Spec. No. : C269N3 Issued Date : 2003.04.29 Revised Date : Page No. : 1/4 CYStech Electronics Corp. PNP Digital Transistors (Built-in Resistor) DTA143TN3 Features • Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). • The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. • Only the on/off conditions need to be set for operation, making device design easy. • Complements the DTC143TN3 Equivalent Circuit Outline SOT-23 DTA143TN3 R1=4.7 kΩ B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature DTA143TN3 Symbol Limits Unit VCBO VCEO VEBO IC Pd -50 -50 -5 -100 200 625 150 -55~+150 V V V mA mW RθJA Tj Tstg °C/W °C °C CYStek Product Specification CYStech Electronics Corp. Spec. No. : C269N3 Issued Date : 2003.04.29 Revised Date : Page No. : 2/4 Electrical Characteristics (Ta=25°C) Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Base Cutoff Current Emitter-Base Cutoff Current Collector-Emitter Saturation Voltage DC Current Gain Input Resistance Transition Frequency Symbol BVCBO Min. Typ. Max. Unit Test Conditions -50 V IC=-50µA BVCEO -50 - - V IC=-1mA BVEBO ICBO IEBO -5 - - -0.5 -0.5 V µA µA IE=-50µA VCB=-50V VEB=-4V VCE(sat) - 0.1 -0.3 V IC=-5mA, IB=-0.25mA hFE R fT 100 3.29 - 4.7 250 600 VCE=-5V, IC=-1mA 6.11 kΩ MHz VCE=-10V, IC=-5mA, f=100MHz * * Transition frequency of the device DTA143TN3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C269N3 Issued Date : 2003.04.29 Revised Date : Page No. : 3/4 Characteristic Curves Saturation Voltage vs Collector Current Current Gain vs Collector Current 1000 1000 VCE=5V Current Gain---HFE Saturation Voltage---(mV) VCE(SAT)@IC=20IB 100 10 100 0.1 1 10 Collector Current---IC(mA) 100 0.1 1 10 100 Collector Current---IC(mA) Power Derating Curve Power Dissipation---PD(mW) 250 200 150 100 50 0 0 50 100 150 200 Ambient Temperature---TA(℃) DTA143TN3 CYStek Product Specification Spec. No. : C269N3 Issued Date : 2003.04.29 Revised Date : Page No. : 4/4 CYStech Electronics Corp. SOT-23 Dimension Marking: A L 3 B 6F S 2 1 G V 3-Lead SOT-23 Plastic Surface Mounted Package CYStek Package Code: N3 C D K H Style : Pin 1.Base 2.Emitter 3.Collector J *:Typical Inches Min. Max. 0.1102 0.1204 0.0472 0.0630 0.0335 0.0512 0.0118 0.0197 0.0669 0.0910 0.0005 0.0040 DIM A B C D G H Millimeters Min. Max. 2.80 3.04 1.20 1.60 0.89 1.30 0.30 0.50 1.70 2.30 0.013 0.10 DIM J K L S V Inches Min. Max. 0.0034 0.0070 0.0128 0.0266 0.0335 0.0453 0.0830 0.1083 0.0098 0.0256 Millimeters Min. Max. 0.085 0.177 0.32 0.67 0.85 1.15 2.10 2.75 0.25 0.65 Notes : 1.Controlling dimension : millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material : • Lead : 42 Alloy ; solder plating • Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYSrek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. DTA143TN3 CYStek Product Specification