
.040
(1.0)
MAX.
Mechanical Data
.180
3.8 f +.2
HOLE THRU (4.6)
.412
(10.5)
MAX.
+
.200
(5.08)
PIN 1
+
.120
(3.05)
+
CASE
PIN 2
Case Negative
Suffix "R"
CASE
PIN 2
Case Positive
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
(Ratings at 25℃ ambient temperature unless otherwise specified, single phase, half wave, resistive or inductive
load. For capacitive load, derate by 20%)
Symbols
SBR735
SBR745
SBR750
SBR760
Units
Maximum repetitive peak reverse voltage
VRRM
35
45
50
60
Volts
Maximum RMS voltage
VRMS
25
32
35
42
Volts
Maximum DC blocking voltage
VDC
35
45
50
60
Volts
Maximum average forward rectified current
(see Fig. 1)
I(AV)
7.5
Amps
Repetitive peak forward current(square wavr,
20KHZ) at TC=105℃
IFRM
15.0
Amps
Peak forward surge current 8.3ms single half
sine-wave superimposed on rated load
(JEDEC method)
IFSM
150.0
Amps
Maximum instantaneous forward voltage
at 7.5A (Note 1)
VF
Maximum instantaneous reverse
current at rated DC blocking
voltage (Note1)
IR
0.65
TA=25℃
TA=125℃
Typical thermal resistance (Note 2)
Operating junction temperature range
Storage temperature range
Notes:
(1) Pulse test: 300μS pulse width, 1% duty cycle
(2) Thermal resistance from junction to case
0.75
Volts
1.0
RθJC
15
50
2.5
mA
℃/W
TJ
-65 to +125
℃
TSTG
-65 to +150
℃
RATINGS AND CHARACTERISTIC CURVES SBR735 THRU SBR760
FIG.2-MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
175
10
RESISTIVE OR INDUCTIVE LOAD
8.0
6.0
4.0
── SBR735--SBR745
- - - SBR750&SBR760
2.0
TJ=TJMAX
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
150
PEAK FORWARD SURGE
CURRENT(AMPERES)
AVERAGE FORWARD CURRENT
AMPERES
FIG.1-FORWARD CURRENT DERATING CURVE
125
100
75
50
0
25
0
50
100
150
1
10
100
LEAD TEMPERATURE (℃)
NUMBER OF CYCLES AT 60Hz
FIG.3-TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
FIG.4-TYPICAL REVERSE CHARACTERISTICS
20
50
── SBR735--SBR745
- - - SBR750&SBR760
INSTANTANEOUS REVERSE CURRENT MILL (AMPERES)
INSTANTANEOUS FORWARD CURRENT (AMPERES)
10
10
TJ=125℃
㎲
PULSE WIDTH=300
1% DUTY CYCLE
TJ=25℃
1
0.1
── SBR735--SBR745
- - - SBR750&SBR760
TJ=125℃
1
0.1
TJ=75℃
0.01
0.01
TJ=25℃
0
0.1
0.2
0.3
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
0.001
INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
0
20
40
60
80
100
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FIG.6-TYPICAL TRANSIENT THERMAL IMPEDANCE
FIG.5-TYPICAL JUNCTION CAPACITANCE
TRANSIENT THERMAL IMPEDANCE,℃/ W
JUNCTION CAPACITANCE(pF)
4000
TJ=25℃
f=1.0MHz
Vsig=50mVp-p
1000
── SBR735--SBR745
- - - SBR750&SBR760
100
40
0.1
1
10
REVERSE VOLTAGE. VOLTS
100
100
10
1
0.1
0.01
0.1
1
T, PULSE DURATION, sec.
10
100