Surface Mount Schottky Barrier Diode MMBD101 Features Low Turn-on Voltage ForUHFmixerapplication Also suitablefor use in detector and ultra-fast switching circuitsLow NoiseFigure- [email protected] Very Low Capacitance-LessThan1.0pF@0V HighForwardConductance-0.5V(Typ) @ IF= 10mA A 1 3 To p View V Mechanical Data Case: SOT-23, Molded Plastic Terminals: Solderable per MIL-STD-202, Method 208 Polarity: See Diagrams Below Weight: 0.008 grams (approx.) Mounting Position: Any L B S 2 G C H D 3 1 3 CATHODE 2 J K 1 ANODE SOT-23 Dim Min Max A 2.800 3.040 B 1.200 1.400 C 0.890 1.110 D 0.370 0.500 G 1.780 2.040 H 0.013 0.100 J 0.085 0.177 K 0.450 0.600 L 0.890 1.020 S 2.100 2.500 V 0.450 0.600 All Dimension in mm MAXIMUM RATINGS MMBD101 Rating Reverse Voltage Symbol Value Unit VR 7.0 Volts 225 mW 1.8 mW/ C Forward Power Dissipation @ TA = 25oC Derate above 25oC PF Junction Temperature TJ Storage Temperature Range Tstg o +150 o -55 to +150 C C o DEVICE MARKING MMBD101 = 4M ELECTRICAL CHARACTERISTICS (TA = 25oCunless otherwise noted) Characteristic Reverse Breakdown Voltage (IR = 10 Ad c) Diode Capacitance (VR = 0, f = 1.0 MHz ) Symbol Min Typ V(BR)R 7.0 10 Max Unit Volts CT 0.88 1.0 pF Forward Voltage (IF = 10 mAdc) VF 0.5 0.6 Volts Reverse Leakage (VR = 3.0 Vdc) IR 0.02 0.25 Adc RATINGS AND CHARACTERISTIC CURVES MMBD101 Figure 2. Forward Voltage Figure 1. Reverse Leakage 100 0.5 V R = 3.0 Vdc I F , Forwa rd C urren t (mA) I R , R verse Lea kage ( A) 1.0 0.7 0.2 0.1 0.07 0.05 T A = 85 oC 10 o T A = C0 1.0 T A = 25 oC 0.02 0.01 30 40 50 60 70 80 90 100 T A , Amb ien t Tem per ature ( OC) 110 120 0.1 130 0.3 0.4 0.7 Figure 4. Noise Figure Figure 3. Capacitance 1.0 11 10 Local Oscillator Frequency = 1.0 GHz 9.0 N F, N oise Figure (dB) 0.9 C, C apacitance (pF) 0.5 0.6 V F, Forward Voltage (V ) 0.8 0.7 8.0 7.0 6.0 5.0 4.0 3.0 2.0 0.6 0 1.0 2.0 V R , R everse Voltage (V ) 3.0 4.0 1.0 0.1 0.2 0.5 1.0 2.0 PLO, Local Oscillator Power (mW) 5.0 10