DIOTEC ELECTRONICS CORP. Data Sheet No. GPDG-101-1B 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: (310) 767-1052 Fax: (310) 767-7958 1 AMP HIGH RELIABILITY SILICON DIODES MECHANICAL SPECIFICATION FEATURES SERIES GP100 - GP110 ACTUAL SIZE OF DO-41 PACKAGE R PROPRIETARY SOFT GLASS JUNCTION PASSIVATION FOR SUPERIOR RELIABILITY AND PERFORMANCE DO - 41 VOID FREE VACUUM DIE SOLDERING FOR MAXIMUM MECHANICAL STRENGTH AND HEAT DISSIPATION (Solder Voids: Typical < 2%, Max. < 10% of Die Area) LL BD (Dia) EXTREMELY LOW LEAKAGE AT HIGH TEMPERATURES LOW FORWARD VOLTAGE DROP BL Color Band Denotes Cathode 1A at TA = 75 C WITH NO THERMAL RUNAWAY MECHANICAL DATA LL Case: JEDEC DO-41, molded epoxy (U/L Flammability Rating 94V-0) Terminals: Plated axial leads LD (Dia) Soldering: Per MIL-STD 202 Method 208 guaranteed ANT Polarity: Color band denotes cathode S RoH Mounting Position: Any LI MP O C Minimum In mm Sym 0.160 BL Weight: 0.012 Ounces (0.34 Grams) 4.1 Maximum In mm 5.2 0.205 BD 0.103 2.6 0.107 2.7 LL LD 1.00 0.028 25.4 0.71 0.034 0.86 MAXIMUM RATINGS & ELECTRICAL CHARACTERISTICS ! "# $ % & ' % ( )*,+ % ' !! ' $ -! ' $ % ! .$ ) /0 PARAMETER (TEST CONDITIONS) RATINGS SYMBOL ÃÄ0Å#Æ:Æ Series Number V MKN Maximum DC Blocking Voltage Maximum RMS Voltage V G$HI Maximum Peak Recurrent Reverse Voltage V JKJ$L 1 2 Average Forward Rectified Current @ T = 75 C, Lead length = 0.375 in. (9.5 mm) Peak Forward Surge Current ( 8.3 mSec single half sine wave superimposed on rated load) ÇÉÈ0ÊË$ÊÍÌÉÎ0ÏÐ&ÑÓÒÉÔ0ÕÖ:×ÙØÚÛÜ&ÝßÞàáâ:ãåäæç#çè é:ê ïð:ð V&W:W X&Y:Y õ:ö&ö b:c:c üý:ý:ý ë:ì ñ:ò Z[&\ ]:^:_ ÷&ø&ù d:e:f þ:ÿ&ÿ í:î óô:ô `&a:a i&j:j ú:û&û g:h:h l:m n V P#Q Maximum Forward Voltage at 1 Amp DC Á  Maximum Full Cycle Reverse Current @ T = 75 C (Note 1) Maximum Average DC Reverse Current At Rated DC Blocking Voltage ½ Typical Thermal Resistance, Junction to Ambient (Note 1) Typical Junction Capacitance (Note 2) Operating and Storage Temperature Range · ¸0¹&ºE»$¼ ! ,! # ¡!¢,£¤ # ! ¥ £¦¦ §¨,!©ªE« , ,¨¬ ®0¯°±E±# ¤ ,« !²,« ©,²³E !E´³µE¶²³: © ¾ @ T = 25 C ¿ À @ T = 125 C I 5$67 8:9; I 3$4 R<=!> CU ?,@BA&CED T T VOLTS k IF I RST UNITS AMPS VOLTS o p q r s:tu t v:w xy z {:|~} K&| O A °C/W pF °C H5 DIOTEC ELECTRONICS CORP. Data Sheet No. GPDG-101-2B 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: (310) 767-1052 Fax: (310) 767-7958 1 AMP HIGH RELIABILITY SILICON DIODES RATING & CHARACTERISTIC CURVES FOR SERIES GP100 - GP110 1.0 Peak Forward Surge Current (Amperes) Average Forward Current, Io (Amperes) 1.2 0.8 0.6 0.4 0.2 0 0 50 100 150 jQkOlmkQnporqs t:u:v wx yIzI{}|~ {O :qr ~q 180 Ambient Temperature, C FIGURE 1. FORWARD CURRENT DERATING CURVE Number of Cycles at 60 Hz FIGURE 2. MAXIMUM NON-REPETITIVE SURGE CURRENT 10 Instantaneous Reverse Current, I (Microamperes) Instantaneous Forward Current (Amperes) 1.0 0.1 G £ IL¤ : } `I? ¥ ¡I¡¢ »½ à ¼¿¾ÀÀÂÄ Á 1.0 .1 0.1 .01 0.01 0.6 0.7 08 0.9 1.0 1.1 1.2 ´G ¹ µI¶·Lº ¸ ®¯ 0 1.3 °?± 40 ²³ ¦§?§ ¨©ª «¬ Percent of Rated Peak Reverse Voltage Instantaneous Forward Voltage (Volts) FIGURE 4. TYPICAL REVERSE CHARACTERISTICS FIGURE 3. TYPICAL FORWARD CHARACTERISTIC PER DIODE CD?DD Capacitance, pF TJ = 25 oC #$ -. / &' ( % +, )** Reverse Voltage, (Volts) FIGURE 5. TYPICAL JUNCTION CAPACITANCE PER DIODE H6 Peak Forward Surge Current (Amperes) 011 233 EG g FIHJLh K MONQPQR S TUT?V W V W XTZY\[]^S T`_]Qa bT cQW d cVFHe?ef i Y AB 78 7:9 45 6 =?> @ ;< Pulse Duration (Milliseconds) FIGURE 6. PEAK FORWARD SURGE CURRENT ! " !