MICROSEMI 1N6674R

TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
DUAL ULTRAFAST POWER RECTIFIER
Qualified per MIL-PRF-19500/617
DEVICES
LEVELS
1N6672
1N6673
1N6674
1N6672R
1N6673R
1N6674R
JAN
JANTX
JANTXV
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) (Per Diode)
Parameters / Test Conditions
Symbol
Value
Unit
VRWM
300
400
500
Vdc
IF
15
Adc
Peak Surge Forward Current
IFSM
150
A(pk)
Thermal Resistance - Junction to Case
Rθjc
2.0
°C/W
1N6672, R
1N6673, R
1N6674, R
Peak Repetitive Reverse Voltage
Average Forward Current (1)
TC = +100°C
TO-254
Note:
(1) Derate @ 150mA/°C above TC = 100°C
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
Breakdown Voltage (2)
IR = 500µAdc
1N6672, R
1N6673, R
1N6674, R
Forward Voltage (2)
IF = 10A (pk)
IF = 20A (pk)
Reverse Leakage Current (2)
VR = 240V
VR = 320V
VR = 400V
1N6672, R
1N6673, R
1N6674, R
Reverse Leakage Current (2)
VR = 240V, TC = +100°C
VR = 320V, TC = +100°C
VR = 400V, TC = +100°C
1N6672, R
1N6673, R
1N6674, R
Symbol
Min.
VBR
300
400
500
Max.
Unit
Vdc
•1
•2
•3
1N6672, 1N6673, 1N6674
VF1
VF2
1.35
1.55
Vdc
IR1
50
µAdc
•1
•2
•3
1N6672R, 1N6673R, 1N6674R
IR2
5
mAdc
Reverse Recovery Time
IF = 0.5A, IR = 1A, IRR = 0.25A
trr
35
nS
Junction Capacitance
VR = 10Vdc, f = 1.0MHz,
Vsig = 50mV (p-p) (max)
CJ
150
pF
Note:
(2) Pulse Test; 300µS, duty cycle ≤ 2%
T4-LDS-0020 Rev. 1 (072046)
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