CYSTEKEC BTD2150AM3

Spec. No. : C848M3-A
Issued Date : 2002.08.18
Revised Date : 2005.10.04
Page No. : 1/5
CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
BTD2150AM3
Features
• Low VCE(sat), VCE(sat)=0.1 V (typical), at IC / IB = 1A / 50mA
• Excellent current gain characteristics
• Complementary to BTB1424AM3
• Pb-free package
Symbol
Outline
BTD2150AM3
SOT-89
B:Base
C:Collector
E:Emitter
B C E
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
Symbol
Limits
Unit
VCBO
VCEO
VEBO
IC
80
50
6
3
0.6
1
2
150
-55~+150
V
V
V
A
Pd
Tj
Tstg
*1
*2
W
°C
°C
Note : *1 Printed circuit board, 1.7mm thick, collector copper plating 10mm*10mm.
*2 When mounted on a 40*40*0.7mm ceramic board.
BTD2150AM3
CYStek Product Specification
Spec. No. : C848M3-A
Issued Date : 2002.08.18
Revised Date : 2005.10.04
Page No. : 2/5
CYStech Electronics Corp.
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VCE(sat)
*VBE(sat)
*hFE1
*hFE2
*hFE3
fT
Cob
Min.
80
50
6
120
120
100
-
Typ.
0.1
0.25
90
45
Max.
0.1
0.1
0.25
0.5
2
820
-
Unit
V
V
V
µA
µA
V
V
V
MHz
pF
Test Conditions
IC=50µA, IE=0
IC=1mA, IB=0
IE=50µA, IC=0
VCB=60V, IE=0
VEB=5V, IC=0
IC=1A, IB=50mA
IC=2A, IB=0.2A
IC=2A, IB=0.2A
VCE=2V, IC=0.1A
VCE=2V, IC=0.5A
VCE=2V, IC=1A
VCE=5V, IC=0.1A, f =100MHz
VCB=10V, f=1MHz
*Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2%
Classification Of hFE 2
Rank
Q
Range
120~270
R
180~390
S
T
270~560
390~820
Ordering Information
Device
Package
SOT-89
(Pb-free)
BTD2210AM3
Shipping
Marking
1000 pcs / Tape & Reel
CF
Characteristic Curves
Grounded Emitter Output Characteristics
Grounded Emitter Output Characteristics
700
500uA
120
Collector Current---IC(mA)
Collector Current---IC(mA)
140
400uA
100
80
300uA
60
200uA
40
100uA
20
IB=0uA
0
0
1
2
3
4
5
Collector To Emitter Voltage---VCE(V)
BTD2150AM3
2.5mA
600
500
2mA
400
1.5mA
300
1mA
200
500uA
100
IB=0uA
0
6
0
1
2
3
4
5
6
Collector To Emitter Voltage---VCE(V)
CYStek Product Specification
Spec. No. : C848M3-A
Issued Date : 2002.08.18
Revised Date : 2005.10.04
Page No. : 3/5
CYStech Electronics Corp.
Characteristic Curves(Cont.)
Grounded Emitter Output Characteristics
Grounded Emitter Output Characteristics
3500
Collector Current---IC(mA)
Collector Current---IC(mA)
2500
10mA
2000
8mA
1500
6mA
1000
4mA
500
2mA
25mA
3000
20mA
2500
15mA
2000
10mA
1500
5mA
1000
500
IB=0mA
IB=0mA
0
0
0
1
2
3
4
5
Collector To Emitter Voltage---VCE(V)
0
6
1
2
3
4
5
6
Collector To Emitter Voltage---VCE(V)
Current gain vs Collector current
Saturation voltage vs Collector current
1000
1000
Saturation voltage---(mV)
Current gain---HFE
VCE(sat)
VCE=5V
100
VCE=2V
VCE=1V
10
100
IC=40IB
10
IC=10IB
1
1
10
100
1000
10000
1
Collector current---IC(mA)
10
100
1000
10000
Collector current---IC(mA)
Saturation votlage vs Collector current
Power Derating Curves
10000
2.5
Power Dissipation---PD(W)
Saturation voltage---(mV)
IC=20IB
VBE(sat)@IC=10IB
1000
100
2
See Note 2 on Page 1
1.5
See Note 1 on Page 1
1
0.5
0
1
10
100
1000
Collector current---IC(mA)
BTD2150AM3
10000
0
50
100
150
200
Ambient Temperature---TA(℃)
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C848M3-A
Issued Date : 2002.08.18
Revised Date : 2005.10.04
Page No. : 4/5
Reel Dimension
Carrier Tape Dimension
BTD2150AM3
CYStek Product Specification
Spec. No. : C848M3-A
Issued Date : 2002.08.18
Revised Date : 2005.10.04
Page No. : 5/5
CYStech Electronics Corp.
SOT-89 Dimension
A
2
1
Marking:
3
H
C
CF*
D
B
E
Style: Pin 1. Base 2. Collector 3. Emitter
I
F
G
3-Lead SOT-89 Plastic
Surface Mounted Package
CYStek Package Code: M3
*: Typical
Inches
Min.
Max.
0.1732 0.1811
0.1594 0.1673
0.0591 0.0663
0.0945 0.1024
0.01417 0.0201
DIM
A
B
C
D
E
Millimeters
Min.
Max.
4.40
4.60
4.05
4.25
1.50
1.70
2.40
2.60
0.36
0.51
DIM
F
G
H
I
Inches
Min.
Max.
0.0583 0.0598
0.1165 0.1197
0.0551 0.0630
0.0138 0.0161
Millimeters
Min.
Max.
1.48
1.527
2.96
3.04
1.40
1.60
0.35
0.41
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: 42 Alloy ; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTD2150AM3
CYStek Product Specification