CYStech Electronics Corp. Spec. No. : C847A3 Issued Date : 2003.04.01 Revised Date : Page No. : 1/4 Low Vcesat NPN Epitaxial Planar Transistor BTD965A3 Features • Low VCE(sat), Low VCE(sat)=0.35 V (typical), at IC / IB = 3A / 0.1A • Excellent DC current gain characteristics • Complementary to BTB1386A3 Equivalent Circuit TO-92 BTD965A3 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage VCBO VCEO VEBO IC IC(cp) Pd Tj Tstg Collector Current Power Dissipation Junction Temperature Storage Temperature Limits Unit 40 20 7 5 8 *1 0.75 150 -55~+150 V V V A(DC) A(Pulse) W °C °C Note : *1. Single Pulse Pw≦380us,Duty≦2%. BTD965A3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C847A3 Issued Date : 2003.04.01 Revised Date : Page No. : 2/4 Characteristics (Ta=25°C) Symbol BVCEO BVEBO ICBO ICEO IEBO *VCE(sat) *hFE1 *hFE2 fT Cob Min. 20 7 230 150 - Typ. 0.35 150 Max. 0.1 1 0.1 1.0 800 50 Unit V V uA uA uA V MHz pF Test Conditions IC=1mA, IB=0 IE=10uA, IC=0 VCB=10V. IE=0 VCB=10V. IE=0 VEB=7V,IC=0 IC=3A, IB=0.1A VCE=2V, IC=500mA VCE=2V, IC=2.00A VCE=6V, IE=50mA, f=200MHz VCB=20V, IE=0A, f=1MHz *Pulse Test : Pulse Width ≤380us, Duty Cycle≤2% Classification Of hFE1 Rank Range BTD965A3 Q 230~380 R 340~600 S 400~800 CYStek Product Specification Spec. No. : C847A3 Issued Date : 2003.04.01 Revised Date : Page No. : 3/4 CYStech Electronics Corp. Characteristic Curves Saturation Voltage vs Collector Current Current Gain vs Collector Current 1000 1000 Current Gain---HFE Saturation Voltage-(mV) VCE(SAT)@IC=30IB 100 HFE@VCE=2V 10 100 1 10 100 1000 1 10000 10 100 1000 10000 Collector Current---IC(mA) Collector Current---IC(mA) Cutoff Frequency vs Collector Current Power Derating Curve 1000 800 Power Dissipation---PD(mW) CutoffF Frequency---FT(MHZ) FT@VCE=6V 100 600 500 400 300 200 100 0 1 10 Collector Current---IC(mA) BTD965A3 700 100 0 50 100 150 200 Ambient Temperature---TA(℃) CYStek Product Specification Spec. No. : C847A3 Issued Date : 2003.04.01 Revised Date : Page No. : 4/4 CYStech Electronics Corp. TO-92 Dimension Marking: α2 A B 1 2 3 965 α3 C D H I G α1 Style: Pin 1.Emitter 2.Collector 3.Base E 3-Lead TO-92 Plastic Package CYStek Package Code: A3 F *: Typical Inches Min. Max. 0.1704 0.1902 0.1704 0.1902 0.5000 0.0142 0.0220 *0.0500 0.1323 0.1480 DIM A B C D E F Millimeters Min. Max. 4.33 4.83 4.33 4.83 12.70 0.36 0.56 *1.27 3.36 3.76 DIM G H I α1 α2 α3 Inches Min. Max. 0.0142 0.0220 *0.1000 *0.0500 *5° *2° *2° Millimeters Min. Max. 0.36 0.56 *2.54 *1.27 *5° *2° *2° Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: 42 Alloy ; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTD965A3 CYStek Product Specification