COMCHIP CDSH3-21-G_12

SMD Switching Diodes
CDSH3-21-G
Voltage: 200 Volts
Current: 200 mA
RoHS Device
SOT-523
Features
-Fast switching speed.
0.067(1.70)
0.059(1.50)
-For general purpose switching applications.
3
-High conductance.
0.033(0.85)
0.030(0.75)
Mechanical data
1
-Case: SOT-523, molded plastic.
2
0.008(0.20)
0.004(0.10)
0.043(1.10)
0.035(0.90)
-Terminals: Solder plated, solderable per MIL-STD202E, method 208C.
0.069(1.75)
0.057(1.45)
0.031(0.80)
0.024(0.60)
-Weight: 0.002 grams approx.
Circuit Diagram
0.004(0.10)max.
0.012(0.30)
0.006(0.15)
3
1
0.004(0.10)min.
2
Dimensions in inches and (millimeter)
CDSH3-21-G
Marking: T3
Maximum Ratings (at TA=25°C unless otherwise noted)
Symbol
Parameter
Peak repetitive peak reverse voltage
VRRM
Working peak reverse voltage
VRWM
Value
Unit
200
V
DC blocking voltage
VR
Forward continuous current
IFM
400
mA
Averaged rectified output current
IO
200
mA
IFSM
2.5
0.5
A
PD
150
Non-repetitive Peak forward surge current
@TP=1.0μS
@TP=1.0S
Power dissipation
Thermal resistance, junction to ambient air
Operating junction temperature
Storage temperature range
mW
O
RθJA
833
TJ
150
O
C
-65 to +150
O
C
TSTG
C/W
Electrical Ratings (at TA=25°C unless otherwise noted)
Parameter
Symbol
Conditions
Min.
Typ.
Max.
VBR
IR=100μA
VF1
IF=100mA
1
V
VF2
IF=200mA
1.25
V
Reverse current
IR
VR=200V
100
nA
Capacitance between terminals
CT
VR=0V, f=1MHz
5
pF
Reverse recovery time
Trr
IF=IR=30mA,
IRR=0.1IR, RL=100Ω
50
nS
Reverse breakdown voltage
200
Unit
V
Forward voltage
REV:A
Page 1
QW-B0039
Comchip Technology CO., LTD.
SMD Switching Diodes
Rating and Characteristic Curves (CDSH3-21-G)
Fig.1 - Forward Characteristics
Fig.2 - Reverse Characteristics
1
100
ΙR, Instantaneous Reverse Current (μA)
IF, Instantaneous Forward Current (A)
O
0.1
O
TA=150 C
TA=125 OC
O
TA=25 C
O
TA=75 C
0.01
TA=0 OC
O
TA=-40 C
0.001
0
0.2
0.4
0.6
0.8
1.0
1.2
TA=150 C
10
TA=125 OC
O
1
TA=75 C
0.1
TA=25 OC
0.01
O
TA=0 C
TA=-40 OC
0.001
0.0001
0
1.4
Fig.3 - Capacitance Between
Terminals Characteristics
100
150
200
250
Fig.4 - Power Derating Curve
3
250
f=1MHz
2.5
PD, Power Dissipation (mW)
CT, Capacitance Between Terminals (pF)
50
VR, Instantaneous Reverse Voltage (V)
VF, Instantaneous Forward Voltage (V)
2
1.5
1
0.5
0
200
150
100
50
0
0
10
20
30
40
0
VR, Reverse Voltage (V)
100
200
TA, Ambient Temperature (°C)
REV:A
Page 2
QW-B0039
Comchip Technology CO., LTD.