SMD Switching Diode SMD Diodes Specialist CDST19-G/20-G/21-G - High Speed RoHS Device + Features SOT-23 -Fast switching diode. -Surface mount package ideally for automatic insertion. 0.119 (3.00) 0.110 (2.80) 3 -For general purpose switching applications. 0.056 (1.40) 0.047 (1.20) -High conductance. 1 Mechanical data 2 0.083 (2.10) 0.006 (0.15) 0.002 (0.05) 0.066 (1.70) Case: SOT-23 0.103 (2.60) 0.086 (2.20) 0.044 (1.10) 0.035 (0.90) Terminals: Solder plated, solderable per MILSTD-750, Method 2026. 0.006 (0.15) max 0.020 (0.50) 0.013 (0.35) Weight: 0.008 gram. Marking: CDST19-G JP CDST20-G JR CDST21-G JS 0.007 (0.20) min Dimensions in inches and (millimeters) Maximum Rating (at T A =25 C unless otherwise noted) O Symbol CDST19-G CDST20-G CDST21-G Unit Non-Repetitive peak reverse voltage V RM 100 150 200 V DC blocking voltage VR 100 150 200 V Average rectified output current IO 200 Power dissipation PD 250 Parameter Thermal resistance-Junction to ambient air Junction temperature Storage temperature range mA mW O R θJA 500 TJ 150 O T STG -65 ~ +150 O C/W C C Electrical Characteristics (at T A =25 C unless otherwise noted) O Symbol Parameter Test Conditions Min Max 100 150 200 Unit Reverse breakdown voltage CDST19-G CDST20-G CDST21-G V BR I R =100uA Reverse leakage current CDST19-G CDST20-G CDST21-G IR V R =100V V R =150V V R =200V 0.1 UA Forward voltage VF I F =100mA I F =200mA 1 1.25 V Junction capacitance CJ V R =0V, f=1MH Z 5 pF Reverse recovery time t rr I F =I R =30mA, Irr=0.1 X I R 50 nS V REV:A QW-B0021 Page 1 SMD Switching Diode SMD Diodes Specialist Characteristic Curves (CDST19-G/20-G/21-G) Fig. 1 - Forward Characteristics Fig. 2 - Leakage Current vs Junction Temperature 1000 100 T J =25 C I R , Leakage Current (uA) I F , Forward Current (mA) O 100 10 1 0.1 0.01 0 1 V F , Forward Voltage (V) 2 10 1 0.1 0.01 0 100 200 T J , Junction Temperature ( OC) REV:A QW-B0021 Page 2