CYSTEKEC DTA144TS3

CYStech Electronics Corp.
Spec. No. : C274S3
Issued Date : 2002.06.01
Revised Date : 2002. 11.02
Page No. : 1/3
General Purpose PNP Digital Transistors (Built-in Resistors)
DTA144TS3
Features
• Built-in bias resistors enable the configuration of an inverter circuit without connecting external input
resistors (see equivalent circuit).
• The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the
input. They also have the advantage of almost completely eliminating parasitic effects.
• Only the on/off conditions need to be set for operation, making device design easy.
• Complements the DTC144TS3
Equivalent Circuit
DTA144TS3
SOT-323
R1=47 kΩ
B:Base
C:Collector
E:Emitter
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
VCBO
VCEO
VEBO
IC
Pd
Tj
Tstg
-50
-50
-5
-100
200
150
-55~+150
V
V
V
mA
mW
°C
°C
DTA144TS3
CYStek Product Specification
Spec. No. : C274S3
Issued Date : 2002.06.01
Revised Date : 2002. 11.02
Page No. : 2/3
CYStech Electronics Corp.
Electrical Characteristics (Ta=25°C)
Parameter
Collector-Base Breakdown
Voltage
Collector-Emitter Breakdown
Voltage
Emitter-Base Breakdown
Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
Collector-Emitter Saturation
Voltage
DC Current Gain
Input Resistance
Transition Frequency
Symbol
Min. Typ. Max. Unit
Test Conditions
VCBO
-50
-
-
V
IC=-50uA
VCEO
-50
-
-
V
IC=-1mA
VEBO
-5
-
-
V
IE=-50uA
ICBO
IEBO
-
-
-0.5
-0.5
uA
uA
VCB=-50V
VEB=-4V
VCE(sat)
-
-0.1
-0.3
V
IC=-5mA, IB=-0.5mA
hFE
R
fT
100
32.9
-
47
250
600
VCE=-5V, IC=-1mA
61.1 kΩ MHz VCE=-10V, IE=-5mA, f=100MHz*
* Transition frequency of the device
Characteristic Curves
Saturation Voltage vs Collector Current
Current Gain vs Collector Current
1000
Saturation Voltage---(mV)
Current Gain---HFE
1000
100
HFE@VCE=5V
100
VCE(SAT)@IC=10IB
10
10
0.1
1
10
1
100
10
100
Collector Current ---IC(mA)
Collector Current--- IC(mA)
PD - Ta
Power Dissipation---PD(mW)
250
200
150
100
50
0
0
50
100
150
200
Ambient Temperature --- Ta(℃ )
DTA144TS3
CYStek Product Specification
Spec. No. : C274S3
Issued Date : 2002.06.01
Revised Date : 2002. 11.02
Page No. : 3/3
CYStech Electronics Corp.
SOT-323 Dimension
3
Marking:
A
Q
A1
1
C
TE
6T
Lp
2
detail Z
bp
e1
W
B
e
E
D
A
Z
3-Lead SOT-323 Pastic
Surface Mounted Package
CYStek Package Code: S3
θ
He
0
1
v
A
Style: Pin 1.Base 2.Emitter 3.Collector
2 mm
scale
*: Typical
Inches
Min.
Max.
0.0315 0.0433
0.0000 0.0039
0.0118 0.0157
0.0039 0.0098
0.0709 0.0866
0.0453 0.0531
0.0512
-
DIM
A
A1
bp
C
D
E
e
Millimeters
Min.
Max.
0.80
1.10
0.00
0.10
0.30
0.40
0.10
0.25
1.80
2.20
1.15
1.35
1.3
-
Inches
DIM
Min.
Max.
e1
0.0256
He
0.0787 0.0886
Lp
0.0059 0.0177
Q
0.0051 0.0091
v
0.0079
w
0.0079
θ
Millimeters
Min.
Max.
0.65
2.00
2.25
0.15
0.45
0.13
0.23
0.2
0.2
10°
0°
Notes: 1.Dimension and tolerance based on our Spec. dated Feb. 27.002.
2.Controlling dimension: millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: 42 Alloy ; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
DTA144TS3
CYStek Product Specification