SMD Switching Diodes CDSH3-21-G Voltage: 200 Volts Current: 200 mA RoHS Device SOT-523 Features -Fast switching speed. 0.067(1.70) 0.059(1.50) -For general purpose switching applications. 3 -High conductance. 0.033(0.85) 0.030(0.75) Mechanical data 1 -Case: SOT-523, molded plastic. 2 0.008(0.20) 0.004(0.10) 0.043(1.10) 0.035(0.90) -Terminals: Solder plated, solderable per MIL-STD202E, method 208C. 0.069(1.75) 0.057(1.45) 0.031(0.80) 0.024(0.60) -Weight: 0.002 grams approx. Circuit Diagram 0.004(0.10)max. 0.012(0.30) 0.006(0.15) 3 1 0.004(0.10)min. 2 Dimensions in inches and (millimeter) CDSH3-21-G Marking: T3 Maximum Ratings (at TA=25°C unless otherwise noted) Symbol Parameter Peak repetitive peak reverse voltage VRRM Working peak reverse voltage VRWM Value Unit 200 V DC blocking voltage VR Forward continuous current IFM 400 mA Averaged rectified output current IO 200 mA IFSM 2.5 0.5 A PD 150 Non-repetitive Peak forward surge current @TP=1.0μS @TP=1.0S Power dissipation Thermal resistance, junction to ambient air Operating junction temperature Storage temperature range mW O RθJA 833 TJ 150 O C -65 to +150 O C TSTG C/W Electrical Ratings (at TA=25°C unless otherwise noted) Parameter Symbol Conditions Min. Typ. Max. VBR IR=100μA VF1 IF=100mA 1 V VF2 IF=200mA 1.25 V Reverse current IR VR=200V 100 nA Capacitance between terminals CT VR=0V, f=1MHz 5 pF Reverse recovery time Trr IF=IR=30mA, IRR=0.1IR, RL=100Ω 50 nS Reverse breakdown voltage 200 Unit V Forward voltage REV:A Page 1 QW-B0039 Comchip Technology CO., LTD. SMD Switching Diodes Rating and Characteristic Curves (CDSH3-21-G) Fig.1 - Forward Characteristics Fig.2 - Reverse Characteristics 1 100 ΙR, Instantaneous Reverse Current (μA) IF, Instantaneous Forward Current (A) O 0.1 O TA=150 C TA=125 OC O TA=25 C O TA=75 C 0.01 TA=0 OC O TA=-40 C 0.001 0 0.2 0.4 0.6 0.8 1.0 1.2 TA=150 C 10 TA=125 OC O 1 TA=75 C 0.1 TA=25 OC 0.01 O TA=0 C TA=-40 OC 0.001 0.0001 0 1.4 Fig.3 - Capacitance Between Terminals Characteristics 100 150 200 250 Fig.4 - Power Derating Curve 3 250 f=1MHz 2.5 PD, Power Dissipation (mW) CT, Capacitance Between Terminals (pF) 50 VR, Instantaneous Reverse Voltage (V) VF, Instantaneous Forward Voltage (V) 2 1.5 1 0.5 0 200 150 100 50 0 0 10 20 30 40 0 VR, Reverse Voltage (V) 100 200 TA, Ambient Temperature (°C) REV:A Page 2 QW-B0039 Comchip Technology CO., LTD.