TYSEMI MMBD101

Product specification
MMBD101
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
1
Low Noise Figure-6.0dB [email protected]
0.55
Features
+0.1
1.3-0.1
+0.1
2.4-0.1
0.4
3
2
+0.1
0.95-0.1
+0.1
1.9-0.1
Very Low Capacitance-Less Than [email protected] Volts
+0.05
0.1-0.01
0-0.1
+0.1
0.38-0.1
+0.1
0.97-0.1
High Forward Conductance-0.5volts(typ)@IF=10mA
1.Base
2.Emitter
3.collector
A bsolute M axim um R atings T a = 25
P aram eter
S ym bol
V alue
U nit
VR
7.0
V
pF
280
mW
2.2
mW/
Tj
150
T stg
-55 to +150
R everse voltage
F orward P ower D issipation
@ T A = 25
D erate above 25
Junction tem perature
S torage tem perature range
Electrical Characteristics Ta = 25
Parameter
Reverse Breakdown Voltage
Symbol
V (BR)R
Conditions
Min
IR = 10
7.0
A
Typ
Max
Unit
10
V
Diode Capacitance
CT
V R = 0,f =1.0MHz,Note1
0.88
1.0
pF
Forward Voltage
VF
IF = 10 mA
0.5
0.6
V
Reverse Leakage
IR
V R = 3.0 V
0.02
0.25
A
Marking
Marking
4M
http://www.twtysemi.com
[email protected]
4008-318-123
1 of 1