Spec. No. : C847J3 Issued Date : 2003.03.26 Revised Date :2004.07.02 Page No. : 1/4 CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor BTD2118J3 Features • Low VCE(sat), VCE(sat)=0.35 V (typical), at IC / IB = 4A / 0.1A • Excellent current gain characteristics • Complementary to BTB1412J3 Symbol Outline BTD2118J3 TO-252 B：Base C：Collector E：Emitter B C E Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pulse) Power Dissipation(TA=25℃) Power Dissipation(TC=25℃) Junction Temperature Storage Temperature Symbol Limits Unit VCBO VCEO VEBO IC ICP Pd(TA=25℃) Pd(TC=25℃) Tj Tstg 50 20 6 5 10 1 10 150 -55~+150 V V V *1 *2 A W °C °C Note : *1. Single Pulse , Pw≦380µs,Duty≦2%. *2. When mounted on a 40*40*0.7mm ceramic board. BTD2118J3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C847J3 Issued Date : 2003.03.26 Revised Date :2004.07.02 Page No. : 2/4 Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *hFE fT Cob Min. 50 20 6 120 - Typ. 0.35 150 35 Max. 0.5 0.5 1 560 - Unit V V V µA µA V MHz pF Test Conditions IC=50µA, IE=0 IC=1mA, IB=0 IE=50µA, IC=0 VCB=40V, IE=0 VEB=5V, IC=0 IC=4A, IB=0.1A VCE=2V, IC=0.5A VCE=6V, IC=50mA, f=100MHz VCB=20V, f=1MHz *Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2% Classification Of hFE Rank Range BTD2118J3 Q 120~270 R 180~390 S 270~560 CYStek Product Specification Spec. No. : C847J3 Issued Date : 2003.03.26 Revised Date :2004.07.02 Page No. : 3/4 CYStech Electronics Corp. Characteristic Curves Saturation Voltage vs Collector Current Current Gain vs Collector Current 1000 1000 VCESAT@IC=20IB Current Gain--- HFE Saturation Voltage-(mV) HFE@VCE=2V 100 10 1 100 1 10 100 1000 10000 0.1 Collector Current---IC(mA) 1 10 100 1000 10000 Collector Current---IC(mA) Saturation Voltage vs Collector Current Saturation Voltage vs Collector Current 10000 1000 VBE(SAT)@IC=20IB Saturation Voltage-(mV) Saturation Voltage-(mV) VCE(SAT)@IB=40IB 100 10 1 1 10 100 1000 10000 1000 100 1 10 Collector Current---IC(mA) 10000 Power Derating Curve 12 Power Dissipation---PD(W) 1.2 Power Dissipation---PD(W) 1000 Collector Current---IC(mA) Power Derating Curve 1 0.8 0.6 0.4 0.2 0 10 8 6 4 2 0 0 50 100 150 Ambient Temperature---TA(℃ ) BTD2118J3 100 200 0 50 100 150 200 Case Temperature---TC(℃) CYStek Product Specification CYStech Electronics Corp. Spec. No. : C847J3 Issued Date : 2003.03.26 Revised Date :2004.07.02 Page No. : 4/4 TO-252 Dimension C A Marking: D B D2118 G F L 3 H E K 2 Style: Pin 1.Base 2.Collector 3.Emitter I 1 J 3-Lead TO-252 Plastic Surface Mount Package CYStek Package Code: J3 *: Typical Inches Min. Max. 0.0177 0.0217 0.0650 0.0768 0.0354 0.0591 0.0177 0.0236 0.2520 0.2677 0.2125 0.2283 DIM A B C D E F Millimeters Min. Max. 0.45 0.55 1.65 1.95 0.90 1.50 0.45 0.60 6.40 6.80 5.40 5.80 DIM G H I J K L Inches Min. Max. 0.0866 0.1102 *0.0906 0.0354 0.0315 0.2047 0.2165 0.0551 0.0630 Millimeters Min. Max. 2.20 2.80 *2.30 0.90 0.80 5.20 5.50 1.40 1.60 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: 42 Alloy; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTD2118J3 CYStek Product Specification